CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features • Single Drive Requirement • Low On-resistance • Pb-free lead plating package Applications • Synchronous rectifier for DC/DC converters • Telecom secondary side rectification • High end server/ work station Symbol Outline DFN3×3 MTN4410V8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTN4410V8 MTN4410V8 Package DFN3×3 (Pb-free lead plating package) Shipping Marking 3000 pcs / Tape & Reel 4410 CYStek Product Specification Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction-to-ambient, max Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area VDS VGS ID ID IDM PD Rth,j-a Tj, Tstg Limits 30 ±20 12 9.6 50 *1 2.5 0.02 50 -55~+150 Unit V V A A A W W/°C °C/W °C Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 30 ∆BVDSS/∆Tj VGS(th) 1.0 GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM - Typ. Max. Unit Test Conditions 0.02 1.6 20 9 14 3.0 ±100 1 25 13.5 20 V V/°C V S nA μA μA mΩ mΩ VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20 VDS =30V, VGS =0 VDS =24V, VGS =0, Tj=55°C VGS =10V, ID=10A VGS =4.5V, ID=6A 16 3.8 6.2 7.5 17 36 15 1119 124 105 - nC ID=10A, VDS=15V, VGS=5V ns VDS=25V, ID=1A, VGS=5V, RG=3.3Ω, RD=25Ω pF VGS=0V, VDS=15V, f=1MHz - 1.3 2.3 50 V A A IS=2.3A, VGS=0V VD=VG=0, VS=1.3V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4410V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 3/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 7V,8V,9V,10V ID, Drain Current (A) 80 6V 5V 60 4V 40 20 VGS=2V 40 BVDSS, Drain-Source Breakdown Voltage (V) 100 VGS=3V 38 36 34 32 ID=250μA, VGS=0V 30 0 0 1 2 3 4 -75 -50 -25 5 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=2.5V 100 VGS=3V VGS=4.5V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 30 R DS(on), Static Drain-Source On-State Resistance(mΩ) 200 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 180 160 140 120 100 80 60 ID=10A ID=6A 40 20 25 20 VGS=4.5V, ID=6A 15 10 VGS=10V, ID=10A 5 0 0 0 MTN4410V8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.2 VGS(th), Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss ID=250μA 2 1.8 1.6 1.4 1.2 1 0.8 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=5V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 10 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 8 VDS=10V VDS=15V 6 4 2 ID=10A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 100μs 1ms 10ms 100ms 1 DC TA=25°C, Tj=150°C VGS=10V, θJA=50°C/W Single Pulse MTN4410V8 40 25 20 15 10 5 VGS=10V 0 0.01 0.01 35 10μs 10 0.1 10 15 20 25 30 Qg, Total Gate Charge(nC) 30 RDSON Limited ID, Maximum Drain Current(A) 100 5 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 5/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 TJ(MAX) =150°C TA=25°C θJA=50°C/W Power (W) 40 30 20 10 0 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN4410V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 6/9 Recommended Soldering Footprint unit : mm MTN4410V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN4410V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN4410V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C397V8 Issued Date : 2012.03.14 Revised Date : 2012.03.15 Page No. : 9/9 DFN3×3 Dimension Marking: D D D D Date Code ● S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Inches Min. Max. 0.0276 0.0354 0.0000 0.0197 0.0094 0.0138 0.0039 0.0079 0.1280 0.1339 0.1201 0.1280 0.0945 0.1024 DIM A A1 b c D D1 D2 Millimeters Min. Max. 0.70 0.90 0.00 0.50 0.24 0.35 0.10 0.20 3.25 3.40 3.05 3.25 2.40 2.60 DIM E E1 e H L L1 L2 Inches Min. Max. 0.1181 0.1260 0.0531 0.0610 0.0256 BSC 0.1260 0.1339 0.0118 0.0197 0.0039 0.0079 0.0445 REF Millimeters Min. Max. 3.00 3.20 1.35 1.55 0.65 BSC 3.20 3.40 0.30 0.50 0.10 0.20 1.13 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4410V8 CYStek Product Specification