CYStech Electronics Corp. Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTE1K8N25KJ3 BVDSS ID RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=6V, ID=1A 250V 2.5A 1.63Ω(typ) 1.41Ω(typ) Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package • ESD protected Equivalent Circuit Outline MTE1K8N25KJ3 D TO-252(DPAK) G S G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 ESD susceptibility *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM 250 ±20 2.5 1.6 10 2000 25 10 -55~+150 Pd Tj, Tstg Unit V A V W °C *2. Human body model, 1.5kΩ in series with 100pF MTE1K8N25KJ3 CYStek Product Specification Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 2/8 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Rth,j-a Value 5 50 (Note 1) 110 (Note 2) Unit °C/W Note : 1.When mounted on PCB of 1 in² pad area, t≤10s. 2. When mounted on the minimum pad size recommended (PCB mount), t≤10s. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. Unit Test Conditions 250 1.5 - 0.3 2.3 2.4 1.63 1.41 3.5 ±10 1 25 2.2 2 V V/°C V S VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS =VGS, ID=250μA VDS =15V, ID=2A VGS=±20V, VDS=0V VDS =200V, VGS =0V VDS =200V, VGS =0V, Tj=125°C VGS =10V, ID=2A VGS =6V, ID=1A - 4.5 1 1.5 12 11 13 8 215 16 7.7 - - 0.79 80 330 2.5 10 1.2 - μA Ω nC ID=2.5A, VDS=200V, VGS=10V ns VDS=125V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTE1K8N25KJ3-0-T3-G MTE1K8N25KJ3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel CYStek Product Specification Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 4 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 3.6 10V,9V,8V,7V,6V, 5V 3.2 2.8 2.4 2 VGS=4V 1.6 1.2 0.8 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0.4 0 0 5 10 15 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 4.5 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(Ω) 5 4 3.5 3 2.5 VGS=6V VGS=4.5V 2 1.5 1 VGS=10V VGS=0V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.5 0.2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 5 2.8 ID=2A 4.5 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 4 3.5 3 2.5 2 1.5 1 0.5 2.4 VGS=10V, ID=2A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 1.63Ω 0.4 0 0 0 MTE1K8N25KJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss 10 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 VDS=200V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Gate Charge Characteristics 10 1 0.1 VDS=15V Ta=25°C Pulsed 8 VDS=125V 6 4 2 ID=2.5A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 1 2 3 4 Qg, Total Gate Charge(nC) 5 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 3 RDSON Limited 10 100μs 1ms 10ms 100ms 1 1s 0.1 TC=25°C, Tj=150°C VGS=10V, RθJC=5°C/W Single Pulse DC ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 2.5 2 1.5 1 0.5 VGS=10V, RθJC=5°C/W 0 0.01 0.1 MTE1K8N25KJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 5/8 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 1000 4 TJ(MAX) =150°C TC=25°C θJC=5°C/W 800 3 700 Power (W) ID, Drain Current(A) 900 VDS=10V 3.5 2.5 2 1.5 600 500 400 300 1 200 0.5 100 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE1K8N25KJ3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTE1K8N25KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE1K8N25KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C929J3 Issued Date : 2013.07.26 Revised Date : 2013.09.06 Page No. : 8/8 TO-252 Dimension Marking: 4 Device Name E1K8 N25K Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE1K8N25KJ3 CYStek Product Specification