DATA SHEET MMBD4448W SEMICONDUCTOR H SOT-323 Plastic-Encapsulate DIODE SWITCHING DIODE SOT323 Unit:inch(mm) FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 250 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° High temperature soldering : 260OC / 10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS environment substance directive request ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbo Test conditions MIN Reverse breakdown voltage V(BR) R IR= 10µA 75 Reverse voltage leakage current IR VR=20V Forward voltage VF MAX UNIT 0.025 µA V VR=75V 2.5 IF=5mA 0.72 IF=10mA 0.855 IF=100mA 1 IF=150mA 1.25 V Diode capacitance CD VR=0V, f=1MHz 4 pF Reverse recovery time trr IF=IR=10mA 4 nS Irr=0.1×IR ,RL=100Ω http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS MMBD4448W 10 1000 REVERSE CURRENT, u A FORWARD CURRENT, mA TJ =125 OC 100 10 1 0.1 0.2 0.8 1.0 1.2 1.4 TJ =75 OC 0.1 0.01 TJ =25 OC 0.001 0.6 0.4 0 20 40 60 80 REVERSE VOLTAGE, Volts FORWARD VOLTAGE, Volts FIG. 1-TYPICAL FORWARD CHARACTERISTIC P D , POWER DISSIPATION (mW) 1.0 FIG. 2-TYPICAL REVERSE CHARACTERISTICS 500 400 300 200 100 0 50 100 150 200 AMBIENT TEMPERATURE( OC) FIG. 3 POWER DERATING CURVE http://www.yeashin.com 2 REV.02 20120305 100