NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A BVDSS NEW PRODUCT Features and Benefits -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Load Switch for Portable Devices Top View Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.08 grams (Approximate) Internal Schematic Top View Ordering Information (Note 5) Part Number DMG2307L-7 DMG2307LQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3000Tape & Reel 3000Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information G24 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) Date Code Key Year Code 2009 W Month Code Jan 1 … … Feb 2 DMG2307L Document number: DS35415 Rev. 4 - 3 2017 E Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N Dec D November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Value -30 ±20 Unit V V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -2.5 -2.0 A Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -3.8 -3.0 A Continuous Drain Current (Note 7) VGS = -10V t ≦10sec TA = +25°C TA = +70°C ID -4.6 -3.6 A Continuous Drain Current (Note 7) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -3.1 -2.5 A IDM -20 A Pulsed Drain Current (Note 7) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 7) t ≦ 10sec Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec Operating and Storage Temperature Range Electrical Characteristics Value 0.76 159 1.36 94 1.9 65.8 -55 to +150 Unit W °C/W W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG @TC = +25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 70 105 4.8 -0.75 -3.0 90 134 -1.0 V |Yfs| VSD -1.0 VDS = VGS, ID = -250μA VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.5A VDS = -10V, ID = -2.5A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF 371.3 51.3 45.9 17 4.0 8.2 0.9 1.2 4.8 7.3 22.4 13.4 RDS(ON) mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -10V, VDS = -15V, ID = -3A VDS = -15V, VGS = -10V, RL = 15Ω, RG = 6Ω, ID = -1A 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMG2307L Document number: DS35415 Rev. 4 - 3 2 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L 8.0 8 VDS = -5.0V VGS =-3.5V )A 6.0 ( T N E R R U C 4.0 N I A R D ,D I 2.0 )A ( T N E R R U C N I A R D ,D I VGS =-4.0V VGS =-4.5V VGS =-2.5V VGS =-10V TA = 125C TA = -55C TA = 25C -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS =-3.0V TA = 150C 6 TA= 85C 4 2 VGS =-2.0V 0 0 1 1.5 2 2.5 3 3.5 4 4.5 -V DS , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics R 0 ) ( E C N A T S IS E R N O E C R U O S -N I A R D , )N VGS=-2.5V VGS=-4.5V S D 2 4 6 -I D, DRAIN SOURCE CURRENT(A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 E C N A T S 1.4 IS E R N O )d 1.2 E e C ilz a R m U r O o S N 1 -N ( I A R D , )N 0.8 O 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -V GS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 5 0.2 VGS = -4.5V TA = 150C TA= 125C 0.16 0.12 TA = 85C 0.08 TA = 25C TA = -55C 0.04 O (S D VGS=-10V 0 0 5 R 0 8 0 2 4 6 -I D, DRAIN SOURCE CURRENT(A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 8 0.2 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.4 ) (E C 0.35 N A T 0.3 S IS E R 0.25 -N O E 0.2 C R U O 0.15 S -N IA 0.1 R D , )N O 0.05 ( 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT DMG2307L VGS=-4.5V ID=-2A VGS=-10V ID=-2.7A (S D R 0.6 -50 O ( S D R -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE(C) Fig. 5 On-Resistance Variation with Temperature DMG2307L Document number: DS35415 Rev. 4 - 3 3 of 7 www.diodes.com 0.16 VGS =-4.5V ID =-2A 0.12 0.08 VGS =-10V ID =-2.7A 0.04 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 6 On-Resistance Variation with Temperature November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L )A ( T N E R R U C E C R U O S ,S I -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS(TH), GATE THRESHOLD VOLTAGE(V) 8 1.6 ID = -1mA 1.2 ID = -250μA 0.8 0.4 0 -50 6 4 2 0 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 1000 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 10000 f = 1MHz TA =150°C )F p ( E C N A T I C A P A 100 C N O IT C N U J ,T C Ciss )A 1000 n ( T N E R 100 R U C E G A 10 K A E L ,S S D 1 I -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 10 Coss Crss TA =125°C T A =85°C TA =25°C 0.1 0 5 10 15 20 25 0 5 10 15 20 25 30 -V DS , DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 -V DS , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 10 100 RDS(ON) Limited -ID (A) @PW =1ms -ID (A) @PW =100μs 8 VDS=-15V ID=-3A 6 -ID (A) @ P=10µs PW W =10μs )A 10 ( T N E R R U C 1 N I A R D ,D -I 0.1 -ID, DRAIN CURRENT (A) (V) -V GS,, GATE-SOURCE VGS GATE-SOURCE VOLTAGE VOLTAGE (V) NEW PRODUCT 2 DMG2307L 4 2 -ID (A) @ DC -ID(A) @PW =10s -ID(A) @PW =1s -ID(A) @PW =100ms TJ(MAX) = 150C TA= 25C Single Pulse 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG2307L Document number: DS35415 Rev. 4 - 3 10 0.01 0.1 4 of 7 www.diodes.com -ID (A) @PW =10ms 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 r(t) @ D=0.5 r(t) @ D=0.7 r(t) @ D=0.9 r(t) @ D=0.3 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 r(t) @ D=0.005 (t)=r(t) JA RR (t) = r(t)**RRJA θJA θJA =54癈 /W JA= RR 54℃/W θJA DutyCycle, Cycle,DD=t1/ Duty = t1 /t2 t2 r(t) @ D=Single Pulse 0.001 0.00001 0.0001 DMG2307L Document number: DS35415 Rev. 4 - 3 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) t1, PLUSE DURATION TIME (sec) Fig. 13Transient TransientThermal ThermalResistance Resistance Fig.13 5 of 7 www.diodes.com 10 100 1000 November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° NEW PRODUCT H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DMG2307L Document number: DS35415 Rev. 4 - 3 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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