Freescale MMG3005NT1 Heterojunction bipolar transistor technology (ingap hbt) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MMG3005NT1
Rev. 1, 11/2005
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3005NT1
Broadband High Linearity Amplifier
The MMG3005NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small -signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 800 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small -signal RF.
800 -2200 MHz, 15 dB
30 dBm
InGaP HBT
Features
• Frequency: 800 -2200 MHz
• P1dB: 30 dBm @ 2140 MHz
• Small-Signal Gain: 15 dB @ 2140 MHz
• Third Order Output Intercept Point: 47 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Pb -Free Leads. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1543-02
PQFN 5x5
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Table 2. Maximum Ratings
Symbol
900
MHz
1960
MHz
2140
MHz
Unit
Small-Signal Gain
(S21)
Gp
18.5
15.5
15
dB
Input Return Loss
(S11)
IRL
-14
-10
-11
dB
Output Return Loss
(S22)
ORL
Power Output @1dB
Compression
P1db
30
30
30
dBm
IP3
47
47
47
dBm
Third Order Output
Intercept Point
-12
-7
-7
dB
Rating
Symbol
Value
Unit
Supply Voltage (2)
VDC
6
V
Supply Current (2)
IDC
600
mA
RF Input Power
Pin
18
dBm
Tstg
-65 to +150
°C
TJ
150
°C
Storage Temperature Range
Junction Temperature
(3)
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
1. VDC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 480 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (4)
Unit
RθJC
21.5
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3005NT1
1
Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small-Signal Gain (S21)
Characteristic
Gp
14
15
—
dB
Input Return Loss (S11)
IRL
—
-11
—
dB
Output Return Loss (S22)
ORL
—
-7
—
dB
Power Output @ 1dB Compression
P1dB
—
30
—
dBm
Third Order Output Intercept Point
IP3
—
47
—
dBm
Noise Figure
NF
—
5
—
dB
Supply Current (1)
IDC
455
480
520
mA
Supply Voltage (1)
VDC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3005NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Name
Pin
Number
Description
RFin
3, 4
RF input for the power amplifier. This pin is DC-coupled and
requires a DC-blocking series capacitor.
RFOUT/
VCC
10, 11, 12
VCC
VBA
RF output for the power amplifier. This pin is DC-coupled
and requires a DC-blocking series capacitor.
14
Collector voltage supply.
VBA
16
Bias voltage supply.
GND
Backside
Center
Metal
The center metal base of the PQFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
1
16
VCC
15
14
13
2
12
RFout
RFin
3
11
RFout
RFin
4
10
RFout
5
6
7
8
9
(Top View)
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
1A (Minimum)
Machine Model (per EIA/JESD 22-A115)
A (Minimum)
Charge Device Model (per JESD 22-C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
3
260
°C
MMG3005NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
106
480
MTTF (YEARS)
ICC, COLLECTOR CURRENT (mA)
600
360
240
105
104
120
VCC = 5 Vdc
103
0
0
1
2
3
4
5
VBA, BIAS VOLTAGE (V)
Figure 2. Collector Current versus Bias Voltage
120
125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 480 mA
Figure 3. MTTF versus Junction Temperature
MMG3005NT1
4
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 900 MHz
VSUPPLY
R2
R1
C3
C4
C5
1
RF
INPUT
16
Z2
14
Current Mirror
2
Z1
15
C7
12
Z4
Z5
Z6
Z7
RF
OUTPUT
11
DUT
4
5
Z1, Z7
Z2, Z6
Z3
L1
Z3
3
C1
13
C6
6
7
C8
10
8
0.140″ x 0.028″ Microstrip
0.057″ x 0.028″ Microstrip
0.342″ x 0.028″ Microstrip
C2
9
Z4
Z5
PCB
0.119″ x 0.028″ Microstrip
0.223″ x 0.028″ Microstrip
Isola FR408, 0.014″, εr = 3.7
Figure 4. 50 Ohm Test Circuit Schematic
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C5
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4, C6
0.1 µF Chip Capacitors
0603A102JAT2A
AVX
C7
6.8 pF Chip Capacitor
06035J6R8BBT
AVX
C8
5.6 pF Chip Capacitor
06035J5R6BBT
AVX
L1
15 nH Chip Inductor
1008CS-150XJB
Coilcraft
R1
33 W Chip Resistor
R2
0 W Chip Resistor
MMG3005NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 900 MHz
Vp
VCC
R2
R1
C3
C5
C6
C4
L1
RFin
C1
C7
RFout
C8
C2
MMG3004/5/6 Rev 3
Figure 5. 50 Ohm Test Circuit Component Layout
MMG3005NT1
6
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
−10
TC = −40°C
19
18
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL−SIGNAL GAIN (dB)
20
85°C
25°C
17
16
−11
−12
85°C
−13
−14
VDC = 5 Vdc
15
840
VDC = 5 Vdc
870
900
930
−15
840
960
930
Figure 6. Small -Signal Gain (S21) versus
Frequency
Figure 7. Input Return Loss (S11) versus
Frequency
960
P1dB, 1 dB COMPRESSION POINT (dBm)
32
−7
−9
TC = −40°C
−11
−13
25°C
−15
840
85°C
870
900
930
31
TC = −40°C
30
85°C
25°C
29
VDC = 5 Vdc
28
840
960
870
900
930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Output Return Loss (S22) versus
Frequency
Figure 9. P1dB versus Frequency
50
960
10
TC = −40°C
48
8
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
900
f, FREQUENCY (MHz)
VDC = 5 Vdc
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
870
f, FREQUENCY (MHz)
−5
25°C
46
85°C
44
TC = 85°C
6
−40°C
4
25°C
2
42
VDC = 5 Vdc
1 MHz Tone Spacing
40
840
TC = −40°C
25°C
870
VDC = 5 Vdc
900
930
960
0
840
870
900
930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 10. Third Order Output Intercept
Point versus Frequency
Figure 11. Noise Figure versus Frequency
960
MMG3005NT1
RF Device Data
Freescale Semiconductor
7
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
−35
VDC = 5 Vdc
IDC = 480 mA
f = 900 MHz
Single−Carrier IS−95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−45
TC = −40°C
25°C
−50
85°C
−55
24
25
26
27
28
29
VDC = 5 Vdc
IDC = 480 mA
f = 900 MHz
Single−Carrier IS−95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−50
−60
TC = 85°C
−70
25°C
−80
19
−40°C
21
23
25
27
29
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 12. IS -95 Adjacent Channel Power Ratio
versus Output Power
Figure 13. IS -95 Adjacent Channel Power Ratio
versus Output Power
MMG3005NT1
8
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1800-2200 MHz
VSUPPLY
R2
R1
C3
C4
C5
1
RF
INPUT
16
Z2
14
Current Mirror
2
Z1
15
C7
Z4
Z5
Z6
Z7
RF
OUTPUT
11
DUT
4
5
Z1, Z7
Z2
Z3
Z4
L1
12
Z3
3
C1
13
C6
6
7
10
8
0.140″ x 0.028″ Microstrip
0.269″ x 0.028″ Microstrip
0.130″ x 0.028″ Microstrip
0.044″ x 0.028″ Microstrip
C2
C8
9
Z5
Z6
PCB
0.075″ x 0.028″ Microstrip
0.280″ x 0.028″ Microstrip
Isola FR408, 0.014″, εr = 3.7
Figure 14. 50 Ohm Test Circuit Schematic
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
15 pF Chip Capacitor
ECUV1H150JCV
Panasonic
C2
1.8 pF Chip Capacitor
06035J1R8BBT
AVX
C3, C5
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4, C6
0.1 µF Chip Capacitors
0603A102JAT2A
AVX
C7
2.7 pF Chip Capacitor
06035J2R7BBT
AVX
C8
1.2 pF Chip Capacitor
06035J1R2BBT
AVX
L1
15 nH Chip Inductor
1008CS-150XJB
Coilcraft
R1
33 W Chip Resistor
R2
0 W Chip Resistor
MMG3005NT1
RF Device Data
Freescale Semiconductor
9
50 OHM APPLICATION CIRCUIT: 1800-2200 MHz
Vp
VCC
R2
R1
C5
C6
C3
C4
L1
RFin
C1
C7
C8
RFout
C2
MMG3004/5/6 Rev 3
Figure 15. 50 Ohm Test Circuit Component Layout
MMG3005NT1
10
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 1800-2200 MHz
−5
17
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL−SIGNAL GAIN (dB)
18
TC = −40°C
16
15
85°C
25°C
14
13
TC = −40°C
−10
25°C
85°C
−15
VDC = 5 Vdc
VDC = 5 Vdc
12
1900
1960
2020
2080
2140
−20
1900
2200
f, FREQUENCY (MHz)
2020
2080
f, FREQUENCY (MHz)
Figure 16. Small -Signal Gain (S21) versus
Frequency
Figure 17. Input Return Loss (S11) versus
Frequency
−2
−4
−6
TC = −40°C
−8
85°C
VDC = 5 Vdc
1960
2020
2080
25°C
2140
TC = −40°C
25°C
30
85°C
29
VDC = 5 Vdc
1960
2020
2080
2140
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 18. Output Return Loss (S22) versus
Frequency
Figure 19. P1dB versus Frequency
50
2200
10
8
TC = −40°C
25°C
46
85°C
44
6
TC = 85°C
4
−40°C
25°C
2
42
VDC = 5 Vdc
1 MHz Tone Spacing
40
1900
2200
31
28
1900
2200
NF, NOISE FIGURE (dB)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
−10
1900
48
2140
32
P1dB, 1 dB COMPRESSION POINT (dBm)
ORL, OUTPUT RETURN LOSS (dB)
0
1960
1960
VDC = 5 Vdc
2020
2080
2140
2200
0
1900
1960
2020
2080
2140
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept
Point versus Frequency
Figure 21. Noise Figure versus Frequency
2200
MMG3005NT1
RF Device Data
Freescale Semiconductor
11
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−35
VDC = 5 Vdc
IDC = 480 mA
f = 1960 MHz
Single−Carrier IS−95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−45
25°C
TC = 85°C
−40°C
−50
−55
24
25
26
27
28
29
VDC = 5 Vdc
IDC = 480 mA
f = 1960 MHz
Single−Carrier IS−95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−50
−60
TC = 85°C
−70
25°C
−40°C
−80
19
21
23
25
27
29
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 22. IS -95 Adjacent Channel Power Ratio
versus Output Power
Figure 23. IS -95 Adjacent Channel Power Ratio
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 1800-2200 MHz
−20
−30
TC = 85°C
−40
25°C
−40°C
−50
−60
VDC = 5 Vdc, IDC = 480 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−70
18
20
22
24
26
28
Pout, OUTPUT POWER (dBm)
Figure 24. Single -Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3005NT1
12
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VDC = 5 Vdc, IDC = 480 mA, TC = 255C
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.25
0.70575
-173.81
5.06022
143.91
0.00976
-49.75
0.84913
174.65
0.3
0.73140
-174.91
4.79122
137.40
0.00866
-46.60
0.84273
173.16
0.35
0.75442
-176.26
4.52885
131.51
0.00773
-43.76
0.83759
172.12
0.4
0.77553
-177.67
4.27831
126.11
0.00689
-40.58
0.83409
171.28
0.45
0.79364
-179.04
4.03762
121.18
0.00618
-36.61
0.83042
170.63
0.5
0.80933
179.58
3.82617
116.75
0.00565
-31.68
0.83214
170.43
0.55
0.82301
178.27
3.62033
112.46
0.00523
-26.34
0.83079
169.99
0.6
0.83429
177.07
3.43310
108.55
0.00494
-20.59
0.82956
169.83
0.65
0.84357
175.98
3.26377
104.82
0.00478
-15.13
0.82812
169.78
0.7
0.85132
174.99
3.10735
101.29
0.00468
-10.28
0.82590
169.86
0.75
0.85696
174.16
2.96322
97.96
0.00459
-5.76
0.82489
170.15
0.8
0.86176
173.35
2.82568
94.86
0.00454
-1.51
0.82589
170.57
0.85
0.86572
172.60
2.70160
92.31
0.00452
3.52
0.82783
171.07
0.9
0.86813
171.85
2.60468
90.11
0.00455
7.99
0.83010
171.50
0.95
0.86945
171.15
2.53732
88.04
0.00475
12.64
0.83192
172.00
1
0.86974
170.42
2.48944
85.86
0.00498
15.23
0.83202
172.45
1.05
0.86842
169.66
2.45821
83.61
0.00517
16.96
0.83128
172.96
1.1
0.86533
168.91
2.44429
81.27
0.00537
18.37
0.82923
173.50
1.15
0.86095
168.14
2.44811
78.81
0.00562
19.48
0.82679
174.01
1.2
0.85480
167.25
2.46595
76.18
0.00589
19.73
0.82313
174.63
1.25
0.84684
166.25
2.49650
73.39
0.00614
19.47
0.81800
175.29
1.3
0.83707
165.18
2.54318
70.39
0.00639
18.66
0.81154
176.08
1.35
0.82469
164.00
2.60413
67.17
0.00664
17.14
0.80396
176.98
1.4
0.80971
162.76
2.68767
63.69
0.00686
15.10
0.79812
177.98
1.45
0.79087
161.42
2.79189
59.73
0.00707
12.45
0.79179
178.83
1.5
0.76847
160.03
2.91082
55.24
0.00723
8.99
0.78258
179.68
1.55
0.74126
158.60
3.04944
50.25
0.00735
4.62
0.77256
-179.28
1.6
0.70933
157.30
3.20126
44.67
0.00737
-0.89
0.76200
-178.18
1.65
0.67261
156.25
3.36356
38.42
0.00727
-7.59
0.75243
-176.93
1.7
0.63202
155.73
3.53052
31.45
0.00702
-15.85
0.74435
-175.63
1.75
0.59058
156.13
3.69596
23.72
0.00657
-25.99
0.73950
-174.33
1.8
0.55219
157.76
3.84647
15.21
0.00592
-38.78
0.73766
-173.25
1.85
0.53906
175.46
3.84639
5.98
0.00493
-55.47
0.74863
173.64
1.9
0.55077
-178.72
3.76728
-3.57
0.00394
-78.20
0.76239
172.14
1.95
0.58350
-174.08
3.61364
-13.31
0.00325
-110.26
0.77658
170.13
2
0.63044
-171.29
3.40538
-22.98
0.00325
-147.37
0.78891
167.72
2.05
0.68283
-170.32
3.15278
-32.28
0.00389
-177.72
0.79795
164.96
2.1
0.73327
-170.78
2.87824
-41.07
0.00480
161.34
0.80422
162.03
2.15
0.77875
-172.14
2.60183
-49.24
0.00576
146.52
0.80618
159.04
2.2
0.81666
-174.06
2.33461
-56.78
0.00658
135.49
0.80601
156.02
2.25
0.84807
-176.25
2.08577
-63.69
0.00728
126.95
0.80299
153.08
2.3
0.87279
-178.55
1.85911
-70.01
0.00782
120.20
0.79865
150.21
2.35
0.89261
179.07
1.65704
-75.82
0.00823
114.85
0.79341
147.45
2.4
0.90758
176.70
1.47812
-81.19
0.00851
110.74
0.78715
144.80
2.45
0.91984
174.31
1.32091
-86.22
0.00868
107.68
0.78067
142.25
MMG3005NT1
RF Device Data
Freescale Semiconductor
13
Table 10. Class A Common Emitter S -Parameters at VDC = 5 Vdc, IDC = 480 mA, TC = 255C (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.5
0.92917
171.99
1.18240
-90.93
0.00876
105.84
0.77298
139.76
2.55
0.93606
169.65
1.06136
-95.41
0.00878
105.17
0.76528
137.41
2.6
0.94249
167.38
0.95471
-99.69
0.00880
105.76
0.75557
135.15
2.65
0.94659
165.17
0.86109
-103.83
0.00882
107.70
0.74569
132.95
2.7
0.95002
163.00
0.77869
-107.89
0.00894
111.20
0.73387
130.86
2.75
0.95243
160.86
0.70576
-111.91
0.00932
116.13
0.72034
128.82
2.8
0.95418
158.70
0.64070
-115.96
0.01006
121.98
0.70405
126.97
2.85
0.95534
156.67
0.58229
-120.08
0.01141
127.95
0.68401
125.22
2.9
0.95570
154.64
0.52887
-124.40
0.01358
132.34
0.65990
123.77
2.95
0.95565
152.68
0.47907
-128.91
0.01662
134.33
0.63014
122.76
3
0.95487
150.86
0.43144
-133.65
0.02061
133.72
0.59605
122.51
MMG3005NT1
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RF Device Data
Freescale Semiconductor
2.2 x 2.2
1.35
0.6
2.6
5.3
0.8
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER
METAL GROUND LANDING PATTERN.
3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR
ADDITIONAL PQFN PCB GUIDELINES.
Figure 25. Recommended Mounting Configuration
MMG3005NT1
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Freescale Semiconductor
15
NOTES
MMG3005NT1
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NOTES
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NOTES
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PACKAGE DIMENSIONS
5
DETAIL G
PIN 1 INDEX
M
0.15 C
2X
5
2.5
M
0.15 C
B
0.1 C
2X
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF−PQFP−N.
4. COPLANARITY APPLIES TO LEADS AND DIE
ATTACH PAD.
5. MINIMUM METAL GAP SHOULD BE 0.25MM
2.20
1.95
2.2
2.0
16X
0.05 C
4
(0.55)
2.20
1.95
C
(0.8)
SEATING PLANE
DETAIL G
EXPOSED DIE
ATTACH PAD
2.2
1.8
0.1
1
14
VIEW ROTATED 90_ CLOCKWISE
M
DETAIL M
16
13
0.92
0.78
C A B
0.1 M C A B
0.05 M C
12X (0.05)
1
0.7 (0.2)
0.3
1
0.1
M
0.1 M C A B
0.05 M C
8X 0.8
2.2
1.8
5
9
C A B
12X 0.62
8
6
0.48
(0.2)
0.92
0.78
20X 1.20
0.95
12X 0.37
0.1 M C A B
0.05 M C
VIEW M - M
0.23
0.7
0.3
DETAIL M
CORNER CONFIGURATION
CASE 1543-02
ISSUE B
PQFN 5x5
PLASTIC
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19
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MMG3005NT1
Document Number: MMG3005NT1
Rev. 1, 11/2005
20
RF Device Data
Freescale Semiconductor