SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com -11 AMP P-Channel POWER MOSFET DESIGNER’S DATA SHEET 1/ Part Number / Ordering Information SFF9130 __ __ __ │ └ │ Screening2/ │ │ __ = Not Screened TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ Lead Option └ │ __ = Straight Leads │ DB = Down Bend │ UB = Up Bend │ Package └ M = TO-254 Z = TO-254Z 100 Volts 0.30 Ω typical Features: Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available Replaces IRF9130 Types Maximum Ratings3/ Symbol Value Units Drain – Source Voltage VDS -100 V Gate – Source Voltage VGS +20 V ID -11 -7 A TOP & TSTG -55 to +150 ºC RJC 2 ºC/W PD 63 48 Watts Single Pulse Avalanche Energy EAS 81 mJ Repetitive Avalanche Energy EAR 7.5 mJ Continuous Drain Current TC = 25ºC TC = 100ºC Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Power Dissipation TC = 25ºC TC = -55ºC NOTES: TO-254 (M) TO-254Z (Z) *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25oC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0025E DOC SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics3/ Drain to Source Breakdown Voltage (VGS = 0V, ID = 1mA) Temperature Coefficient of Breakdown Voltage Drain to Source On State Resistance (VGS = -10V) Gate Threshold Voltage (VDS = VGS, ID = -250A) Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDS = 7A) Zero Gate Voltage Drain Current (VDS = 80% max rated voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA=125°C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ID=7A ID=11A Symbol Min Typ Max Units BVDSS -100 –– –– V ∆BVDSS ∆Tj –– 87 –– mV/°C RDS(on) –– –– –– –– 0.30 0.35 Ω VGS(th) -2.0 –– -4.0 V gfs 3.0 5.0 –– S(Ʊ) IDSS –– –– –– –– -25 250 A –– –– 26 3 14 15 10 30 12 -100 100 29 9.5 21 60 140 140 140 At Rated VGS IGSS VGS = -10V 50% rated VDS ID = -11A VDD = 50% Rated VDS ID = 11 A RG = 7.5Ω IS = Rated ID VGS = 0V TJ = 25ºC TJ = 25ºC IF = 10A di/dt = 100A/µsec VGS = 0V VDS = -25V f = 1 MHz Qg Qgs Qgd t(on) tr td(off) tr –– –– 15 1 2 –– –– –– –– VSD –– –– -4.7 V trr Qrr –– –– 125 –– 250 3 nsec µC Ciss Coss Crss –– –– –– 860 350 125 –– –– –– pF NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0025E nA nC nsec DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com PACKAGE OUTLINE: TO-254 (M) SFF9130M SFF9130Z PACKAGE OUTLINE: TO-254Z (Z) Available with glass or ceramic seals – contact factory for details. Available Part Numbers: SFF9130M, SFF9130MUB, SFF9130MDB, SFF9130Z, SFF9130ZUB, SFF9130ZDB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) DATA SHEET #: FP0025E DOC