IRF7456PbF-1
SMPS MOSFET
VDS
RDS(on) max
(@VGS = 10V)
20
V
0.0065
Ω
41
nC
16
A
Qg (typical)
ID
(@TA = 25°C)
HEXFET® Power MOSFET
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Applications
l High Frequency DC-DC Converters with Synchronous Rectification
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7456PbF-1
SO-8
⇒
Standard Pack
Form
Tube/Bulk
Tape and Reel
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
Quantity
95
4000
IRF7456PbF-1
IRF7456TRPbF-1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 12
16
13
130
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJA
Max.
Units
50
°C/W
Maximum Junction-to-Ambient
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
1
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IRF7456PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250μA
0.024 ––– V/°C Reference to 25°C, ID = 1mA
0.00470.0065
VGS = 10V, ID = 16A
Ω
0.00570.0075
VGS = 4.5V, ID = 13A
0.011 0.020
VGS = 2.8V, ID = 3.5A
––– 2.0
V
VDS = VGS, ID = 250μA
––– 20
VDS = 16V, VGS = 0V
μA
––– 100
VDS = 16V, VGS = 0V, TJ = 125°C
––– 200
VGS = 12V
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
41
9.7
18
20
25
50
52
3640
1570
330
Max. Units
Conditions
–––
S
VDS = 10V, ID = 16A
62
ID = 16A
15
nC
VDS = 16V
27
VGS = 5.0V,
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
250
16
0.25
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
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Min. Typ. Max. Units
–––
–––
2.5
–––
–––
130
–––
–––
–––
–––
48
74
1.2
72
110
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.5A, VGS = 0V
TJ = 25°C, IF = 2.5A
di/dt = 100A/μs
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D
S
November 20, 2013
IRF7456PbF-1
1000
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
100
100
10
1
2.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
10
10
2.0V
1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100.0
ID, Drain-to-Source Current (Α)
T J = 150°C
10.0
T J = 25°C
1.0
VDS = 15V
20μs PULSE WIDTH
2.2
2.4
2.6
2.8
3.0
1
10
100
Fig 2. Typical Output Characteristics
2.0
0.1
20μs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.2
ID = 16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
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Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7456PbF-1
6000
4000
VGS , Gate-to-Source Voltage (V)
5000
Ciss
3000
Coss
2000
1000
ID = 16A
VDS = 16V
10
8
6
4
2
Crss
0
1
10
0
100
FOR TEST CIRCUIT
SEE FIGURE 14
13
0
20
VDS , Drain-to-Source Voltage (V)
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
TJ = 150 ° C
10us
100
10
TJ = 25 ° C
1
100us
1ms
10
10ms
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
12
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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2.2
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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100
IRF7456PbF-1
20
V DS
ID , Drain Current (A)
V GS
15
RD
D.U.T.
RG
+
-V DD
10V
4.5V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
0.01
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRF7456PbF-1
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.0062
VGS = 4.5V
0.0058
0.0054
0.0050
VGS = 10V
0.0046
0
20
40
60
80
100
0.012
0.010
0.008
ID = 16A
0.006
0.004
0
ID , Drain Current (A)
4
8
12
16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3μF
D.U.T.
+
V
- DS
QGD
600
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
tp
I AS
DRIVER
+
- VDD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
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A
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2μF
12V
TOP
500
BOTTOM
ID
7.2A
10A
16A
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7456PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
6X
e
e1
0.25 [.010]
MAX
1.27 BAS IC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
MILLIMET ERS
MAX
A
5
INCHES
MIN
A1
y
0.10 [.004]
8X L
8X c
7
C A B
F OOTPRINT
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNATIONAL
RECTIFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7456PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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