PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 32nC 15nC 3.2nC 62nC 23nC -1.8V Q1-Q2 l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) D G S S S S D DirectFET ISOMETRIC MC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP MC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Orderable part number Package Type IRF9395MTRPbF IRF9395MTR1PbF DirectFET Medium Can DirectFET Medium Can Absolute Maximum Ratings Max. Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM g Typical RDS(on) (mΩ) 24 ID = -14A 20 16 12 T J = 125°C 8 4 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com Units -30 ±20 -14 -11 -75 -110 e e f -VGS, Gate-to-Source Voltage (V) VDS Note Standard Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 V A 14.0 ID= -11A 12.0 VDS= -24V VDS= -15V 10.0 VDS= -6V 8.0 6.0 4.0 2.0 0.0 0 20 40 60 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. 1 12/2/10 IRF9395MTRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Conditions Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -30 ––– ––– 0.012 Static Drain-to-Source On-Resistance ––– ––– 5.3 9.0 V VGS = 0V, ID = -250µA mV/°C Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -14A 7.0 mΩ V 11.9 GS = -4.5V, ID = -11 A VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.1 ––– ––– -1.0 mV/°C Gate-to-Source Forward Leakage ––– ––– ––– ––– -150 -100 Gate-to-Source Reverse Leakage Forward Transconductance ––– 40 ––– ––– 100 ––– BVDSS ∆ΒVDSS/∆TJ RDS(on) IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss ––– ––– Total Gate Charge ––– 64 ––– Total Gate Charge Pre- Vth Gate-to-Source Charge ––– ––– 32 6.5 ––– ––– Post -Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 3.2 15 ––– ––– Gate Charge Overdrive Switch charge (Qgs2 + Qgd) h h VDS = VGS, ID = -50µA µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C nA VGS = -20V VGS = 20V S VDS = -15V, ID = -11A VDS = -15V, VGS = -10V, ID = -11A nC VDS = -15V VGS = -4.5V ID = -11A ––– 7.3 ––– Output Charge ––– ––– 18.2 23 ––– ––– Gate Resistance Turn-On Delay Time ––– ––– 15 16 ––– ––– Rise Time Turn-Off Delay Time ––– ––– 142 76 ––– ––– Fall Time ––– 121 ––– Input Capacitance Output Capacitance ––– ––– 3241 820 ––– ––– Reverse Transfer Capacitance ––– 466 ––– Min. Typ. Max. Units See Fig.15 nC VDS = -16V, VGS = 0V Ω ns h VDD = -15V, VGS = -4.5V ID = -11A RG = 1.8Ω See Fig.17 VGS = 0V pF VDS = -15V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ––– ––– -57 A ISM Pulsed Source Current (Body Diode) ––– ––– -110 VSD Diode Forward Voltage Reverse Recovery Time ––– ––– ––– 43 -1.2 65 V ns Reverse Recovery Charge ––– 62 93 nC trr Qrr g Conditions MOSFET symbol D showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = -11A, VGS = 0V h TJ = 25°C, IF = -11A, ,VDD = -15V di/dt = 260A/µs h Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF9395MTRPbF Absolute Maximum Ratings PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Max. Parameter e e f Units 2.1 1.3 57 270 -40 to + 150 Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range W °C Thermal Resistance e i j fk RθJA RθJA RθJA RθJC RθJ-PCB Parameter Typ. Max. Units ––– 12.5 20 ––– 1.0 60 ––– ––– 2.2 ––– °C/W Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case , Junction-to-PCB Mounted Linear Derating Factor e 0.02 W/°C 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 0.1 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 0.001 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 Ri (°C/W) τA τ1 τ2 τ2 τ3 τ4 τ3 Ci= τi/Ri Ci= τi/Ri 0.01 τ4 τA τi (sec) 10.609 0.239813 3.5414 0.007823 24.659 2.632793 21.032 18.15739 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. Surface mounted on 1 in. square Cu board (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF9395MTRPbF 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP VGS -10V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V -2.6V 100 10 1 -2.6V 0.1 10 -2.6V ≤60µs PULSE WIDTH 1 1 10 0.1 100 Fig 4. Typical Output Characteristics Typical RDS(on) (Normalized) -I D, Drain-to-Source Current (A) ID = -14A 100 10 T J = 150°C T J = 25°C T J = -40°C 0.1 3 4 V GS = -10V V GS = -4.5V 1.0 0.5 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature 38 100000 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 30 Typical RDS(on) ( mΩ) 10000 Ciss Coss 1000 T J = 25°C 34 C oss = C ds + C gd C, Capacitance(pF) 100 1.5 VDS = -15V ≤60µs PULSE WIDTH 2 10 Fig 5. Typical Output Characteristics 1000 1 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) 1 ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 BOTTOM VGS -10V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V -2.6V Crss Vgs = -4.5V Vgs = -6.0V Vgs = -8.0V Vgs = -10V Vgs = -12V 26 22 18 14 10 6 2 100 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 0 25 50 75 100 125 -I D, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF9395MTRPbF 1000 T J = 150°C T J = 25°C T J = -40°C 100 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 1ms 10 10ms DC 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 100µs 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.01 -VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 9 6 3 0 75 100 125 10 100 3.0 2.5 2.0 1.5 ID = 50µA ID = 250µA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature 1200 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain Current (A) 12 50 1 Fig 11. Maximum Safe Operating Area 15 25 0.1 -VDS, Drain-to-Source Voltage (V) ID TOP -1.2A -1.9A BOTTOM -11A 1000 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF9395MTRPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS tp 15V DRIVER L VDS D.U.T RG 20V + - VDD IAS I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG A Fig 16b. Unclamped Inductive Waveforms td(on) RD tr t d(off) tf VGS 10% D.U.T. + - VDD 90% V10V GS VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 Fig 17b. Switching Time Waveforms www.irf.com IRF9395MTRPbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. Re-Applied Voltage + Body Diode VDD Forward Drop Inductor Current Inductor Curent - ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET Board Footprint, MC Outline (Medium Size Can, C-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D www.irf.com G G S S S S D D 7 IRF9395MTRPbF DirectFET Outline Dimension, MC Outline (Medium Size Can, C-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J J1 K L M N P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 0.58 0.62 0.58 0.62 1.18 1.22 0.56 0.60 1.98 2.02 1.02 1.06 2.22 2.26 0.59 0.70 0.03 0.08 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.023 0.024 0.023 0.024 0.023 0.024 0.047 0.048 0.022 0.023 0.078 0.079 0.040 0.041 0.088 0.089 0.023 0.028 0.001 0.003 0.003 0.007 DirectFET Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 8 www.irf.com IRF9395MTRPbF DirectFET Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF9395MTRPBF). For 1000 parts on 7" reel, order IRF9395MTR1PBF NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 4.10 3.90 0.161 0.469 11.90 0.484 12.30 0.215 5.55 5.45 0.219 0.201 5.10 0.209 5.30 0.256 6.70 6.50 0.264 0.059 1.50 N.C N.C 0.059 1.60 1.50 0.063 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MAX MIN MIN CODE MAX MAX MAX MIN MIN 6.9 12.992 N.C A N.C N.C N.C 330.0 177.77 N.C 0.75 0.795 B N.C 20.2 19.06 N.C N.C 0.53 0.504 C 0.50 13.5 12.8 13.2 0.520 12.8 N.C 0.059 0.059 D N.C 1.5 1.5 N.C N.C 2.31 3.937 E N.C 58.72 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 18.4 0.724 13.50 0.47 0.488 G N.C 0.567 12.4 11.9 14.4 12.01 H 0.47 0.469 0.606 N.C 11.9 11.9 15.4 12.01 Qualification Information† Qualification level Moisture Sensitivity Level RoHS Compliant Consumer †† (per JEDEC JESD47F ††† guidelines) MSL3 DirectFET ††† (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/2010 www.irf.com 9