Gulf BYV27-1GE Glass passivated junction ultrafast efficient silicon rectifier voltageï¼ 100 to 200v currentï¼ 2.0a Datasheet

BYV27-1GE THRU BYV27-2GE
GLASS PASSIVATED JUNCTION
ULTRAFAST EFFICIENT SILICON RECTIFIER
VOLTAGE:
:100 TO 200V
CURRENT:
: 2.0A
FEATURE
DO-15/DO-204AC
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL
BYV27-1GE
BYV27-2GE
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Vrrm
Vrms
Vdc
100
70
100
200
140
200
V
V
V
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =55℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
2.0A Peak
non-repetitive peak reverse avalanche energy
If(av)
2.0
A
Ifsm
50.0
A
Vf
0.98
V
Ersm
20
mJ
5.0
150.0
25
15
45
-55 to +150
μA
μA
(Note 1)
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operating Junction Temperature
Ir
(Note 2)
(Note 3)
(Note 4)
Trr
Cj
R(ja)
Tstg,Tj
nS
pF
℃/W
℃
Note: 1.L = 120 mH; Tj = Tj max prior to surge; inductive load switched off.
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES BYV27-1GE THRU BYV27-2GE
1
Rev.A1
www.gulfsemi.com
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