Diodes DMG2307L-7 P-channel enhancement mode mosfet Datasheet

NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
DMG2307L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
90mΩ @ VGS = -10V
-3.8A
134mΩ @ VGS = -4.5V
-3.1A
BVDSS
NEW PRODUCT
Features and Benefits
-30V







Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.








General Purpose Interfacing Switch
Power Management Functions
Load Switch for Portable Devices

Top View
Case: SOT23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.08 grams (Approximate)
Internal Schematic
Top View
Ordering Information (Note 5)
Part Number
DMG2307L-7
DMG2307LQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000Tape & Reel
3000Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
G24 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2009
W
Month
Code
Jan
1
…
…
Feb
2
DMG2307L
Document number: DS35415 Rev. 4 - 3
2017
E
Mar
3
2018
F
Apr
4
May
5
2019
G
Jun
6
1 of 7
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2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
Dec
D
November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
DMG2307L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Value
-30
±20
Unit
V
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-2.5
-2.0
A
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.8
-3.0
A
Continuous Drain Current (Note 7) VGS = -10V
t ≦10sec
TA = +25°C
TA = +70°C
ID
-4.6
-3.6
A
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.1
-2.5
A
IDM
-20
A
Pulsed Drain Current (Note 7)
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Total Power Dissipation (Note 7) t ≦ 10sec
Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.76
159
1.36
94
1.9
65.8
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
PD
RθJA
PD
RθJA
PD
RθJA
TJ, TSTG
@TC = +25°C
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30






-1.0
±100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)

70
105
4.8
-0.75
-3.0
90
134

-1.0
V
|Yfs|
VSD
-1.0




VDS = VGS, ID = -250μA
VGS = -10V, ID = -2.5A
VGS = -4.5V, ID = -2.5A
VDS = -10V, ID = -2.5A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF












371.3
51.3
45.9
17
4.0
8.2
0.9
1.2
4.8
7.3
22.4
13.4












RDS(ON)
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -10V, VDS = -15V,
ID = -3A
VDS = -15V, VGS = -10V,
RL = 15Ω, RG = 6Ω,
ID = -1A
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG2307L
Document number: DS35415 Rev. 4 - 3
2 of 7
www.diodes.com
November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
8.0
8
VDS = -5.0V
VGS =-3.5V
)A 6.0
(
T
N
E
R
R
U
C 4.0
N
I
A
R
D
,D
I 2.0
)A
(
T
N
E
R
R
U
C
N
I
A
R
D
,D
I
VGS =-4.0V
VGS =-4.5V
VGS =-2.5V
VGS =-10V
TA = 125C
TA = -55C
TA = 25C
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS =-3.0V
TA = 150C
6
TA= 85C
4
2
VGS =-2.0V
0
0
1
1.5 2 2.5 3 3.5 4 4.5
-V DS , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
R
0
)

(
E
C
N
A
T
S
IS
E
R
N
O
E
C
R
U
O
S
-N
I
A
R
D
, )N
VGS=-2.5V
VGS=-4.5V
S
D
2
4
6
-I D, DRAIN SOURCE CURRENT(A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
E
C
N
A
T
S
1.4
IS
E
R
N
O )d
1.2
E e
C ilz
a
R m
U r
O o
S N
1
-N (
I
A
R
D
, )N
0.8
O
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-V GS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
5
0.2
VGS = -4.5V
TA = 150C
TA= 125C
0.16
0.12
TA = 85C
0.08
TA = 25C
TA = -55C
0.04
O
(S
D
VGS=-10V
0
0
5
R
0
8
0
2
4
6
-I D, DRAIN SOURCE CURRENT(A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
8
0.2
)

(
E
C
N
A
T
S
IS
E
R
-N
O
E
C
R
U
O
S
-N
IA
R
D
,N
)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.4
)

(E
C 0.35
N
A
T
0.3
S
IS
E
R 0.25
-N
O
E
0.2
C
R
U
O 0.15
S
-N
IA
0.1
R
D
, )N
O 0.05
(
0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
NEW PRODUCT
DMG2307L
VGS=-4.5V
ID=-2A
VGS=-10V
ID=-2.7A
(S
D
R
0.6
-50
O
(
S
D
R
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE(C)
Fig. 5 On-Resistance Variation with Temperature
DMG2307L
Document number: DS35415 Rev. 4 - 3
3 of 7
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0.16
VGS =-4.5V
ID =-2A
0.12
0.08
VGS =-10V
ID =-2.7A
0.04
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 6 On-Resistance Variation with Temperature
November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
)A
(
T
N
E
R
R
U
C
E
C
R
U
O
S
,S
I
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
8
1.6
ID = -1mA
1.2
ID = -250μA
0.8
0.4
0
-50
6
4
2
0
0
25
50
75 100 125 150
(°C))
TA, AMBIENT TEMPERATURE (癈
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-25
1000
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
10000
f = 1MHz
TA =150°C
)F
p
(
E
C
N
A
T
I
C
A
P
A 100
C
N
O
IT
C
N
U
J
,T
C
Ciss
)A 1000
n
(
T
N
E
R
100
R
U
C
E
G
A
10
K
A
E
L
,S
S
D
1
I
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
10
Coss
Crss
TA =125°C
T A =85°C
TA =25°C
0.1
0
5
10
15
20
25
0
5
10
15
20
25
30
-V DS , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
30
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
10
100
RDS(ON)
Limited
-ID (A) @PW =1ms
-ID (A) @PW =100μs
8
VDS=-15V
ID=-3A
6
-ID (A) @
P=10µs
PW
W =10μs
)A 10
(
T
N
E
R
R
U
C
1
N
I
A
R
D
,D
-I 0.1
-ID, DRAIN CURRENT (A)
(V)
-V
GS,, GATE-SOURCE
VGS
GATE-SOURCE VOLTAGE
VOLTAGE (V)
NEW PRODUCT
2
DMG2307L
4
2
-ID (A) @ DC
-ID(A) @PW =10s
-ID(A) @PW =1s
-ID(A) @PW =100ms
TJ(MAX) = 150C
TA= 25C
Single Pulse
0
0
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMG2307L
Document number: DS35415 Rev. 4 - 3
10
0.01
0.1
4 of 7
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-ID (A) @PW =10ms
1
10
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
DMG2307L
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
r(t) @ D=0.3
0.1
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
0.01
r(t) @ D=0.01
r(t) @ D=0.005
(t)=r(t)
JA
RR
(t)
= r(t)**RRJA
θJA
θJA
=54癈
/W
JA=
RR
54℃/W
θJA
DutyCycle,
Cycle,DD=t1/
Duty
= t1 /t2
t2
r(t) @ D=Single Pulse
0.001
0.00001
0.0001
DMG2307L
Document number: DS35415 Rev. 4 - 3
0.001
0.01
0.1
1
t1,
PULSE
DURATION
TIMES
(sec)
t1, PLUSE DURATION TIME (sec)
Fig. 13Transient
TransientThermal
ThermalResistance
Resistance
Fig.13
5 of 7
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10
100
1000
November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
DMG2307L
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
NEW PRODUCT
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Dimensions
C
X
X1
Y
Y1
C
Y1
X
DMG2307L
Document number: DS35415 Rev. 4 - 3
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
6 of 7
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November 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3125L
DMG2307L
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMG2307L
Document number: DS35415 Rev. 4 - 3
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November 2017
© Diodes Incorporated
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