NTE NTE129 Silicon complementary transistors audio output, video, driver Datasheet

NTE128 (NPN) & NTE129 (PNP)
Silicon Complementary Transistors
Audio Output, Video, Driver
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCBO
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/°C
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction–to–Ambient, RthJA
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300°C
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE129 (PNP).
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 30mA, IB = 0
80
–
–
V
IC = 10mA
80
–
–
V
IC = 100µA, IE = 0
140
–
–
V
IC = 10µA
80
–
–
V
IE = 100µA, IC = 0
7
–
–
V
IE = 10µA
5
–
–
V
VCB = 90V, IE = 0
–
–
0.01
µA
VCB = 90V, IE = 0, TA = +150°C
–
–
10
µA
VCB = 60V
–
–
50
nA
VCB = 60V, TA = +150°C
–
–
50
µA
VBE = 5V, IC = 0
–
–
0.010
µA
VBE = 5V
–
–
10
µA
IC = 0.1mA, VCE = 10V
50
–
–
IC = 10mA, VCE = 10V
90
–
–
IC = 150mA, VCE = 10V
100
–
300
IC = 150mA, VCE = 10V, TC = –55°C
40
–
–
IC = 500mA, VCE = 10V
50
–
–
IC = 1.0A, VCE = 10V
15
–
–
IC = 100µA, VCE = 5V
75
–
–
IC = 100mA, VCE = 5V
100
–
300
IC = 100mA, VCE = 5V, TC = –55°C
40
–
–
IC = 500mA, VCE = 5V
70
–
–
IC = 1.0A, VCE = 5V
25
–
–
IC = 150mA, IB = 15mA
–
–
0.2
V
IC = 500mA, IB = 50mA
–
–
0.5
V
IC = 150mA, IB = 15mA
–
–
0.15
V
IC = 500mA, IB = 50mA
–
–
0.5
V
IC = 150mA, IB = 15mA
–
–
1.1
V
–
–
0.9
V
–
–
1.1
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
NTE128
V(BR)CEO
NTE129
Collector–Base Breakdown Voltage
NTE128
V(BR)CBO
NTE129
Emitter–Base Breakdown Voltage
NTE128
V(BR)EBO
NTE129
Collector Cutoff Current
NTE128
ICBO
NTE129
Emitter Cutoff Current
NTE128
IEBO
NTE129
ON Characteristics (Note 2)
DC Current Gain
NTE128
hFE
NTE129
Collector–Emitter Saturation Voltage
NTE128
VCE(sat)
NTE129
Base–Emitter Saturation Voltage
NTE128
VBE(sat)
NTE129
Base–Emitter ON Voltage (NTE129 Only)
VBE(on)
IC = 500mA, VCE = 500mV
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
Electrical Characteristics (Cont’d): TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
400
MHz
VCB = 10V, IE = 0, f = 1MHz
–
–
12
pF
VCE = 10V, f = 1MHz
–
–
20
pF
VBE = 500mV, IC = 0, f = 1MHz
–
–
60
pF
VEB = 500mV, f = 1MHz
–
–
110
pF
IC = 1mA, VCE = 5V, f = 1kHz
80
–
400
IC = 50mA, VCE = 10V, f = 100MHz
1
–
4
IE = 10mA, VCB = 10V, f = 79.8MHz
–
–
400
ps
IC = 100µA, VCE = 10V, RS = 1kΩ,
f = 1kHz
–
–
4
dB
Small–Signal Characteristics
Current–Gain – Bandwidth Product
(NTE128 Only)
Output Capacitance
NTE128
fT
Cobo
NTE129
Input Capacitance
NTE128
Cibo
NTE129
Small–Signal Current Gain
NTE128
hfe
NTE129
Collector–Base Time Constant
(NTE128 Only)
Noise Figure (NTE128 Only)
rb′Cc
NF
IC = 50mA, VCE = 10V, f = 20MHz
Switching Characteristics (NTE129 Only)
Storage Time
ts
IC = 500mA, IB1 = IB2 = 50mA
–
–
350
ns
Turn–On Time
ton
IC = 500mA, IB1 = 50mA
–
–
100
ns
IC = 500mA, IB1 = IB2 = 50mA
–
–
50
ns
Fall Time
tf
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45°
.031 (.793)
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