CM300DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT S-Series Module 300 Amperes/1200 Volts A D F G2 B M F K L G E2 E H N P E1 C2E1 E2 C1 H G G1 J Q S R (4 PLACES) T T U Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. V NUTS (3 PLACES) W W Q X W Q X Y (TAB #110) X Z C LABEL AA G2 E2 (Es2) Tr2 E2 C2E1 Di1 Di2 Tr2 C1 E1 (Es1) G1 Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.25 108.0 P 0.79 20.0 B 2.44 62.0 Q 0.28 7.0 C 1.18+0.04/-0.02 30.0+1.0/-0.5 R D 3.66±0.01 93.0±0.25 S 0.85 21.5 E 1.89±0.01 48.0±0.25 T 0.98 25.0 7.5 U 0.94 24.0 F 0.29 0.26 Dia. 6.5 Dia. G 0.24 6.0 V H 0.59 15.0 W 0.71 18.0 M6 Metric M6 J 0.689 17.5 X 0.55 14.0 K 0.244 6.2 Y 0.02 0.5 L 0.16 4.0 Z 0.33 8.5 M 0.56 14.2 AA 0.87 22.2 N 1.18 30.0 11/12 Rev. 0 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300DY-24S is a 1200V (VCES), 300 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) VCES 1200 Volts Gate-Emitter Voltage (C-E Short-Circuited) VGES ±20 Volts Collector Current (DC, TC = 119°C)*2,*4 IC 300 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 600 Amperes Ptot 2270 Watts Total Power Dissipation (TC = 25°C)*2,*4 *1 300 Amperes IERM*1 600 Amperes VISO 2500 Volts Tj(max) 175 °C TC(max) 125 °C Tj(opr) -40 to +150 °C Tstg -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Maximum Junction Temperature Maximum Case Temperature*4 Operating Junction Temperature (Under Switching) 45.3 45.4 37.6 Tr2 Tr2 26.8 Di2 Di2 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 31.9 32.1 Storage Temperature 76.7 IE Emitter Current (Pulse, Repetitive)*3 65.9 Emitter Current*2 Di1 Tr1 42.2 42.1 Di1 Tr1 28.9 28.7 0 0 Tr1/Tr2: IGBT 2 Di1/Di2: FWDi LABEL SIDE 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, G-E Short-Circuited — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, C-E Short-Circuited — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.85 2.25 Volts (Terminal) IC = 300A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts IC = 300A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IC = 300A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts 150°C*5 — 1.95 — Volts — — 30 nF — — 6.0 nF — — 0.5 nF — 700 — nC — — 800 ns IC = 300A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, G-E Short-Circuited VCC = 600V, IC = 300A, VGE = 15V td(on) tr VCC = 600V, IC = 300A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns — — 300 ns VEC*1 tf IE = 300A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts (Terminal) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts IE = 300A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts VEC IE = 300A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts *1 IE = 300A, VGE = 0V, Tj = Reverse Recovery Time trr*1 — 1.70 — Volts VCC = 600V, IE = 300A, VGE = ±15V — — 300 ns *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon 150°C*5 RG = 0Ω, Inductive Load — 16 — µC VCC = 600V, IC = IE = 300A, — 41 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — 32 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 22 — mJ Main Terminals-Chip, — — 0.9 mΩ — 6.5 — Ω Internal Lead Resistance RCC' + EE' Per Switch,TC = 25°C*2 Internal Gate Resistance rg Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 11/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Case*4 Thermal Resistance, Junction to Case*4 Contact Thermal Resistance, Thermal Resistance, Junction to Test Conditions Min. Typ. Rth(j-c)Q Per IGBT — — 66 K/kW Rth(j-c)D Per IFWDi — — 120 K/kW Rth(c-s) Thermal Grease Applied 20 — K/kW Case to Heatsink*4 — Max. Units (Per 1/2 Module)*6 Mechanical Characteristics Characteristics Mounting Torque Symbol Test Conditions Min. Typ. Max. Units Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb — 400 — Grams — +100 µm Weight m Flatness of Baseplate ec On Centerline X, Y*7 -100 Recommended Operating Conditons, Ta = 25°C Gate (-Emitter Drive) Voltage External Gate Resistance Symbol Test Conditions Min. Typ. Max. Units VCC Applied Across C1-E2 — 600 850 Volts VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts RG Per Switch — 14 Ω BOTTOM 37.6 Tr2 Tr2 26.8 Di2 Di2 0 45.3 45.4 Y 31.9 32.1 – CONCAVE + CONVEX *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 0 76.7 (DC) Supply Voltage 65.9 Characteristics Di1 Tr1 42.2 42.1 Di1 Tr1 28.9 28.7 3 mm X 0 0 HEATSINK SIDE HEATSINK SIDE 4 – CONCAVE Tr1/Tr2: IGBT Di1/Di2: FWDi LABEL SIDE + CONVEX 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 600 3.5 12 13.5 15 400 11 300 200 10 100 9 Tj = 25°C 0 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 0 100 200 300 400 500 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) Tj = 25°C 8 IC = 600A 6 IC = 300A 4 IC = 120A 2 0 600 103 10 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 11/12 Rev. 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 500 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 20 Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 101 Coes 100 Cres 10-1 VGE = 0V 10-1 100 101 102 td(on) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 103 td(off) tf td(on) 102 101 101 104 td(on) VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) tr 102 tr 102 SWITCHING TIME, td(on), tr (ns) SWITCHING TIME, (ns) tr 103 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C 103 td(off) SWITCHING TIME, td(off), tf (ns) 10-2 6 tf td(off) SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) Cies tf Inductive Load 101 10-1 100 101 102 102 GATE RESISTANCE, RG, (Ω) 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 VCC = 600V VGE = ±15V IC = 300A Tj = 150°C tr 102 103 td(off) tf SWITCHING TIME, td(off), tf (ns) SWITCHING TIME, td(on), tr (ns) td(on) REVERSE RECOVERY, Irr (A), trr (ns) 103 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr Inductive Load 101 10-1 100 101 102 102 101 101 103 GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 103 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 20 102 11/12 Rev. 0 102 VCC = 600V IC = 300A Tj = 25°C 15 10 5 0 0 200 400 600 800 1000 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Eon Eoff Err 100 101 102 103 100 101 102 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V IC/IE = 300A Tj = 125°C Eon Eoff Err 10-1 100 101 GATE RESISTANCE, RG, (Ω) 8 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Eon Eoff Err COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 100 10-2 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 101 102 102 101 100 10-2 VCC = 600V VGE = ±15V IC/IE = 300A Tj = 150°C Eon Eoff Err 10-1 100 101 102 GATE RESISTANCE, RG, (Ω) 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM300DY-24S Dual IGBT S-Series Module 300 Amperes/1200 Volts 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 66 K/kW (IGBT) Rth(j-c) = 120 K/kW (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 11/12 Rev. 0 9