New Product BYS11-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, oring diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 1.5 A MECHANICAL DATA VRRM 90 V IFSM 40 A VF 0.75 V Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade TJ max. 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYS11-90 UNIT BYS109 Maximum repetitive peak reverse voltage VRRM 90 V Maximum average forward rectified current IF(AV) 1.5 A Peak forward surge current single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Junction and storage temperature range Document Number: 89409 Reivision: 19-Apr-11 40 8.3 ms 10 ms IFSM A 30 dV/dt 10 000 V/μs TJ, TSTG - 55 to + 150 °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BYS11-90 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current VRRM TJ = 25 °C TJ = 100 °C SYMBOL BYS11-90 UNIT VF (1) 750 mV 100 μA 1 mA BYS11-90 UNIT °C/W IR (1) Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient RJL 25 RJA (1) 150 RJA (2) 125 RJA (3) 100 °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS11-90-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYS11-90-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 2.0 1 0.1 TJ = 25 °C 0.01 VR = VRRM, Half Sine-Wave, RthJA = 25 K/W Average Forward Current (A) Forward Current (A) TJ = 150 °C 1.6 1.2 0.8 0.4 0 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 40 80 120 160 200 Forward Voltage (V) Ambient Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89409 [email protected], [email protected], [email protected] Reivision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BYS11-90 Vishay General Semiconductor 2.0 180 RthJA = 25 K/W 1.2 100 K/W 0.8 f = 1 MHz 160 1.6 Diode Capacitance (pF) Average Forward Current (A) VR = 0 V, Half Sine-Wave 125 K/W 0.4 150 K/W 140 120 100 80 60 40 20 0 0 0 40 80 120 160 200 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 Reverse Current (mA) VR = VRRM 100 10 1 0.1 0 40 80 120 160 200 Junction Temperature (°C) Fig. 4 - Reverse Current vs. Junction Temperature Max. Reverse Power Dissipation (W) 2.0 RthJA = 25 K/W 1.6 100 K/W 1.2 0.8 0.4 VR = VRRM 0 0 40 80 120 100 200 Junction Temperature (°C) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Document Number: 89409 Reivision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BYS11-90 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89409 [email protected], [email protected], [email protected] Reivision: 19-Apr-11 This document is subject to change without notice. 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