LL101A - LL101C SCHOTTKY BARRIER DIODES MiniMELF (SOD-80C) FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the DO-35 case with type designation SD101A, B, C • Pb / RoHS Free φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.079 (2.00)Min. 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol LL101A LL101B LL101C Value Maximum Single Cycle Surge 10µs Square Wave IFSM 60 50 40 2 Power Dissipation (Infinite Heatsink) PD 400(1) Repetitive Peak Reverse Voltage Thermal Resistance Junction to Ambient Air VRRM RθJA Junction Temperature TJ Storage temperature range TS Unit V A mW 300 (1) °C/W 125 (1) °C °C -55 to + 150 (1) Note: (1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Drop Reverse Recovery Time Page 1 of 2 Symbol LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C Test Condition V(BR)R IR = 10 µA IR VR = 50 V VR = 40 V VR = 30 V IF = 1mA VF IF = 15mA Trr IF = IR = 5mA , recover to 0.1IR Min 60 50 40 - Typ - Max 10 10 10 0.41 0.40 0.39 1.00 0.95 0.90 Unit - - 1.0 ns V µA V Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( LL101A - LL101C ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 10 100 LL101C LL101A LL101A 5 Forward Current , IF (mA) Forward Current , IF (mA) LL101B LL101B 2 1 0.5 0.2 0.1 0.05 80 LL101C 60 40 20 0.02 0.01 0 0 0.5 1 0 Forward Voltage , VF (V) 0.5 1 Forward Voltage , VF (V) Typical capacitance curve as a function of reverse Voltage Typical variation of reverse current at various temperatures 100 2 Ta = 125°C 50 Tj = 25°C LL101B Reverse Current , IR (µA) Diode Capacitance , Cd (pF) 20 LL101C 1 LL101A 0.41 10 5 2 1 0.5 0.2 Ta = 25°C 0.1 0.05 0.02 0.01 0 0 10 20 30 40 Reverse Voltage , VR (V) Page 2 of 2 50 0 10 20 30 40 50 Reverse Voltage , VR (V) Rev. 02 : March 24, 2005