ON MBT6429DW1T1 Amplifier transistor Datasheet

MBT6429DW1T1
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS
Rating
(3)
Symbol
6429DW1T1
Unit
Collector −Emitter Voltage
VCEO
45
Vdc
Collector −Base Voltage
VCBO
55
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Collector Current − Continuous
(4)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation (Note 1)
TA = 25°C
PD
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
Junction and Storage Temperature
(2)
Max
(1)
(5)
(6)
Unit
mW
MARKING
DIAGRAM
833
°C/W
6
−55 to +150
°C
150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended foot print.
1
SC−88 (SOT−363)
419B
1Td
1
1T
d
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MBT6429DW1T1
SC−88
3000 /
Tape & Reel
SC−88
(Pb−Free)
3000 /
Tape & Reel
MBT6429DW1T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 1
1
Publication Order Number:
MBT6429DW1T1/D
MBT6429DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
45
−
55
−
−
0.1
−
0.01
−
0.01
500
500
500
500
−
1250
−
−
−
−
0.2
0.6
0.56
0.66
100
700
−
3.0
−
8.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Adc
Adc
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MHz
pF
pF
MBT6429DW1T1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
16
3.0
3.0 mA
1.0 mA
1.0
0.7
0.5
300 A
100 A
0.3
0.2
0.1
RS ≈ 0
10
20
10 A
50 100 200
5.0
10
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
100 A
100
70
50
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
16
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
10
Figure 6. Total Noise Voltage
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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3
h FE, DC CURRENT GAIN (NORMALIZED)
MBT6429DW1T1
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
1.0
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
RθVBE, BASE−EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
−0.4
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
−0.8
−1.2
TJ = 25°C to 125°C
−1.6
−2.0
−55 °C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
−2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100
Figure 10. Temperature Coefficients
50
100
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 9. “On” Voltages
20
Figure 11. Capacitance
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current−Gain − Bandwidth Product
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4
MBT6429DW1T1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE 02U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
6
5
DIM
A
B
C
D
G
H
J
K
N
S
4
−B−
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MBT6429DW1T1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBT6429DW1T1/D
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