Powerex Power CM600DU-24NFH Dual igbtmod nfh-series module 600 amperes/1200 volt Datasheet

CM600DU-24NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NFH-Series Module
600 Amperes/1200 Volts
A
M
M
D
V
E2 G2
L
H
J
C2E1
E2
C1
G1 E1
E
U
W
B
H
R
N
Y
X
L
Q
Q
AC
P
AD
S - NUTS (3 TYP)
T - (4 TYP)
Z
K
G
G
Z
K
V
AA
Z
K
AB M
C
F
LABEL
G2
E2
C2E1
Di1
Tr2
E2
Tr1
C1
Di2
E1
G1
Tolerance Otherwise Specified (mm)
Division of Dimension
Tolerance
0.5 to
3
±0.2
over
3 to
6
±0.3
over
6 to
30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.15
80.0
C
1.14+0.04/-0.01 29.0+1.0/-0.5
D
3.66±0.01
93.0±0.25
E
2.44±0.01
62.0±0.25
F
0.83
21.2
G
0.28
7.0
H
0.24
6.0
J
0.59
15.0
K
0.55
14.0
L
0.35
9.0
M
0.33
8.5
N
0.69
17.5
P
0.85
21.5
07/11 Rev. 2
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
AD
Inches
0.98
1.23
M6 Metric
0.26 Dia.
0.4
0.16
0.87
0.72
0.36
0.71
0.11
0.29
0.21
0.47
Millimeters
25.0
31.4
M6
6.5 Dia.
10.0
4.0
22.2
18.25
9.25
18.0
2.8
7.5
5.3
12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-24NFH is a 1200V
(VCES), 600 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
600
24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600DU-24NF
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
600*
Amperes
ICM
1200*
Amperes
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
IE
600*
Amperes
IEM
1200*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
PC
1550
Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
PC
3700
Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
—
580
Grams
VISO
2500
Volts
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
2.0
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C
—
5.0
6.5
Volts
IC = 600A, VGE = 15V, Tj = 125°C
—
5.0
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
—
2700
—
nC
Emitter-Collector Voltage**
VEC
IE = 600A, VGE = 0V
—
—
3.5
Volts
Min.
Typ.
Max.
Units
—
—
95
nF
—
—
8.0
nF
—
—
1.8
nF
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
Test Conditions
VCE = 10V, VGE = 0V
—
—
400
ns
tr
VCC = 600V, IC = 600A,
—
—
120
ns
td(off)
VGE1 = VGE2 = 15V, RG = 0.52Ω,
—
—
700
ns
tf
Inductive Load
—
—
150
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
—
—
250
ns
Diode Reverse Recovery Charge**
Qrr
IE = 600A
—
28
—
µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
—
0.083
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
—
0.15
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
—
0.034
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)'D
Per FWDi 1/2 Module, TC Reference
—
—
0.06
°C/W
Rth(c-f)
Per 1/2 Module, Thermal Grease Applied
—
0.02
—
°C/W
0.52
—
5.2
Ω
Point per Outline Drawing
Point per Outline Drawing
TC Reference Point Under Chips
TC Reference Point Under Chips
Contact Thermal Resistance
External Gate Resistance
RG
OUTPUT CHARACTERISTICS
(TYPICAL)
12
800
600
11
400
10
200
9
0
0
1000
800
600
400
200
2
4
6
8
0
10
5
0
15
10
7
6
5
4
3
2
1
0
20
VGE = 15V
Tj = 25oC
Tj = 125oC
8
200
0
400
600
800 1000 1200
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
Tj = 25oC
IC = 1200A
8
6
IC = 600A
4
IC = 240A
2
0
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
07/11 Rev. 2
20
103
Tj = 25oC
Tj = 125oC
CAPACITANCE, Cies, Coes, Cres, (nF)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
9
VGE = 10V
Tj = 25oC
Tj = 125oC
8
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
13
15
1000
1200
14
VGE = 20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
103
102
101
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
VGE = 0V
102
Cies
101
Coes
Cres
100
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tf
101
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
100
101
102
101
102
102
101
101
103
VCC = 400V
VCC = 600V
12
8
4
0
0
1000
2000
3000
4000
GATE CHARGE, QG, (nC)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
100
101
102
103
102
102
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
101
100
10-1
Err
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
102
100
10-1
101
VCC = 600V
VGE = ±15V
IE = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
100
GATE RESISTANCE, RG, (Ω)
100
101
101
10-2
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
100
101
Err
VCC = 600V
VGE = ±15V
RG = 0.52Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
16
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
4
101
103
102
IC = 600A
COLLECTOR CURRENT, IC, (AMPERES)
VCC = 600V
VGE = ±15V
RG = 0.52Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
100
10-1
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
tr
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
SWITCHING TIME, (ns)
td(on)
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive Load
Irr
trr
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
td(off)
GATE CHARGE VS. VGE
103
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.083°C/W
(IGBT)
Rth(j-c) =
0.15°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
07/11 Rev. 2
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