Production specification SILICON BRIDGE RECTIFIERS DB151S--DB157S FEATURES Pb z Rating to 1000V PRVP z Surge overload rating to 40 Amperes peak z Glass passivated chip junctions z Reliable low cost construction utilizing molded Lead-free plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 z Lead: silver plated copper, solderde plated z Plastic material has UL flammability classification94V-O Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Reverse Voltage VRMS 35 75 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward Output current @TA=40℃ IF(AV) 1.5 A IFSM 40 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load Thermal Characteristics Characteristic Operating junction temperature range Storage temperature range Symbol DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS TJ -55 -- +150 ℃ TSTG -55 -- +150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage at 1.5A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Document Number: DFS705AA Symbol VF IR DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS 1.1 V 10 μA 1.0 mA www.gmicroelec.com 1 Production specification SILICON BRIDGE RECTIFIERS DB151S--DB157S PACKAGE OUTLINE DIMENSIONS DFS I - B + ~ ~ K Dim Min Max A 8.20 8.60 B 6.10 6.50 C 2.35 2.65 D 9.80 10.20 E 0.15 0.35 F 0.90 1.50 G E H C A G F D F 0.20MAX H 2.50 2.80 I 1.00 1.40 K 4.80 5.20 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping DB151S--DB157S DFS 50unit/pipe Document Number: DFS705AA www.gmicroelec.com 2 Production specification SILICON BRIDGE RECTIFIERS Document Number: DFS705AA DB151S--DB157S www.gmicroelec.com 3