IXYS IXFN55N50 Hiperfet power mosfet Datasheet

IXFK 55N50
IXFX 55N50
IXFN 55N50
HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
t rr
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C
500
500
V
V
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
dv/dt
55
220
A
A
TC = 25°C
TC = 25°C
55
60
A
mJ
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
10
V/ns
625
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
PLUS247(IXFX)
G
(TAB)
C
G
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX)
Md
Mounting torque
Terminal leads
(IXFK, IXFX)
(IXFN)
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
(IXFN)
Weight
PLUS247
TO-264
SOT-227B
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
°C
300
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
t = 1minute
t=1s
2500
3000
V~
V~
5
10
30
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 1 mA
500
VGS(th)
VDS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
E
TO-264 AA (IXFK)
TJ ≤ 150°C, RG = 4 Ω
PD
= 500 V
= 55 A
Ω
= 90mΩ
≤ 250 ns
TJ = 125°C
V
4.5
V
±200
nA
25
2
µA
mA
90
mΩ
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• PLUS247 package for clip or spring
bar mounting
• Easy to mount
• Space savings
• High power density
DS97502G(11/04)
IXFK55N50
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ. Max.
VDS = 10 V; ID = 0.5 • ID25 Note 1
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
45
S
9400
pF
1280
pF
460
pF
45
ns
60
ns
120
ns
45
ns
330
nC
55
nC
155
nC
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
= 1 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
RthCK
0.20
IXFK, IXFX
0.15
0.05
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Dim.
Characteristic Values
Min. Typ. Max.
55
A
ISM
Repetitive;
pulse width limited by TJM
220
A
VSD
IF = 100 A, VGS = 0 V
1.5
V
250
ns
Note 1
t rr
IF = 25 A, -di/dt = 100 A/µs, VR = 100 V
IRM
1.0
µC
10
A
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
K/W
K/W
VGS = 0
QRM
TO-264 AA Outline
K/W
IS
IXFX55N50
IXFN55N50
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
miniBLOC (SOT-227B) Outline
M4 screws (4x) supplied
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim.
PLUS247 Outline
Terminals:
1 - Gate
2 - Collector
Millimeter
Min.
Max.
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Inches
Min.
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXFK55N50
100
VGS = 10V
9V
8V
7V
100
TJ = 125OC
80
ID - Amperes
TJ = 25OC
120
ID - Amperes
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
140
6V
80
60
40
5V
4
8
12
16
20
5V
40
24
0
4
8
12
RDS(on) normalized to 0.5
ID25 value vs. ID
2.8
2.2
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
VGS = 10V
TJ = 125OC
2.0
1.6
TJ = 25OC
1.2
0.8
0
20
40
60
80
100
2.0
VGS = 10V
ID = 55A
1.6
1.4
ID = 27.5A
1.2
1.0
25
120
50
IXF_50N50
20
-25
0
25
50
75
TC - Degrees C
© 2004 IXYS All rights reserved
125
150
Figure 6. Admittance Curves
TJ = 125oC
60
40
TJ = 25oC
20
10
-50
100
80
ID - Amperes
ID - Amperes
IXF_55N50
30
0
75
TJ - Degrees C
100
40
24
1.8
Figure 5. Drain Current vs. Case Temperature
50
20
Figure 4. RDS(on) normalized to 0.5
ID25 value vs. TJ
ID - Amperes
60
16
VDS - Volts
VDS - Volts
Figure 3.
6V
60
0
0
VGS = 10V
9V
8V
7V
20
20
0
IXFX55N50
IXFN55N50
100 125 150
0
3.0
3.5
4.0
4.5
VGS - Volts
5.0
5.5
6.0
IXFK55N50
Figure 7. Gate Charge
IXFX55N50
IXFN55N50
Figure 8. Capacitance Curves
12
10000
Ciss
10
Capacitance - pF
VDS = 250V
ID = 27.5A
VGS - Volts
8
6
4
f = 1MHz
Coss
1000
Crss
2
0
0
50
100
150
200
250
300
100
350
0
Gate Charge - nC
Figure 9.
5
10
15
20
25
30
35
40
VDS - Volts
Forward Voltage Drop of the
Intrinsic Diode
100
ID - Amperes
80
60
40
TJ = 125OC
20
TJ = 25OC
0
0.2
0.4
0.6
0.8
1.0
VSD - Volts
Figure 10. Transient Thermal Resistance
1.00
R(th)JC - K/W
IXFK55N50/IXFX55N50
0.10
IXFN55N50
0.01
0.00
10-4
10-3
10-2
10-1
Pulse Width - Seconds
100
101
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