MCH6421 Ordering number : ENA1264A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6421 General-Purpose Switching Device Applications Features • • Low ON-resistance 1.8V drive • • Ultrahigh-speed switching Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 20 V 5.5 A PW≤10μs, duty cycle≤1% 22 A When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 0.15 0 to 0.02 1 2 KV TL 3 0.65 Marking LOT No. 0.3 Electrical Connection 0.85 0.25 Packing Type : TL LOT No. 0.07 MCH6421-TL-E 4 2.1 1.6 0.25 Package Dimensions 2.0 V ±12 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 1, 2, 5, 6 3 4 http://semicon.sanyo.com/en/network 61312 TKIM/70908PE TIIM TC-00001490 No. A1264-1/7 MCH6421 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Unit max IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=2A 2.0 RDS(on)1 ID=2A, VGS=4.5V 29 38 mΩ RDS(on)2 ID=1A, VGS=2.5V 43 61 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 69 99 mΩ Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 20 V 1 μA ±10 μA 1.3 3.8 V S 410 pF 84 pF Crss 59 pF td(on) tr 7.5 ns 26 ns td(off) tf Fall Time typ ID=1mA, VGS=0V VDS=20V, VGS=0V Ciss Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. 38 ns 32 ns 5.1 nC VDS=10V, VGS=4.5V, ID=5.5A 0.7 nC IS=5.5A, VGS=0V 0.8 1.7 nC 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=2A RL=5Ω VIN D VOUT PW=10μs D.C.≤1% G P.G 50Ω S MCH6421 Ordering Information Device MCH6421-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb Free No. A1264-2/7 MCH6421 ID -- VDS VDS=10V 4.0 1.8V 3.5 2.0 1.5 1.5V 0.5 VGS=1.2V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 110 90 ID=0.5A 1.0A 60 2.0A 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 1.0 1.2 1.4 1.6 1.8 IT13837 100 90 A =0.5 V, I D 80 =1.8 VGS 70 A =1.0 V, I D 60 =2.5 VGS 50 .0A I =2 4.5V, D = V GS 40 30 20 10 0 --60 10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13839 IS -- VSD 7 5 VDS=10V 5 0.8 RDS(on) -- Ta IT13838 | yfs | -- ID 7 0.6 110 100 70 0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C 80 0.2 IT13836 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ VGS=0V 3 2 1.0 °C 75 7 5 3 1.0 7 5 3 5°C 25° C --25 °C C 5° --2 = Ta °C 25 2 Source Current, IS -- A 3 2 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 1.0 RDS(on) -- VGS 120 Forward Transfer Admittance, | yfs | -- S 1.5 1.0 0.5 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 0.2 5 0.4 0.5 Ciss, Coss, Crss -- pF td(off) 3 tf 2 tr td(on) 10 7 5 0.8 0.9 1.0 IT13841 f=1MHz 7 5 7 5 0.7 Ciss, Coss, Crss -- VDS 1000 2 100 0.6 Diode Forward Voltage, VSD -- V VDD=10V VGS=4.5V 3 3 2 0.01 0.3 IT13840 SW Time -- ID 7 5 Switching Time, SW Time -- ns 2.0 Ta= 7 1.0 2.5 C 2.5 3.0 --25 ° 3.0 5°C 2 5°C Drain Current, ID -- A 3.5 ID -- VGS 4.5 2.0V 8.0V 4.5V 4.0 Drain Current, ID -- A 3.5V 2.5V 4.5 Ciss 3 2 100 Coss 7 Crss 5 3 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13842 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT13843 No. A1264-3/7 MCH6421 VGS -- Qg 4.0 3 2 3.5 3.0 2.5 2.0 1.5 3 4 5 Total Gate Charge, Qg -- nC 6 IT13853 PD -- Ta 1.6 ID=5.5A 10 DC 10 op era tio Operation in this area is limited by RDS(on). 3 2 3 2 2 PW≤10μs 10 0μ 1m s s 1.0 7 5 0.5 1 IDP=22A 3 2 0.1 7 5 0 Allowable Power Dissipation, PD -- W 10 7 5 1.0 0 ASO 5 VDS=10V ID=5.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 n( 0m ms s Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13854 When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13855 No. A1264-4/7 MCH6421 Taping Specification MCH6421-TL-E No. A1264-5/7 MCH6421 Outline Drawing MCH6421-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1264-6/7 MCH6421 Note on usage : Since the MCH6421 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1264-7/7