Freescale MHPA19010N Pcs band rf linear ldmos amplifier Datasheet

Freescale Semiconductor
Technical Data
Document Number: MHPA19010N
Rev. 6, 5/2006
PCS Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA.
• Typical CDMA Performance: 1960 MHz, 28 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
• Adjacent Channel Power: - 51 dBc @ 30 dBm, 885 kHz Channel Spacing
• Power Gain: 24.5 dB Min (@ f = 1960 MHz)
• 0.2 dB Typical Gain Flatness
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead - Free Terminations
MHPA19010N
1930- 1990 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power (Single Carrier CW)
Pin
+20
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Quiescent Bias Current
IDQ
750
mA
Rating
Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System)
Characteristic
Supply Current
Symbol
Min
Typ
Max
Unit
IDD
—
600
—
mA
Power Gain
(f = 1960 MHz)
Gp
24.5
25
—
dB
Gain Flatness
(f = 1930 - 1990 MHz)
GF
—
0.2
0.5
dB
Power Output @ 1 dB Comp.
(f = 1960 MHz)
P1dB
—
41.5
—
dBm
Input VSWR
(f = 1930 - 1990 MHz)
VSWRin
—
1.5:1
2:1
Noise Figure
(f = 1960 MHz)
NF
—
8
10
dB
ACPR
—
- 58
- 51
dBc
Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW,
885 kHz Channel Spacing
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHPA19010N
1
TYPICAL CHARACTERISTICS
5
27
Gps
0
26
ORL
−5
25
VDD = 28 Vdc
Pout = 5 W
IDQ = 600 mA
100 kHz Tone Spacing
−10
−15
28
IRL
24
23
−20
22
20
2−Carrier CDMA
Carrier Spacing = 2.5 MHz
Carrier Bandwidth = 1.2288 MHz
Gps
27
TC = 25_C
26
25
16
−10_C
14
85_C
24
23
−10_C
10
22
8
25_C
−25
21
21
6
85_C
1940
1950
1960
1970
1980
20
1990
20
1920
1930
1940
1950
−30
85_C
−40
ACPR
−50 −10_C
25_C
2−Carrier CDMA, Carrier Spacing = 2.5 MHz
Carrier Bandwidth = 1.2288 MHz
IM3
−50
85_C
−55
−60
ACPR @ 885 kHz, Bandwidth = 30 kHz
IM3 @ 2.5 MHz, Bandwidth = 1.2288 MHz
1930
1940
1950
1960
1970
1980
1990
−70
2000
4
2000
1990
−25
VDD = 28 Vdc, IDQ = 600 mA
100 kHz: f1 = 1959.95 MHz
f2 = 1960.05 MHz
10 MHz: f1 = 1955 MHz
f2 = 1965 MHz
−30
−35
−40
−45
100 kHz
−50
10 MHz
−55
−60
20
15
25
30
35
40
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (dBm) PEP
Figure 3. 2 - Carrier CDMA IM3 and ACPR
versus Frequency
Figure 4. Two - Tone CDMA IMD versus Output
Power
−25
−30
IDQ = 800 mA
−35
500 mA
−40
700 mA
−45
−50
VDD = 28 Vdc
f1 = 1959.95 MHz
f2 = 1960.05 MHz
600 mA
−55
−60
15
20
25
30
35
40
Pout, OUTPUT POWER (dBm) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
η, DRAIN EFFICIENCY (%), P out OUTPUT POWER (dBm)
−60
1920
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, POUT = 1 W (Avg.), IDQ = 600 mA
25_C
−45
1980
Figure 2. 2 - Carrier CDMA Power Gain and Efficiency
versus Frequency
−20
−40
1970
f, FREQUENCY (MHz)
−35
TC = −10_C
1960
48
27.5
42
27
Gps
36
26.5
30
26
Pout
24
25.5
18
25
12
24.5
6
VDD = 28 Vdc
IDQ = 600 mA
f = 1960 MHz
η
0
−5
0
5
10
15
G ps , POWER GAIN (dB)
−30
1930
Figure 1. Two - Tone Power Gain, Input Return
Loss and Output Return Loss versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
12
VDD = 28 Vdc
Pout = 1 W (Avg.)
IDQ = 600 mA
η
f, FREQUENCY (MHz)
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
18
η, DRAIN EFFICIENCY (%)
28
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB)
10
24
23.5
20
25
PIN, (dBm)
Figure 6. CW Output Power, Efficiency and Gain
versus Input Power
MHPA19010N
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−30
10
VDD = 28 Vdc
IDQ = 600 mA
f1 = 1960 MHz
f2 = 1962.5 MHz
IM3 (dBc), ACPR (dBc)
−40
−45
9
8
7
−50
6
−55
5
IM3
−60
4
−65
3
−70
2
ACPR
−75
1
η
−80
5
10
η, DRAIN EFFICIENCY (%)
−35
15
20
25
30
0
35
Pout, OUTPUT POWER (dBm)
Figure 7. 2 - Carrier CDMA ACPR, IM3 and Efficiency
versus Output Power
MHPA19010N
RF Device Data
Freescale Semiconductor
3
NOTES
MHPA19010N
4
RF Device Data
Freescale Semiconductor
NOTES
MHPA19010N
RF Device Data
Freescale Semiconductor
5
NOTES
MHPA19010N
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
A
2X
G
0.020 (0.51)
M
T A
R
1
T S
2
3
4
K
W
0.020 (0.51)
M
4X
D
T B
M
N
L
H
F
E
C
4X
P
0.020 (0.51)
T
SEATING
PLANE
M
A
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
S
J
M
S
B
M
Q
0.008 (0.20)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
STYLE 3:
PIN 1.
2.
3.
4.
CASE:
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
RF INPUT
VBIAS
VDD
RF OUTPUT
GROUND
CASE 301AP - 02
ISSUE E
Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2).
MHPA19010N
RF Device Data
Freescale Semiconductor
7
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800- 521- 6274 or +1 - 480- 768- 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800- 441- 2447 or 303 - 675- 2140
Fax: 303 - 675- 2150
[email protected]
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical
characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHPA19010N
Document Number: MHPA19010N
8Rev. 6, 5/2006
RF Device Data
Freescale Semiconductor
Similar pages