NTGS1135P Power MOSFET −8 V, −5.8 A, Single P−Channel, TSOP−6 Features • Ultra Low RDS(on) • 1.2 V RDS(on) Rating • This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications • Load Switch • Battery Management RDS(ON) MAX 31 mW @ −4.5 V 38 mW @ −2.5 V −8 V Parameter 300 mW @ −1.2 V Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V P−Channel Gate−to−Source Voltage VGS $6.0 V 1 2 5 6 ID −4.6 Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −3.3 tv5s TA = 25°C −5.8 Steady State PD Pulsed Drain Current A 3 0.97 TA = 25°C W tv5s 4 1.6 IDM −9.2 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature −4.6 A 57 mW @ −1.8 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Continuous Drain Current (Note 1) ID MAX Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1 in sq [2 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0751 in sq) MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 1 AA MG G 1 AA = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Ambient – Steady State (Note 1) RqJA 128 Junction−to−Ambient – t = 5 s (Note 1) RqJA 78 Junction−to−Ambient – Steady State (Note 2) RqJA 188 Unit 1 °C/W 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS1135PT1G Package Shipping† TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 0 1 Publication Order Number: NTGS1135P/D NTGS1135P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 V(BR)DSS/ TJ ID = −250 mA, Ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −6 V −1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±6 V $100 nA VGS(TH) VGS = VDS, ID = −250 mA −0.85 V OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V −8.4 mV/°C ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/ TJ RDS(on) gFS −0.35 −0.57 2.8 mV/°C VGS = −4.5 V, ID = −4.6 A 22 31 VGS = −2.5 V, ID = −2.5 A 28 38 VGS = −1.8 V, ID = −2.0 A 37 57 mW VGS = −1.5 V, ID = −1.0 A 47 73 VGS = −1.2 V, ID = −0.1 A 100 300 VDS = −4.0 V, ID = −3.0 A 1.2 S 2200 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = −6.0 V 400 CRSS 200 Total Gate Charge QG(TOT) 21 Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −8.0 V; ID = −2.5 A nC 0.9 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.8 3.9 td(ON) 10 tr 16 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = −4.5 V, VDS = −8.0 V, ID = −2.5 A, RG = 6.2 W tf ns 128 71 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A TJ = 25°C −0.6 25 VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.0 A QRR http://onsemi.com 2 V ns 11 14 13 3. Pulse Test: pulse width v 300 ms, duty cycle v 2% 4. Switching characteristics are independent of operating junction temperatures −1.0 nC NTGS1135P TYPICAL CHARACTERISTICS 10 −1.8 V −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) VDS ≥ −10 V −1.6 V −2.5 V −2.0 V 8 TJ = 25°C 6 −1.4 V 4 2 VGS = −1.2 V 0 0.5 1.0 1.5 2.0 2.5 6 4 TJ = −55°C 2 TJ = 125°C 0.6 0.8 1.2 1.0 1.4 1.6 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = −4.6 A TJ = 25°C 0.07 0.06 0.05 0.04 0.03 0.02 0.01 2.0 3.0 4.0 5.0 6.0 7.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.14 1.8 TJ = 25°C 0.12 VGS = −1.2 V 0.10 0.08 VGS = −1.5 V 0.06 VGS = −1.8 V 0.04 VGS = −2.5 V 0.02 0 VGS = −4.5 V 0 1.0 2.0 3.0 5.0 4.0 6.0 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.4 100000 ID = −4.6 A VGS = −4.5 V VGS = 0 V 1.2 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.08 0 1.0 8 0 0.4 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 −4.5 V 10000 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 150°C TJ = 125°C 1000 1 TJ, JUNCTION TEMPERATURE (°C) 2 3 4 5 6 7 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 8 NTGS1135P TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 2500 −VGS, GATE−TO−SOURCE VOLTAGE (V) 3000 VGS = 0 V TJ = 25°C Ciss 2000 1500 1000 Coss 500 0 Crss 0 1 2 3 4 5 6 7 8 4.0 3.0 2.0 Qgs Qgd 1.0 0 TJ = 25°C ID = −4.6 A 0 2.0 4.0 6.0 8.0 10 12 14 16 20 18 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 22 1.4 VDD = −8 V ID = −4.6 A VGS = −4.5 V td(off) −IS, SOURCE CURRENT (A) t, TIME (ns) Qt −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 tf 100 tr td(on) 10 1.0 5.0 1.0 10 1.0 0.8 0.6 0.4 0.2 0 100 VGS = 0 V TJ = 25°C 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS1135P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 DIM A A1 b c D E e L HE q 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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