TRENCHSTOP™ Series IKP15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Pb-free lead plating; RoHS compliant Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKP15N60T G E PG-TO220-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175C K15T60 PG-TO220-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 26 Unit V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire 23 TC = 100C Pulsed collector current, tp limited by Tjmax ICpuls 45 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 45 IF 26 A Diode forward current, limited by Tjmax TC = 25C, value limited by bondwire 23 TC = 100C Diode pulsed current, tp limited by Tjmax IFpuls 45 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 130 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Short circuit withstand time 2) VGE = 15V, VCC 400V, Tj 150C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.15 K/W RthJCD 1.9 RthJA 62 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - T j =2 5 C - 1.65 2.05 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 150C Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 34 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 0.24 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 10.4 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 718 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 140 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 1.0 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 14.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 495 - A/s IFAG IPC TD VLS 3 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q t p =2µs 10µs T C =80°C 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A T C =110°C 20A Ic 10A 10A 50µs 1A 1ms 10ms DC Ic 0A 10Hz 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 15) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 120W 25A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10V 100W 80W 60W 40W 20A 15A 10A 5A 20W __ Icmax --- max. current limited by bondwire 0W 25°C 0A 50°C 75°C 100°C 125°C 150°C 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) 4 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q 40A 40A 30A 35A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A V G E =20V 30A 15V 13V 25A 11V 20A 9V 15A 7V 10A 5A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 30A 25A 20A 15A 10A T J =175°C 25°C 0A 2V 4V 6V 8V 2.5V IC =30A 2.0V 1.5V I C =15A 1.0V IC =7.5A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 3V Figure 6. Typical output characteristic (Tj = 175°C) 35A 0V 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 5A 1V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 10ns 0A 5A 10A 15A 20A 25A IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG=15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series *) E on and E ts include losses 1.6m J *) E on and E ts include losses 1.6 m J due to diode recovery due to diode recovery E ts * 1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES IKP15N60T q E ts * 1.4 m J 1.2 m J 1.0 m J 0.8 m J 0.6 m J E off 0.4 m J E on * 0.0m J 0A 5A 10A 15A 20A 25A 0.2 m J IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9m J 1.2m J *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0.7m J 0.6m J E ts * 0.5m J 0.4m J E off 0.3m J E on * 0.2m J 25°C due to diode recovery 1.0m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0.8m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * 0.0m J 300V 50°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V 75°C 100°C 125°C 150°C VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q 1nF 15V 120V 480V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 10V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 60nC 80nC 100nC 10pF QGE, GATE CHARGE 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=15 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q 0 D=0.5 0.2 R,(K/W) 0.13265 0.37007 0.30032 0.34701 0.1 -1 10 K/W , (s) 5.67*10-2 1.558*10-2 2.147*10-3 2.724*10-4 R1 R2 0.05 0.02 C 1 = 1 /R 1 C 2 = 2 /R 2 0.01 single pulse ZthJC, TRANSIENT THERMAL IMPEDANCE ZthJC, TRANSIENT THERMAL IMPEDANCE 10 K/W -2 D=0.5 0.2 0.1 -1 10 K/W R,(K/W) 0.06991 0.43036 0.53839 0.05 0.58718 0.23695 0.03700 0.02 , (s) 1.11*10-1 2.552*10-2 3.914*10-3 4.92*10-4 7.19*10-5 7.4*10-6 R1 6.53*10-2 R2 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse -2 10 K/W 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) 1µs 120ns T J =25°C 40ns 10ms 100ms 0.8µC 0.6µC T J =25°C 0.4µC 0.2µC 0.0µC 600A/µs 400A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E) IFAG IPC TD VLS Qrr, REVERSE RECOVERY CHARGE 160ns 80ns 1ms T J =175°C 1.0µC T J =175°C 0ns 400A/µs 10µs 100µs tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 200ns trr, REVERSE RECOVERY TIME 0 10 K/W 9 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E) Rev. 2.5 11.05.2015 TRENCHSTOP™ Series 16A IKP15N60T q T J =175°C 12A 10A T J =25°C 8A 6A 4A 2A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT -700A/µs 14A 600A/µs -500A/µs T J =25°C -400A/µs -300A/µs -200A/µs -100A/µs 0A/µs 400A/µs 0A 400A/µs T J =175°C -600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E) 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E) VF, FORWARD VOLTAGE IF, FORWARD CURRENT 40A 30A 20A T J =25°C 175°C 10A 2.0V I F =30A 1.5V 15A 7.5A 1.0V 0.5V 0.0V 0°C 0A 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 10 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q PG-TO220-3 IFAG IPC TD VLS 11 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 12 Rev. 2.5 11.05.2015 TRENCHSTOP™ Series IKP15N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 13 Rev. 2.5 11.05.2015