AP18P10GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
160mΩ
ID
▼ Fast Switching Characteristic
G
D
S
-12A
TO-220CFM(I)
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+32
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-12
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-10
A
-48
A
31.25
W
0.25
W/℃
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
40
mJ
IAR
Avalanche Current
-9
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.0
℃/W
65
℃/W
1
200901064
AP18P10GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance3
VGS=-10V, ID=-8A
-
-
160
mΩ
VGS=-4.5V, ID=-6A
-
-
200
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=-100V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-80V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +32V, VDS=0V
-
-
+100
nA
ID=-8A
-
16
25.6
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8.7
-
nC
VDS=-50V
-
9
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=6.25Ω
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1590 2550
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
IS=-8A, VGS=0V,
-
49
-
ns
dI/dt=-100A/µs
-
110
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25Ω.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GI
20
40
-10V
-7.0V
-5.0V
-4.5V
30
-10V
-7.0V
-5.0V
-4.5V
o
T C =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
20
10
15
10
V G = -3.0V
5
V G = -3.0 V
0
0
0
4
8
12
16
20
0
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
300
I D = - 12 A
V G = -10V
Normalized RDS(ON)
I D = -8 A
T C =25 ℃
270
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
240
210
180
1.6
1.2
0.8
150
120
0.4
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
6
1.5
Normalized -VGS(th) (V)
-IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j , Junction Temperature ( o C)
T j =25 o C
4
1.0
0.5
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10GI
f=1.0MHz
10000
12
C iss
V DS = - 80 V
ID= -8A
1000
9
C (pF)
-VGS , Gate to Source Voltage (V)
15
6
C oss
C rss
100
3
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
10
-ID (A)
1ms
10ms
100ms
1s
DC
1
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS = -5V
T j =25 o C
-ID , Drain Current (A)
12.5
VG
T j =150 o C
QG
10
-4.5V
QGS
7.5
QGD
5
2.5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4