To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1 0.65 –0.15 0.4 +0.1 –0.05 FEATURES 3 1.5 2.8 ±0.2 • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A) • Low input capacitance Ciss = 145 pF TYP. 0 to 0.1 1 2 0.95 0.65 0.95 1.9 • Small and surface mount package (SC-96) • Built-in gate protection diode 2.9 ±0.2 0.9 to 1.1 1. Gate 2. Source 3. Drain ORDERING INFORMATION PART NUMBER PACKAGE N2500N-T1B-AT Note N2500N-T2B-AT Note SC-96 (Mini Mold Thin Type) Note Pb-free (This product does not contain Pb in the external electrode and other parts.) Marking: YA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg EQUIVALENT CIRCUIT 250 ±12 ±0.5 ±2.0 0.2 1.25 150 −55 to +150 V V A A W W °C °C Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19677EJ1V1DS00 (1st edition) Date Published October 2009 NS Printed in Japan 2009 N2500N ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 0.25 A 0.8 RDS(on)1 VGS = 4.5 V, ID = 0.25 A 4.2 5.8 Ω RDS(on)2 VGS = 2.5 V, ID = 0.25 A 4.3 6.6 Ω Input Capacitance Ciss VDS = 10 V, 145 pF Output Capacitance Coss VGS = 0 V, 17 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 5 pF Turn-on Delay Time td(on) VDD = 125 V, ID = 0.25 A, 7 ns Rise Time tr VGS = 4.5 V, 12 ns Turn-off Delay Time td(off) RG = 10 Ω 22 ns Fall Time tf 35 ns Total Gate Charge QG VDD = 200 V, 4.7 nC Gate to Source Charge QGS VGS = 4.5 V, 0.4 nC QGD ID = 0.5 A 2.5 nC VF(S-D) IF = 0.5 A, VGS = 0 V 0.82 Reverse Recovery Time trr IF = 0.5 A, VGS = 0 V, 45 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 36 nC Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 1.0 S 1.5 V Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 μs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet D19677EJ1V1DS N2500N TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 1.4 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.2 1 0.8 0.6 0.4 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec 0.2 0 0 0 20 40 60 80 100 120 140 160 0 20 TC - Case Temperature - °C 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 10 ID(pulse) PW 1 0.1 R D o S( n) G 1i 0 is si 0.01 0.1 1 d it e im nL 0.001 t io pa Single Pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt 0 μs 1 ms D er (V d it e m ) Li 5 V 4. = S = w Po 10 10 ms 30 ms 1i 00 m s i 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt 10 1 Single Pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19677EJ1V1DS 3 N2500N DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 10 1.6 1 1.2 2.5 V 2.0 V 0.8 0.4 0 0.1 Tch = 150°C 125°C 75°C 25°C −25°C −55°C 0.01 0.001 0.0001 0 2 4 6 8 0 10 1 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 VDS = 10 V ID = 1.0 mA 2 1 0 -25 25 75 125 175 10 Tch = −55°C −25°C 25°C 1 75°C 125°C 150°C 0.1 0.01 6 VGS = 2.0 V 4 2.5 V 4.5 V 2 Pulsed 0.1 1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 8 0.01 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.001 VDS = 10 V Pulsed 0.1 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω 3 VGS - Gate to Source Voltage - V -75 ID - Drain Current - A 4 2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V Pulsed VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A Pulsed 12 10 8 ID = 0.5 A 0.25 A 6 0.05 A 4 2 Pulsed 0 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet D19677EJ1V1DS 10 N2500N CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 12 ID = 0.25 A Pulsed 2.0 V 8 2.5 V 6 VGS = 4.5 V 4 2 0 -75 25 75 125 1 Crss VGS = 0 V f = 1.0 MHz 175 0.1 1 10 100 1000 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 6 240 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns Coss 10 0.1 -25 100 tf td(off) 10 tr td(on) VDD = 125 V VGS = 4.5 V RG = 10 Ω 1 VDD = 200 V 125 V 50 V 200 5 4 160 3 120 VGS 2 80 40 1 VDS ID = 0.5 A 0 0 0.1 1 0 10 1 2 3 4 5 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 10 6 1000 1 VGS = 4.5 V 0.1 0V 0.01 Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Ciss 100 VGS - Gate to Source Voltage - V 10 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 10 0.001 VGS = 0 V di/dt = 100 A/μs 1 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet D19677EJ1V1DS 0.1 1 10 IF - Diode Forward Current - A 5 N2500N • The information in this document is current as of October, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti- "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and crime systems, safety equipment and medical equipment (not specifically designed for life support). medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). (M8E0909E)