B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier FEATURES + • Ideal for printed circuit boards ~ • High case dielectric strength ~ e4 • High surge current capability ~ + − ~ • Typical IR less than 0.1 μA − • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style WOG • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS Package TYPICAL APPLICATIONS WOG IF(AV) 0.9 A VRRM 65 V, 125 V, 200 V, 400 V, 600 V IFSM 45 A IR 10 μA VF at IF = 0.9 A 1.0 V TJ max. 125 °C Diode variations Quad General purpose use in AC/DC bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers, and home appliances applications. MECHANICAL DATA Case: WOG Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated J-STD-002 and JESD22-B102 leads, solderable per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL B40 C800G B80 C800G B125 C800G B250 C800G B380 C800G UNIT Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V Maximum RMS input voltage R- and C-load VRMS 40 80 125 250 380 V PARAMETER Maximum average forward output current for free air operation at TA = 45 °C R- and L-load C-load Maximum non-repetitive peak voltage 0.9 IF(AV) VRSM A 0.8 100 200 350 600 1000 V Maximum DC blocking voltage VDC 65 125 200 400 600 V Maximum peak working voltage VRWM 90 180 300 600 900 V Maximum repetitive peak forward surge current IFRM 10 Peak forward surge current single sine-wave on rated load IFSM 45 A I2t 10 A2s Rating for fusing at TJ = 125 °C (t < 100 ms) Minimum series resistor C-load at VRMS = ± 10 % + 50 % - 10 % Maximum load capacitance Operating junction temperature range Storage temperature range A RT 1.0 2.0 4.0 8.0 12 CL 5000 2500 1000 500 200 μF TJ - 40 to + 125 °C TSTG - 40 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode 0.9 A Maximum reverse current at rated repetitive peak voltage per diode Revision: 08-Jul-13 SYMBOL B40 C800G B80 C800G B125 C800G B250 C800G B380 C800G UNIT VF 1.0 V IR 10 μA Document Number: 88534 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) B40 C800G B80 C800G B125 C800G RJA 36 RJL 11 B250 C800G B380 C800G UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22" (5.5 mm x 5.5 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B380C800G-E4/51 1.12 51 100 Plastic bag RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 50 to 60 Hz Resistive or Inductive Load 0.8 0 - 10 µF 10 - 100 µF > 100 µF Capacitive Load 0.6 0.4 P.C.B. 0.375" (9.5 mm) 0.2 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) Peak Forward Surge Current (A) Bridge Output Full Wave Rectified Current Average (A) 1.0 40 30 20 10 1.0 Cycle 0 0 0 20 40 60 80 100 120 140 100 10 1 Ambient Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Derating Curves Output Rectified Current for B40C800G...B125C800G Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge Current (A) 1.0 Bridge Output Full Wave Rectified Current Average (A) TJ = 25 °C 10 ms Single Sine-Wave 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0 - 10 µF 10 - 100 µF > 100 µF 0.6 0.4 P.C.B. 0.375" (9.5 mm) 0.2 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) 0 0 20 40 60 80 100 120 140 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Derating Curves Output Rectified Current for B250C800G...B380C800G Fig. 4 - Typical Forward Characteristics Per Diode Revision: 08-Jul-13 Document Number: 88534 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors 100 1 Junction Capacitance (pF) Instantaneous Reverse Current (µA) 10 TJ = 100 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = 25 °C 1 0.1 0.01 0 20 40 60 80 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style WOG 0.388 (9.86) 0.348 (8.84) 0.220 (5.6) 0.160 (4.1) 1.0 (25.4) MIN. 0.032 (0.81) 0.028 (0.71) 0.348 (8.84) 0.308 (7.82) 0.060 (1.52) 0.020 (0.51) 0.220 (5.6) 0.180 (4.6) 0.220 (5.6) 0.180 (4.6) Revision: 08-Jul-13 Document Number: 88534 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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