ON NTMFD4C86NT1G Dual n-channel so8fl Datasheet

NTMFD4C86N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
•
•
•
•
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
RDS(on) MAX
5.4 mW @ 10 V
Q1 Top FET
30 V
20 A
8.1 mW @ 4.5 V
Q2 Bottom
FET
30 V
• DC−DC Converters
• System Voltage Rails
• Point of Load
ID MAX
2.6 mW @ 10 V
32 A
3.4 mW @ 4.5 V
D1
(3, 4, 9)
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
Figure 1. Typical Application Circuit
D1 4
100
D1 3
EFFICIENCY (%)
95
S1 2
5 SW
9
D1
10
S2
6 SW
7 SW
G1 1
8 G2
90
(Bottom View)
85
MARKING
DIAGRAM
80
VIN = 12 V
VOUT = 1.2 V
VGS = 5 V
FSW = 300 kHz
TA = 25°C
75
70
0
5
10
15
LOAD CURRENT (A)
20
1
DFN8
CASE 506CR
4C86N
AYWZZ
1
25
4C86N
A
Y
W
ZZ
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NTMFD4C86N/D
NTMFD4C86N
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Q1
Drain−to−Source Voltage
Q2
Gate−to−Source Voltage
Q1
Gate−to−Source Voltage
Q2
Continuous Drain Current RqJA (Note 1)
TA = 25°C
Q1
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
14.8
TA = 85°C
TA = 25°C
10.7
Q2
23.7
TA = 85°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
A
17.1
Q1
PD
1.89
ID
20.2
W
Q2
Q1
TA = 85°C
TA = 25°C
Steady
State
14.5
Q2
32.3
TA = 85°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Continuous Drain Current
RqJA (Note 2)
TA = 25°C
A
23.3
Q1
PD
3.51
ID
11.3
W
Q2
Q1
TA = 85°C
TA = 25°C
8.1
Q2
18.1
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25 °C
Pulsed Drain Current
TA = 25°C
tp = 10 ms
A
13.0
Q1
PD
1.10
W
IDM
160
A
Q2
Operating Junction and Storage Temperature
Q1
Q2
Q1
280
TJ, TSTG
−55 to +150
°C
IS
10
A
Q2
Source Current (Body Diode)
Q1
Q2
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C,
VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W)
10
dV/dt
6
V/ns
mJ
IL = 20 Apk
Q1
EAS
20
IL = 40 Apk
Q2
EAS
80
TL
260
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
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2
NTMFD4C86N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Top) – Steady State (Note 3)
Parameter
RqJC
3.3
Junction−to−Ambient – Steady State (Note 3)
RqJA
66.0
Junction−to−Ambient – Steady State (Note 4)
RqJA
113.7
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
35.6
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
V(BR)DSS
VGS = 0 V, ID = 250 mA
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Q1
Drain−to−Source Breakdown Voltage Temperature
Coefficient
Q1
Q2
V(BR)DSS
/ TJ
Zero Gate Voltage Drain
Current
Q1
IDSS
Q2
Q2
Gate−to−Source Leakage
Current
Q1
30
17
mV /
°C
16.5
VGS = 0 V,
VDS = 24 V
VGS = 0 V,
VDS = 24 V
IGSS
V
30
TJ = 25°C
1
TJ = 125°C
10
TJ = 25°C
1
VGS = 0 V, VDS = ±20 V
mA
100
Q2
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
VGS(TH)
VGS = VDS, ID = 250 mA
Q2
Negative Threshold Temperature Coefficient
Q1
Drain−to−Source On Resistance
Q1
Q2
VGS(TH) /
TJ
RDS(on)
Q2
1.3
2.2
1.3
2.2
4.5
V
mV /
°C
4.6
VGS = 10 V
ID = 30 A
4.3
5.4
VGS = 4.5 V
ID = 18 A
6.5
8.1
VGS = 10 V
ID = 30 A
1.7
2.6
VGS = 4.5 V
ID = 12.5 A
2.4
3.4
mW
CAPACITANCES
Q1
Input Capacitance
Q2
1153
CISS
1541
Q1
Output Capacitance
Q2
532
COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
Q1
Reverse Capacitance
Q2
764
pF
107
CRSS
42
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4C86N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
Total Gate Charge
Q2
10.9
QG(TOT)
21.6
Q1
Threshold Gate Charge
Q2
1.2
QG(TH)
Q1
Gate−to−Source Charge
Q2
1.4
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QGS
Q2
5.4
QGD
5.5
Q1
Total Gate Charge
Q2
22.2
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
RG
Q1
Gate Resistance
nC
8.6
Q1
Gate−to−Drain Charge
3.4
47.5
1.0
TA = 25°C
Q2
1.0
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Q1
Turn−On Delay Time
Q2
8.9
td(ON)
8.3
Q1
Rise Time
21.2
tr
Q2
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Q1
Turn−Off Delay Time
Q2
td(OFF)
15.3
ns
19.3
Q1
Fall Time
15.1
4.4
tf
Q2
4.2
SWITCHING CHARACTERISTICS (Note 6)
Q1
Turn−On Delay Time
Q2
6.7
td(ON)
6.3
Q1
Rise Time
Q2
19.5
tr
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Q1
Turn−Off Delay Time
Q2
td(OFF)
Q2
20.1
ns
22.8
Q1
Fall Time
13.8
2.8
tf
3.2
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V,
IS = 10 A
Q1
Forward Voltage
VSD
Q2
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.80
TJ = 125°C
0.60
TJ = 25°C
0.78
TJ = 125°C
0.62
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTMFD4C86N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Reverse Recovery Time
Q2
29.1
tRR
33.7
Q1
Charge Time
Q2
14.5
ta
VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A
Q1
Discharge Time
Q2
17.4
tb
Q2
14.6
16.3
Q1
Reverse Recovery Charge
ns
21
QRR
27.5
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTMFD4C86N
TYPICAL CHARACTERISTICS − Q1
100
4.5 V to 10 V
100
4.0 V
90
TJ = 25°C
90
3.8 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80
70
3.6 V
60
3.4 V
50
40
3.2 V
30
3.0 V
20
2.8 V
VGS = 2.6 V
10
70
60
50
40
30
20
TJ = 125°C
1
2
3
4
0
5
0.5 1.0 1.5 2.0
2.5 3.0
3.5 4.0
4.5 5.0 5.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region Characteristics
Figure 4. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.026
0.024
0.022
ID = 30 A
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3
TJ = −55°C
TJ = 25°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
80
10
0
4
5
6
7
8
9
10
0.009
0.008
TJ = 25°C
VGS = 4.5 V
0.007
0.006
0.005
VGS = 10 V
0.004
0.003
10
20
30
40
50
60
70
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance vs. Drain Current and
Gate Voltage
2000
1.7
1.6
1.5
1800
VGS = 10 V
ID = 30 A
C, CAPACITANCE (pF)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
VDS = 3 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
VGS = 0 V
TJ = 25°C
f = 1 MHz
1600
1400
Ciss
1200
1000
Coss
800
600
400
Crss
200
0
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. On−Resistance Variation with
Temperature
Figure 8. Capacitance Variation
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6
30
NTMFD4C86N
20
12
QT
18
10
IS, SOURCE CURRENT (A)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS − Q1
VGS = 45 V
VDS = 15 V
ID = 30 A
TJ = 25°C
8
6
4
QGS
QGD
2
14
12
10
8
6
4
2
0
0
0
2
6
4
8
0.1
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
1000
1000
ID, DRAIN CURRENT (A)
VGS = 10 V
VDS = 15 V
ID = 15 A
t, TIME (ns)
TJ = 25°C
16
td(off)
tf
100
tr
td(on)
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
100
10 ms
100 ms
1 ms
10
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1
1
1
100
10
0.1
1
10
100
RG, GATE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
100
50% Duty Cycle
R(t) (°C/W)
10
1
0.1
0.01
20%
10%
5%
2%
1%
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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1
10
100
1000
NTMFD4C86N
TYPICAL CHARACTERISTICS − Q2
160
3.6 V
3.2 V
3.8 V to 10 V
100
3.0 V
80
60
2.8 V
40
2.6 V
20
0
1
2
3
4
100
80
60
TJ = 125°C
40
0
5
TJ = −55°C
TJ = 25°C
0
0.5
1.0
1.5
2.0
2.5
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
ID = 30 A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
4
5
6
7
8
9
10
4.0
3.0
TJ = 25°C
VGS = 4.5 V
2.5
2.0
VGS = 10 V
1.5
1.0
0.5
0
25
50
75
100
125
150
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 16. On−Resistance vs. Gate−to−Source
Voltage
Figure 17. On−Resistance vs. Drain Current
and Gate Voltage
1.8
1.6
VGS = 10 V
ID = 30 A
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
1600
1200
Coss
800
400
0.2
0
−50
VGS = 0 V
TJ = 25°C
f = 1 MHz
2000
C, CAPACITANCE (pF)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (mW)
3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4.5
2
120
20
VGS = 2.4 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(mW)
140
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(mW)
ID, DRAIN CURRENT (A)
140
120
VDS = 3 V
TJ = 25°C
3.4 V
ID, DRAIN CURRENT (A)
160
Crss
0
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 18. On−Resistance Variation with
Temperature
Figure 19. Capacitance Variation
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8
30
NTMFD4C86N
1.00E+06
12
QT
8
6
4
QGS
QGD
VGS = 4.5 V
VDS = 15 V
ID = 30 A
TJ = 25°C
2
0
0
4
12
8
VGS = 0 V
1.00E+05
16
IDSS, LEAKAGE (nA)
10
TJ = 150°C
1.00E+04
TJ = 125°C
1.00E+03
TJ = 85°C
1.00E+02
1.00E+01
1.00E+00
0
20
5
10
15
20
25
30
QG, TOTAL GATE CHARGE (nC)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 20. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 21. Drain−to−Source Leakage Current
vs. Voltage
20
18
IS, SOURCE CURRENT (A)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS − Q2
TJ = 25°C
16
14
12
10
8
6
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 22. Diode Forward Voltage vs. Current
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0.9
35
NTMFD4C86N
TYPICAL CHARACTERISTICS − Q2
1000
1000
td(off)
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
VGS = 10 V
VDS = 15 V
ID = 15 A
tf
tr
td(on)
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
100
10 ms
100 ms
1 ms
10
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1
1
1
10
100
0.1
1
10
100
RG, GATE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 23. Resistive Switching Time Variation
vs. Gate Resistance
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
100
50% Duty Cycle
R(t) (°C/W)
10
1
0.1
0.01
20%
10%
5%
2%
1%
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 25. Thermal Characteristics
ORDERING INFORMATION
Package
Shipping†
NTMFD4C86NT1G
DFN8
(Pb−Free)
1500 / Tape & Reel
NTMFD4C86NT3G
DFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NTMFD4C86N
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P PowerPhase FET
CASE 506CR
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
0.20 C
D
A
B
D1
8
PIN ONE
IDENTIFIER
7
ÉÉ
ÉÉ
1
2
6
2X
0.20 C
5
E1
E
4X
h
3
c
4
A1
TOP VIEW
A
0.10 C
DETAIL A
0.10 C
C
NOTE 4
SIDE VIEW
8X
b
0.10
M
0.05
M
1
5X
DETAIL A
L
6X
SEATING
PLANE
NOTE 6
0.10
C A B
C
C A B
NOTE 3
1
E3
b2
0.10
M
C A B
E2
G
RECOMMENDED
SOLDERING FOOTPRINT*
L2
D3
e/2
e
BOTTOM VIEW
MILLIMETERS
MAX
MIN
1.10
0.90
0.00
0.05
0.40
0.60
0.40
0.60
0.20
0.30
5.15 BSC
4.90
5.10
3.70
3.90
2.96
3.16
6.15 BSC
5.80
6.00
2.37
2.57
1.05
1.25
1.36
1.56
1.27 BSC
0.625 BSC
1.615 BSC
−−−
12 _
0.34
0.59
1.68
1.93
D2
G1
E4
M
DIM
A
A1
b
b2
c
D
D1
D2
D3
E
E1
E2
E3
E4
e
G
G1
h
L
L2
5.50
4.05
SUPPLEMENTAL
BOTTOM VIEW
1.27
PITCH
0.62
2.07
5X
0.75
0.54
1.22
2.67
1.66
5X
0.71 2.31
0.76
0.23
0.98
6.50
6X
0.65
4.10
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
NTMFD4C86N
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
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