CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A Features 100V 48A 10.6A 10 mΩ(typ) Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol Outline MTE011N10RJ3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device MTE011N10RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE011N10RJ3 CYStek Product Specification Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 4) Continuous Drain Current @TA=70C, VGS=10V (Note 4) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 5) Single Pulse Avalanche Energy @ L=0.5mH, ID=40 Amps, VDD=50V (Note 5) TC=25C (Note 1) TC=100C (Note 1) Power Dissipation TA=25C (Note 2) TA=70C (Note 2) Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 100 ±20 48 34 10.6 8.5 192 40 EAS 400 ID IDSM PD PDSM Tj, Tstg 60 30 2.5 1.6 -55~+175 Unit V A mJ W C/W *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note2) 50 C/W RθJA Thermal Resistance, Junction-to-ambient, max (Note4) 110 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V. MTE011N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 3/ 9 Characteristics (Tj=25C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit 100 2.0 - 74 14.5 10 4.0 ±100 1 5 13 V mV/C V S nA 42 13 11.9 26.8 21.6 50 10.8 2442 294 21 - 0.86 37 60 48 192 1.2 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Test Conditions mΩ VGS=0V, ID=250μA Reference to 25C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55C VGS =10V, ID=11A nC VDD=50V, ID=22A,VGS=10V ns VDD=50V, ID=11A, VGS=10V, RG=4.7Ω pF VGS=0V, VDS=30V, f=1MHz μA A V ns nC IS=22A, VGS=0V VGS=0V, IF=22A, dIF/dt=100A/μs *Pulse Test : Pulse Width 300μs, Duty Cycle2% MTE011N10RJ3 CYStek Product Specification Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 80 ID, Drain Current (A) 70 60 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V 7V 50 40 30 6V 20 VGS=5V 10 1.2 1 0.8 0.6 5.5V ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=6V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 10 12 14 16 IDR, Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.4 ID=11A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 400 300 200 100 2 VGS=10V, ID=11A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 10mΩ typ. 0 0 0 MTE011N10RJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 Coss 100 Crss 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VDS=20V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Ta=25°C Pulsed 0.01 0.001 8 VDS=50V 6 VDS=80V 4 2 ID=22A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 35 40 45 50 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 60 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 RDSON Limited 100 100μs 1ms 10 10ms 100ms 1 TC=25°C, Tj=175°C VGS=10V, RθJC=2.5°C/W Single Pulse 1s DC 50 40 30 20 Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W Single Pulse 10 0 0.1 0.1 MTE011N10RJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 80 TJ(MAX) =175°C TC=25°C RθJC=2.5°C/W 1600 60 1400 Power (W) ID, Drain Current(A) 1800 VDS=10V 70 50 40 30 1200 1000 800 600 20 400 10 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 0.001 0.01 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE011N10RJ3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTE011N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE011N10RJ3 CYStek Product Specification Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 E011 N10R Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead : Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE011N10RJ3 CYStek Product Specification