SEMICONDUCTOR E30A23VS, E30A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 ·Zener Voltage : 23V(Typ.) D1 ·Average Forward Current : IO=30A. (- Type) E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM 300(50Hz) A IRSM 30 A Transient Peak Reverse Voltage VRSM 17 V Peak Reverse Voltage VRM 17 V Junction Temperature Tj -40～190 ℃ Tstg -40～150 ℃ Repetitive Peak Reverse Surge Current Storage Temperature Range DIM A1 A2 A3 B1 B2 C1 C2 D1 G F MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T C2 (+ Type) C1 E30A23VR H E30A23VS T POLARITY MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.2 V Zener Voltage VZ IZ=10mA 20 23 26 V Repetitive Peak Reverse Current IRRM VR=VRM - - 10 μA Transient Thermal Resistance ΔVF IFM=100A - - 100 mV HIR Ta=150℃, VR=VRM - - 2.5 mA - - 1.5 μS - - 1.0 ℃/W Reverse Leakage Current Under High Temperature trr Reverse Recovery Time Rth Temperature Resistance 2007. 6. 26 Revision No : 1 IF=100mA, -IR=100mA, 90% Recovery Point DC total junction to case 1/2 I F - VF FORWARD CURRENT I F (A) 1000 100 10 1 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE V F (V) 2007. 6. 26 Revision No : 2 1.2 AVERAGE FORWARD CURRENT I F(AV) (A) E30A23VS, E30A23VR I F(AV) - Ta 40 Ta=Tc 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 2/2