ASI AM1011-500 Npn rf power transistor Datasheet

AM1011-500
NPN RF POWER TRANSISTOR
PACKAGE STYLE 400 X 600 2L FLG
DESCRIPTION:
The ASI AM1011-500 is a Common
Base Device Designed for Pulsed LBand Radar Amplifier Applications.
FEATURES INCLUDE:
A
B
C
D
E
F
G
H
I
J
K
L
• Input/Output Matching
• Gold Metallization
• Hermetic Metal/Ceramic Package
MAXIMUM RATINGS
IC
27 A
VCBO
55 V
PDISS
1360 W @ TC = 25 C
TJ
-65 C to+200 C
TSTG
-65 C to+200 C
θJC
0.11 C/W
MINIMUM
MAXIMUM
Inches/m
Inches/mm
m
.195/4.95
.205/5.21
.130/3.30
.380/9.65
.390/9.91
.570/14.48
.593/15.06
.607/15.42
.790/20.07
.810/20.57
.995/25.27 1.005/25.53
.002/0.05
.006/0.15
.055/1.40
.065/1.65
.110/2.79
.130/3.30
.230/5.84
.393/9.98
.407/10.34
O
O
O
O
O
O
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
70
V
BVCES
IC = 50 mA
70
V
ICES
VCE = 50 V
BVEBO
IE = 30 mA
hFE
VCE = 5.0 V
PG
ηC
POUT = 500 W
f = 1090 MHz
VCE = 50 V
Pulse Width = 32 µS
Duty Cycle = 2%
40
V
3.0
IC = 1.0 A
10
8.5
40
200
8.5
35
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
--dB
%
REV. A
1/1
Similar pages