Formosa ASD355-N Silicon epitaxial planar type Datasheet

Formosa MS
Advanced Switching Diode
ASD355-N
Silicon epitaxial planar type
Features
Small surface mounting type
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
High reliability
R0.5 (0.02) Typ.
0.053 (1.35)
0.045 (1.15)
High speed ( trr < 4 ns )
0.035 (0.9)
0.028 (0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cat hode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
SOD-323
MAXIMUM RATINGS (AT T A=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Repetitive peak reverse voltage
Symbol
MIN.
TYP.
MAX.
UNIT
V RRM
100
V
Peak forward surge current
t p < 1s
I FSM
500.0
mA
Average forward current
VR = 0
I FAV
100
mA
Power dissipation
PV
350
mW
Junction temperature
Tj
175
o
C
Storage temperature
T STG
+175
o
C
-55
ELECTRICAL CHARACTERISTICS (AT T A=25 oC unless otherwise noted)
PARAMETER
Forward voltage
CONDITIONS
I F = 10mA
V R = 25V
Reverse current
V R = 25V , T j = 150
o
C
V R = 80V
Breakdown current
I R = 100uA , T P /T = 0.01 T P = 0.3ms
Diode capacitance
V R = 0 , f = 1MHz , V HF = 50mV
Thermal resistance
Junction to ambient
Reverse recovery time
I F =10mA, V R =6V, I RR = 0.1 X I R , R L =100 OHM
Symbol
MAX.
UNIT
VF
MIN.
1.2
V
IR
100
nA
IR
50
uA
30
uA
IR
V (BR)
CD
TYP.
100
V
4.0
R th JA
t rr
pF
K/mW
4
ns
RATING AND CHARACTERISTIC CURVES (ASD355-N)
FIG.3 - TYPICAL REVERSE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
CHARACTERISTICS
Tj=25 C
1000
100
REVERSE CURRENT, (nA)
INSTANTANEOUS FORWARD CURRENT,(mA)
1000
Tj=25 C
Pulse Width 300us
1% Duty Cycle
10
Scattering Limit
Scattering Limit
100
10
1.0
1
0.1
0
.4
.8
1.2
1.6
1
2.0
10
100
REVERSE VOLTAGE
FORWARD VOLTAGE,(V)
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
FIG.2 - TYPICAL DIODE CAPACITANCE
3.5
10
3
2.5
REVERSE CURRENT, (uA)
DIODE CAPACITANCE,(pF)
3.0
2.0
1.5
1.0
0.5
10
ES
2
=80
VR
V
10
U
AL
.V
YP
1
=8
VR
0V
0.1
1
10
100
1000
10
REVERSE VOLTAGE,(V)
10
ES
S
UE
/T
=2
0
U
AL
.V
AX
/M
5V
/
L
VA
P.
TY
VR
-1
-2
0
200
100
o
JUNCTION TEMPERATURE ( C)
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