IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR EAR dv/dt 55 220 A A TC = 25°C TC = 25°C 55 60 A mJ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns 625 W -55 ... +150 150 -55 ... +150 °C °C °C PLUS247(IXFX) G (TAB) C G TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX) Md Mounting torque Terminal leads (IXFK, IXFX) (IXFN) VISOL 50/60 Hz, RMS IISOL ≤ 1 mA (IXFN) Weight PLUS247 TO-264 SOT-227B D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G °C 300 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. t = 1minute t=1s 2500 3000 V~ V~ 5 10 30 g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 8 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved E TO-264 AA (IXFK) TJ ≤ 150°C, RG = 4 Ω PD = 500 V = 55 A Ω = 90mΩ ≤ 250 ns TJ = 125°C V 4.5 V ±200 nA 25 2 µA mA 90 mΩ S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Advantages • PLUS247 package for clip or spring bar mounting • Easy to mount • Space savings • High power density DS97502G(11/04) IXFK55N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 • ID25 Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 45 S 9400 pF 1280 pF 460 pF 45 ns 60 ns 120 ns 45 ns 330 nC 55 nC 155 nC td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK RthCK 0.20 IXFK, IXFX 0.15 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Dim. Characteristic Values Min. Typ. Max. 55 A ISM Repetitive; pulse width limited by TJM 220 A VSD IF = 100 A, VGS = 0 V 1.5 V 250 ns Note 1 t rr IF = 25 A, -di/dt = 100 A/µs, VR = 100 V IRM 1.0 µC 10 A Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T K/W K/W VGS = 0 QRM TO-264 AA Outline K/W IS IXFX55N50 IXFN55N50 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC (SOT-227B) Outline M4 screws (4x) supplied Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. PLUS247 Outline Terminals: 1 - Gate 2 - Collector Millimeter Min. Max. 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: Inches Min. 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFK55N50 100 VGS = 10V 9V 8V 7V 100 TJ = 125OC 80 ID - Amperes TJ = 25OC 120 ID - Amperes Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 140 6V 80 60 40 5V 4 8 12 16 20 5V 40 24 0 4 8 12 RDS(on) normalized to 0.5 ID25 value vs. ID 2.8 2.2 2.4 RDS(ON) - Normalized RDS(ON) - Normalized VGS = 10V TJ = 125OC 2.0 1.6 TJ = 25OC 1.2 0.8 0 20 40 60 80 100 2.0 VGS = 10V ID = 55A 1.6 1.4 ID = 27.5A 1.2 1.0 25 120 50 IXF_50N50 20 -25 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 125 150 Figure 6. Admittance Curves TJ = 125oC 60 40 TJ = 25oC 20 10 -50 100 80 ID - Amperes ID - Amperes IXF_55N50 30 0 75 TJ - Degrees C 100 40 24 1.8 Figure 5. Drain Current vs. Case Temperature 50 20 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ ID - Amperes 60 16 VDS - Volts VDS - Volts Figure 3. 6V 60 0 0 VGS = 10V 9V 8V 7V 20 20 0 IXFX55N50 IXFN55N50 100 125 150 0 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXFK55N50 Figure 7. Gate Charge IXFX55N50 IXFN55N50 Figure 8. Capacitance Curves 12 10000 Ciss 10 Capacitance - pF VDS = 250V ID = 27.5A VGS - Volts 8 6 4 f = 1MHz Coss 1000 Crss 2 0 0 50 100 150 200 250 300 100 350 0 Gate Charge - nC Figure 9. 5 10 15 20 25 30 35 40 VDS - Volts Forward Voltage Drop of the Intrinsic Diode 100 ID - Amperes 80 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Figure 10. Transient Thermal Resistance 1.00 R(th)JC - K/W IXFK55N50/IXFX55N50 0.10 IXFN55N50 0.01 0.00 10-4 10-3 10-2 10-1 Pulse Width - Seconds 100 101