EIC LL101B Schottky barrier diode Datasheet

LL101A - LL101C
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
FEATURES :
Cathode Mark
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• This diode is also available in the DO-35 case with
type designation SD101A, B, C
• Pb / RoHS Free
φ 0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
LL101A
LL101B
LL101C
Value
Maximum Single Cycle Surge 10µs Square Wave
IFSM
60
50
40
2
Power Dissipation (Infinite Heatsink)
PD
400(1)
Repetitive Peak Reverse Voltage
Thermal Resistance Junction to Ambient Air
VRRM
RθJA
Junction Temperature
TJ
Storage temperature range
TS
Unit
V
A
mW
300
(1)
°C/W
125
(1)
°C
°C
-55 to + 150 (1)
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Reverse Recovery Time
Page 1 of 2
Symbol
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
Test Condition
V(BR)R
IR = 10 µA
IR
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1mA
VF
IF = 15mA
Trr
IF = IR = 5mA ,
recover to 0.1IR
Min
60
50
40
-
Typ
-
Max
10
10
10
0.41
0.40
0.39
1.00
0.95
0.90
Unit
-
-
1.0
ns
V
µA
V
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( LL101A - LL101C )
Typical variation of forward current
and forward voltage for primary conduction
through the schottky barrier
Typical forward conduction curve
of combination Schottky barrier
and PN junction guard ring
10
100
LL101C
LL101A
LL101A
5
Forward Current , IF (mA)
Forward Current , IF (mA)
LL101B
LL101B
2
1
0.5
0.2
0.1
0.05
80
LL101C
60
40
20
0.02
0.01
0
0
0.5
1
0
Forward Voltage , VF (V)
0.5
1
Forward Voltage , VF (V)
Typical capacitance curve as a
function of reverse Voltage
Typical variation of reverse current
at various temperatures
100
2
Ta = 125°C
50
Tj = 25°C
LL101B
Reverse Current , IR (µA)
Diode Capacitance , Cd (pF)
20
LL101C
1
LL101A
0.41
10
5
2
1
0.5
0.2
Ta = 25°C
0.1
0.05
0.02
0.01
0
0
10
20
30
40
Reverse Voltage , VR (V)
Page 2 of 2
50
0
10
20
30
40
50
Reverse Voltage , VR (V)
Rev. 02 : March 24, 2005
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