Plastic-Encapsulate Transistors FEATURES MMDT5401(PNP) Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5551) Ideal for Medium Power Amplification and Switching MARKING: K4M MAXIMUM RATINGS (TA=25 C2 B1 E1 E2 B2 C1 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Power Dissipation IC 200 mW Junction Temperature TJ 150 Storage Temperature Tstg SOT-363 -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage VCBO IC=-100μA , IE=0 -160 V Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -150 V Emitter-base breakdown voltage VEBO IE=-10μA, -5 V Collector cut-off current ICBO VCB=-120 V , Emitter cut-off current IEBO VEB=-3V , hFE(1) VCE=-5 V, IC= -1mA 50 hFE(2) VCE=-5 V, IC= -10mA 100 hFE(3) VCE=-5 V, IC= -50mA 50 DC current gain Test conditions IC=0 Min IE=0 IC=0 Typ Max Unit -0.05 μA -0.05 μA 300 VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA -1 V VBE(sat)2 IC= -50 mA, IB=-5mA -1 V Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE= -10V, IC= -10mA,f = 100MHz Output Capacitance Cob VCB=-10V, Noise Figure NF VCE= -5.0V, IC= -200μA, IE= 0,f=1MHz 100 MHz 6 pF 8.0 dB RS= 10Ω,f = 1.0kHz GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors MMDT5401 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2