Formosa MS Advanced Switching Diode ASD355-N Silicon epitaxial planar type Features Small surface mounting type 0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ. High reliability R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) High speed ( trr < 4 ns ) 0.035 (0.9) 0.028 (0.7) Mechanical data Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cat hode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram SOD-323 MAXIMUM RATINGS (AT T A=25 oC unless otherwise noted) PARAMETER CONDITIONS Repetitive peak reverse voltage Symbol MIN. TYP. MAX. UNIT V RRM 100 V Peak forward surge current t p < 1s I FSM 500.0 mA Average forward current VR = 0 I FAV 100 mA Power dissipation PV 350 mW Junction temperature Tj 175 o C Storage temperature T STG +175 o C -55 ELECTRICAL CHARACTERISTICS (AT T A=25 oC unless otherwise noted) PARAMETER Forward voltage CONDITIONS I F = 10mA V R = 25V Reverse current V R = 25V , T j = 150 o C V R = 80V Breakdown current I R = 100uA , T P /T = 0.01 T P = 0.3ms Diode capacitance V R = 0 , f = 1MHz , V HF = 50mV Thermal resistance Junction to ambient Reverse recovery time I F =10mA, V R =6V, I RR = 0.1 X I R , R L =100 OHM Symbol MAX. UNIT VF MIN. 1.2 V IR 100 nA IR 50 uA 30 uA IR V (BR) CD TYP. 100 V 4.0 R th JA t rr pF K/mW 4 ns RATING AND CHARACTERISTIC CURVES (ASD355-N) FIG.3 - TYPICAL REVERSE FIG.1-TYPICAL FORWARD CHARACTERISTICS CHARACTERISTICS Tj=25 C 1000 100 REVERSE CURRENT, (nA) INSTANTANEOUS FORWARD CURRENT,(mA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle 10 Scattering Limit Scattering Limit 100 10 1.0 1 0.1 0 .4 .8 1.2 1.6 1 2.0 10 100 REVERSE VOLTAGE FORWARD VOLTAGE,(V) FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3 2.5 REVERSE CURRENT, (uA) DIODE CAPACITANCE,(pF) 3.0 2.0 1.5 1.0 0.5 10 ES 2 =80 VR V 10 U AL .V YP 1 =8 VR 0V 0.1 1 10 100 1000 10 REVERSE VOLTAGE,(V) 10 ES S UE /T =2 0 U AL .V AX /M 5V / L VA P. TY VR -1 -2 0 200 100 o JUNCTION TEMPERATURE ( C)