Intersil ISL97652 4-channel integrated lcd supply with dual vcom amplifier Datasheet

ISL97652
®
Data Sheet
November 2, 2007
4-Channel Integrated LCD Supply with
Dual VCOM Amplifiers
FN9287.1
Features
• 8V to 15V input supply
• Overvoltage protection (OVP)
• 2A integrated AVDD delay FET, with short circuit protection
• Dual charge pump controllers for VON and VOFF
• VLOGIC buck with integrated 2.5APEAK FET
• VON slicing
• Dual high speed VCOM amplifiers
• 650kHz/1.3MHz switching frequency
• Integrated sequencing
The asynchronous buck converter features an integrated
2.5A FET. It also operates from the 650kHz or 1.3MHz
internal clock and features separate enable and soft-start
control.
• UVLO and OTP protection
The dual charge pump controllers used for VON and VOFF
generation uses the full FOSC switching frequency to allow
the use of small output components for board space
efficiency. VON is further processed through an integrated
VON-SLICE circuit for reduced flicker.
Applications
• Pb-free (RoHS compliant)
• LCD-TVs (up to 40”)
• Industrial/medical LCD displays
Pinout
Ordering Information
PART NUMBER
(Note)
TEMP.
RANGE
(°C)
PART
MARKING
PACKAGE
(Pb-Free)
PKG.
DWG. #
37 SW1
38 SW2
39 SWI
40 SUI
43 AVIN
44 NEG2
45 POS2
48 NEG1
Available in the 48 Ld 7mmx7mm QFN package, the
ISL97652 is specified for ambient operation over the
-40°C to +85°C temperature range.
46 OUT2
ISL97652
(48 LD QFN)
TOP VIEW
47 OGND
The integrated amplifiers feature high slew-rate and high
output current capability. They are permanently enabled
when AVIN is present.
• Thermally enhanced 7x7 QFN package
41 FB
Operating at 650kHz or 1.3MHz, the AVDD boost converter
features a 2.8A boost FET. A short circuit protected AVDD
delay switch is integrated to provide sequencing of the AVDD
output. Feedback is taken from the far side of the delay FET
for improved regulation and an OVP circuit protects output
side components. The boost features programmable
soft-start.
• AVDD boost up to 19.5V (OVP threshold), with integrated
2.8APEAK FET
42 SWO
The ISL97652 represents a high power, integrated LCD
supply IC targeted at large panel LCD displays. The
ISL97652 integrates a high power, boost converter for AVDD
generation, delay switch, regulated VON and VOFF charge
pumps, VON slicing circuitry, a buck regulator for logic supply
generation and dual high power VCOM amplifiers.
POS1 1
36 PGND3
OUT1 2
35 PGND2
VGL 3
34 PGND1
33 EN1
CE 4
32 EN2
VFLK 5
ISL97652IRZ
ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7
VDPM 6
ISL97652IRZ-T*
ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7
RE 7
1
29 DLY2
SWB2 24
SWB1 23
CBOOT 22
FBB 21
VCB 20
25 PVIN1
SSB 19
26 PVIN2
DRVP 12
DLY1 18
27 VDC
GND 11
REF 17
28 FREQ
FBP 10
FBN 16
VGH 9
AGND 15
NOTE: These Intersil Pb-free plastic packaged products employ
special Pb-free material sets; molding compounds/die attach materials
and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which
is RoHS compliant and compatible with both SnPb and Pb-free
soldering operations. Intersil Pb-free products are MSL classified at Pbfree peak reflow temperatures that meet or exceed the Pb-free
requirements of IPC/JEDEC J STD-020.
30 SS
SUP 13
*Please refer to TB347 for details on reel specifications.
31 VC
VGHM 8
DRVN 14
ISL97652IRZ-TK* ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7
THERMAL
PAD
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006-2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL97652
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Maximum Pin Voltages, All Pins Except Below . . . . . . . -0.3 to 6.5V
SW, SUP, DRVP, DRVN, SUI, SWO, AVIN, POS1, NEG1, OUT1,
POS2, NEG2, OUT2, VGL . . . . . . . . . . . . . . . . . . -0.3 to 22V
SWI,SW2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 24V
SUI . . . . . . . . . . . . . . . . . . . . . . . V(SWI) - 6.5V to V(SWI) +0.3V
PVIN, SWB, VFLK, VDPM, EN1, EN2, FREQ . . . . . -0.3 to 15.5V
VGH, VGHM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 36V
Thermal Resistance
θJA (°C/W)
θJC (°C/W)
7x7 QFN Package (Notes 1, 2) . . . . . .
26
1.5
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Power Dissipation
TA ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.7W
TA = +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.0W
TA = +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4W
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Input Voltage Range, VIN . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 15V
Boost Output Voltage, AVDD . . . . . . . . . . . . . . . . . . . . . up to 19.5V
VON Output Range, VON . . . . . . . . . . . . . . . . . . . . . . +15V to +32V
VOFF Output Range, VOFF . . . . . . . . . . . . . . . . . . . . . . . -15V to -5V
Logic Output Voltage Range, VLOGIC . . . . . . . . . . . . +1.5V to +3.3V
Input Capacitance, CIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2x10µF
Boost Inductor, L1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3µH-10µH
Output Capacitance, COUT . . . . . . . . . . . . . . . . . . . . . . . . . . 2x22µF
Buck Inductor, L2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3µH-10µH
Operating Ambient Temperature Range . . . . . . . . . -40°C to +85°C
Operating Junction Temperature Range . . . . . . . . -40°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
PARAMETER
VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
12
15
V
SUPPLY PINS
PVIN
Supply Voltage
8
VSUP
Charge Pumps Positive Supply
8
20
V
VGH
VON-SLICE Positive Supply
8
30
V
AVIN
Op-AmpV Positive Supply
4.5
20
V
PIVIN
Quiescent Current into PVIN
3
6
mA
0.5
5
µA
0.5
mA
Disabled
5
µA
7
mA
Enabled, no switching
Disabled
ISUP
VSUP Supply Current
Enabled, no switching and
VPOUT = VSUP
IAVIN
AVIN Supply Current
For AVIN range
VREF
Reference Voltage
TA = +25°C
FOSC
1.252
1.265
1.278
V
1.240
1.265
1.290
V
Oscillator Frequency for Buck, Boost, VON
and VOFF Functions
FREQ = VIN
1100
1300
1500
kHz
FREQ = GND
550
650
750
kHz
IBOOST
Boost Switch Peak Current
Boost Peak Current limit
2.8
EFFBOOST
Peak Efficiency
See graphs and component
recommendations
rDS(ON)
Switch On Resistance
AVDD BOOST
2
A
91
125
%
200
mΩ
FN9287.1
November 2, 2007
ISL97652
Electrical Specifications
PARAMETER
ΔVBOOST/ΔVIN
VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 8V to 12V at ILOAD = 200mA,
see “Typical Performance Curves”
on page 6
0.08
%
ΔVBOOST/ΔIOUT Load Regulation
100mA to 500mA, see “Typical
Performance Curves” on page 6
0.5
%
VFB
TA = +25°C
Dmax_boost
Dmin_boost
Line Regulation
Boost Feedback Voltage
Boost Maximum Duty Cycle
Boost Minimum Duty Cycle
1.252
1.265
1.278
V
1.240
1.265
1.290
V
FOSC = 650kHz
90
%
FOSC = 1.3MHz
85
%
FOSC = 650kHz
10
%
FOSC = 1.3MHz
20
%
AVDD DELAY SWITCH
RPD
RDS(ON)
SWIMAX
Maximum SWI Voltage
21
IdelayFET
Delay FET RMS Current Limit
1.5
FETtimeout
Delay FET Fault Timeout
Ipull-Down
180
240
mΩ
V
2
A
100
µs
Pull-down Current Applied to FET Gate and
SUI
65
µA
VGATE
SUI Voltage When Switch is Fully Switched
On
V(SWI) - 5
V
SWILEAK
SWI Leakage Current When Disabled
VDSOK
Drain Source Voltage When Boost is Enabled SWI =16.5V
15.7
V
VDSHYS
Hysteresis on VDSOK Spec
SWI =16.5V
1.4
V
IBUCK
Buck Switch Current
Current limit
EFFBUCK
Peak Efficiency
See graphs and component
recommendations
RDS(ON) BK
Switch On Resistance
ΔVBUCK/ΔVIN
Line Regulation
VIN = 8V to 12V at ILOAD = 200mA,
see “Typical Performance Curves”
on page 6
0.05
%
ΔVBUCK/ΔIOUT
Load Regulation
200mA to 1000mA, see “Typical
Performance Curves” on page 6
0.1
%
VFBB
FBL Regulation Voltage
TA = +25°C
I(SWO) > IdelayFET
VIN = 15V, SWI = 21V, SWO = 0V,
EN1 = EN2 = 0V
1
µA
VLOGIC BUCK
Dmax_buck
Dmin_buck
Buck Maximum Duty Cycle
Buck Minimum Duty Cycle
2.5
A
85
170
%
250
mΩ
1.252
1.265
1.278
V
1.240
1.265
1.290
V
FOSC = 650kHz
90
%
FOSC = 1.3MHz
85
%
FOSC = 650kHz
10
%
FOSC = 1.3MHz
20
%
NEGATIVE (VOFF) CHARGE PUMP
VOFF
VOFF Output Voltage Range
ILoad_NCP_min External Load Driving Capability
3
1X Charge Pump
VSUP >5V
VSUP + 1.4V
30
0
V
mA
FN9287.1
November 2, 2007
ISL97652
Electrical Specifications
PARAMETER
VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
Ron(DRVN)H
High-Side Driver ON Resistance at DRVN
I(DRVN) = +60mA
11
Ω
RON(DRVN)L
Low-Side Driver ON Resistance at DRVN
I(DRVN) = -60mA
10
Ω
Ipu(DRVN)lim
Pull-Up Current Limit in DRVN
V(DRVN) = 0V to V(SUP) - 0.5V
Ipd(DRVN)lim
Pull-Down Current Limit in DRVN
V(DRVN) = 0.36V to V(VSUP)
I(DRVN)leak
Leakage Current in DRVN
V(FBN) < 0 or EN1 = LOW
VFBN
FBN Regulation Voltage
TA = +25°C
D_NCP_max
Max Duty Cycle of the Negative Charge
Pump
Rpd(FBN)off
Pull-Down Resistance, Not Active
60
270
-200
-2
mA
-60
mA
2
µA
0.48
0.5
0.52
V
0.47
0.5
0.53
V
50
I(FBN) = 500µA
2.5
3.5
%
4.5
kΩ
34
V
POSITIVE (VON) CHARGE PUMP
VON
VON Output Voltage Range
ILoad_PCP_min
External Load Driving Capability
Ron(DRVP)H
High-Side Driver ON Resistance at DRVP
I(DRVP) = +60mA
11
Ω
Ron(DRVP)L
Low-Side Driver ON Resistance at DRVP
I(DRVP) = -60mA
10
Ω
Ipu(DRVP)lim
Pull-Up Current Limit in DRVP
V(DRVP) = 0V to V(SUP) - 0.5V
Ipd(DRVP)lim
Pull-Down Current Limit in DRVP
V(DRVP) = 0.36V to V(VSUP)
I(DRVP)leak
Leakage Current in DRVP
VFBP > VREF or EN1 or EN2 = low
VFBP
FBP Regulation Voltage
TA = +25°C
D_PCP_max
2X or 3X charge pump
VSUP + 2V
30
60
mA
270
-200
-2
mA
-60
mA
2
µA
1.225
1.25
1.275
V
1.22
1.25
1.28
V
Max Duty Cycle of the Positive Charge Pump
50
%
LOGIC INPUTS
VHI
Logic “HIGH”
EN1, EN2, VFLK, VDPM
2.0
V
VLO
Logic “LOW”
EN1, EN2, VFLK, VDPM
0.8
V
IL_pd
Logic Pin Pull-Down Current
VLOGIC > VLO
25
µA
30
V
VON SLICE
VGH
VGH Voltage
8
IVGH
VGH Input Current
VFLK = 0, RE=33K
300
µA
VFLK = 5V, RE=33K
40
µA
VGL
VGL Voltage
3
IVGL
VGL Input Current
-2
RONVGH
VGH to VGH_M On Resistance
TDEL
DELAY Time
CE = 470pF
VGH - 2
V
0.1
2
µA
15
30
Ω
10
µs
VCOM AMPLIFIERS
Icont
Maximum Continuous Current Per Amplifier
50
VSAMP
Supply Voltage
4.5
ISAMP
Supply Current per amplifier
3
VOS
Offset Voltage
3
20
mV
IB
Noninverting Input Bias Current per amplifier
0
150
nA
CMIR
Common Mode Input Voltage Range
AVIN
V
4
0
mA
20
V
mA
FN9287.1
November 2, 2007
ISL97652
Electrical Specifications
PARAMETER
VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
CMRR
Common-Mode Rejection Ratio
50
70
dB
PSRR
Power Supply Rejection Ratio
70
85
dB
VOH
Output Voltage Swing High
IOUT(SOURCE) = 5mA
AVIN - 50
mV
VOH
Output Voltage Swing High
IOUT(SOURCE) = 50mA
AVIN - 450
mV
VOL
Output Voltage Swing Low
IOUT(SINK) = 5mA
50
mV
VOL
Output Voltage Swing Low
IOUT(SINK) = 50mA
450
mV
ISC
Output Short Circuit Current per amplifier
400
mA
SR
Slew Rate
50
V/µs
BW
Gain Bandwidth
30
MHz
300
-3dB gain point
FAULT DETECTION THRESHOLDS
OVP
Overvoltage Protection Threshold
AVDD rising
OVPHYS
Overvoltage Protection Threshold Hysteresis
VLOR
Undervoltage Lockout Threshold
PVIN rising
VLOF
Undervoltage Lockout Threshold
PVIN falling
TOFF
Thermal Shut-Down
TON
18.8
19.5
20
0.8
7.8
V
8.0
V
7.6
V
Temperature rising
150
°C
Reset after Thermal Shut-Down
Temperature falling
100
°C
Vth_AVDD(FB)
AVDD Boost Short Detection
V(FBFBB) falling less than
1.14
V
Vth_VLOGIC(FB
B)
VLOGIC Buck Short Detection
V(FBB) falling less than
1.14
V
Vth_POUT(FBP) POUT Charge Pump Short Detection
V(FBP) falling less than
1.14
V
Vth_NOUT(FBN) NOUT Charge Pump Short Detection
V(FBN) rising more than
0.525
V
64
µs
TFD
Fault Delay Time to Chip Turns Off
7.4
V
START-UP SEQUENCING
ISS
SS, SSB Current
SS, SSB ≤1.5V
6
µA
IDLY
DLY1, DLY2 Current
DLY1, DLY2 <1.5V
6
µA
SSTH1
SS, SSB Voltage to Give Max Current Limit
1.27
V
SSTH2
SS, SSB Voltage to Enable Fault Checking
2.05
V
DELTH1
DEL1, DEL2 Voltage to Give Max Current
Limit
1.27
V
DELTH2
DEL1, DEL2 Voltage to Enable Fault
Checking
2.05
V
5
FN9287.1
November 2, 2007
ISL97652
100
95
95
90
90
85
85
EFFICIENCY (%)
EFFICIENCY (%)
Typical Performance Curves
13V VIN TO 14V VOUT
8V VIN TO 14V VOUT
80
12V VIN TO 14V VOUT
75
70
75
65
55
0
500
1000
1500
50
2000
0
500
IOUT (mA)
1500
FIGURE 2. BOOST EFFICIENCY @ 1.3MHz
0.20
BOOST LOAD REGULATION (%)
0.20
12V VIN TO 14V VOUT
0.15
0.10
0.05
0.00
-0.05
13V VIN TO 14V VOUT
-0.10
8V VIN TO 14V VOUT
-0.15
1000
IOUT (mA)
FIGURE 1. BOOST EFFICIENCY @ 650kHz
BOOST LOAD REGULATION (%)
13V VIN TO 14V VOUT
12V VIN TO 14V VOUT
70
60
65
60
8V VIN TO 14V VOUT
80
0
500
1000
1500
2000
8V VIN TO 14V VOUT
0.15
0.10
0.05
0.00
13V VIN TO 14V VOUT
-0.05
12V VIN TO 14V VOUT
-0.10
0
500
1000
1500
2000
IOUT (mA)
IOUT (mA)
FIGURE 4. BOOST LOAD REGULATION @ 1.3MHz
FIGURE 3. BOOST LOAD REGULATION @ 650kHz
BOOST LINE REGULATION (%)
0.09
CH3 = IOUT
0.08
0.07
0.06
0.05
0.04
fs = 1.3MHz
0.03
fs = 650kHz
0.02
0.01
0.00
CH4 = AVDD (AC COUPLED)
8
9
10
11
12
13
14
15
16
VIN (V)
FIGURE 5. BOOST LINE REGULATION
6
FIGURE 6. BOOST TRANSIENT RESPONSE @ 650kHz
FN9287.1
November 2, 2007
ISL97652
Typical Performance Curves (Continued)
100
90
BUCK EFFICIENCY (%)
CH3 = IOUT
80
8V VIN TO 3.3V VOUT
70
60
13V VIN TO 3.3V VOUT
12V VIN TO 3.3V VOUT
50
40
30
20
10
CH4 = AVDD (AC COUPLED)
0
0
500
1000
1500
2000
IOUT (mA)
FIGURE 7. BOOST TRANSIENT RESPONSE @ 1.3MHz
FIGURE 8. BUCK EFFICIENCY @ 650kHz
0
BUCK LOAD REGULATION (%)
90
BUCK EFFICIENCY (%)
85
80
75
8V VIN TO 3.3V VOUT
12V VIN TO 3.3V VOUT
70
65
60
13V VIN TO 3.3V VOUT
55
50
8V VIN TO 3.3V VOUT
-0.05
-0.1
-0.15
-0.2
12V VIN TO 3.3V VOUT
-0.25
-0.3
13V VIN TO 3.3V VOUT
-0.35
0
500
1000
1500
2000
2500
0
500
IOUT (mA)
1000
1500
IOUT (mA)
2000
2500
FIGURE 10. BUCK LOAD REGULATION @ 650kHz
FIGURE 9. BUCK EFFICIENCY @ 1.3MHz
BUCK LOAD REGULATION (%)
0
-0.05
CH3 = IOUT
8V VIN TO 3.3V VOUT
-0.1
-0.15
-0.2
12V VIN TO 3.3V VOUT
-0.25
-0.3
13V VIN TO 3.3V VOUT
-0.35
-0.4
0
500
1000
1500
2000
2500
CH4 = VLOGIC (AC COUPLED)
IOUT (mA)
FIGURE 11. BUCK LOAD REGULATION @ 1.3MHz
7
FIGURE 12. BUCK TRANSIENT RESPONSE @ 650kHz
FN9287.1
November 2, 2007
ISL97652
Typical Performance Curves (Continued)
0
VON LOAD REGULATION (%)
CH3 = IOUT
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
CH4 = VLOGIC (AC COUPLED)
-1
0
FIGURE 13. BUCK TRANSIENT RESPONSE @ 1.3MHz
10
20
30
40
IOUT (mA)
50
60
70
FIGURE 14. VON LOAD REGULATION
VOFF LOAD REGULATION (%)
0.2
CH3 = VFLK
0.15
0.1
0.05
0
-0.05
CH4 = Vgh_M
-0.1
-0.15
-0.2
0
5
10
15
20
IOUT (mA)
25
FIGURE 15. VOFF LOAD REGULATION
30
35
FIGURE 16. GPM WAVEFORM
INPUT SIGNAL
OUTPUT SIGNAL
FIGURE 17. VCOM RISING SLEW RATE
8
FN9287.1
November 2, 2007
ISL97652
Pin Descriptions
PIN NUMBER
PIN NAME
DESCRIPTION
1
POS1
Op-amp 1 non-inverting input
2
OUT1
Op-amp 1 output
3
VGL
4
CE
5
VFLK
GPM control pin
6
VDPM
GPM enable pin
7
RE
8
VGHM
9
VGH
GPM higher supply pin
10
FBP
Positive charge pump feedback voltage
11
GND
Positive and negative charge pump Ground connection
12
DRVP
Positive charge pump driver output pin
GPM lower supply pin
GPM delay pin
GPM output voltage slope adjust pin
GPM output voltage
13
SUP
14
DRVN
Negative charge pump driver output pin
Positive and negative charge pump supply
15
AGND
Device analog Ground
16
FBN
Negative charge pump feedback voltage
17
REF
Reference voltage for all internal functions and external VOFF feedback
18
DLY1
Buck and negative charge pump delay pin
19
SSB
Buck soft-start pin
20
VCB
Buck compensation pin
21
FBB
Buck feedback voltage
22
CBOOT
23, 24
SWB1, SWB2
Buck FET source connection
Buck boot-strap capacitor
25, 26
PVIN1, PVIN2
Input supply
27
VDC
28
FREQ
29
DLY2
30
SS
Internal regulated 5V supply - attach external decoupling capacitor
Switching frequency select pin
Boost and positive charge pump delay pin
Boost soft-start pin
31
VC
Boost compensation pin
32
EN2
Boost and positive charge pump enable
33
EN1
34
PGND1
Buck and negative charge pump enable
35, 36
PGND2, PGND3
37, 38
SW1, SW2
39
SWI
40
SUI
AVDD start-up in-rush control
41
FB
Boost feedback voltage
42
SWO
Device power GND
Boost FET source connection
Boost FET drain connection
AVDD delay switch source connection
AVDD delay switch drain connection
43
AVIN
VCOM amplifier positive supply pin
44
NEG2
Op-amp 2 inverting input
45
POS2
Op-amp 2 non-inverting input
46
OUT2
Op-amp 2 output
47
OGND
Op-amp ground
48
NEG1
Op-amp 1 inverting input
9
FN9287.1
November 2, 2007
ISL97652
Block Diagram
SSB
VCB
FBB
FB
VC FREQ
SS
CBOOT
+
PVIN1
SW1
REF
F/F
+
OSC
Q
F/F
PVIN2
S
SW2
S
-
OSC
SLOPE
COMPENSATION
Q
R
∑
+
R
+
+
-
BOOST CONVERTER
∑
PGND2
SWB1
PGND3
FOSC
SUI
SWB2
BUCK CONVERTER
SWI
GATE
CONTROL
PGND1
SWO
UVLO AND THERMAL
PROTECTION
AVIN
POS1
NEG1
AVIN
+
-
POS2
+
-
NEG2
OGND
OUT2
OUT1
DLY1
DLY2
REF
BIAS AND
EN1
SEQUENCE
EN2
CONTROL
SUP
PVIN2
FOSC
5V
VOFF
CHARGE
PUMP
CONTROL
DRVN
REGULATOR
GND
+
-
VDC
0.5V
FBN
SUP
RE
CE
VON
FOSC
SLICE CIRCUIT
VDPM
VON
CHARGE
PUMP
CONTROL
DRVP
+
-
VGH VGHM VGHL VFLK
10
1.265V
FBP
AGND
FN9287.1
November 2, 2007
ISL97652
Typical Application Diagram
L1
VIN
CIN
6.8µH
100nF
3 x 10µF
FREQ
VIN
CVIN
0.1µF
PVIN1 PVIN2
SUP
REF
CREF
220nF
R5
40.2k
C2*
VMAIN
D1
COUT
3x
R1
10µF
1x100nF 226k
SW1
SW2
FB
VGL
SWI
SUI
R6
453k
D4
C3*
VOFF
AVDD
*
4.7µF
10k
DLY1
DLY2
D3
CE
POS1
C12
4 x 10µF
R2
20k
R4 *
RC
SS
DRVN
COFF
R9
100k
R3
0
CSUI
0.1µF
VC
CN
0.1µF
*
CAVDD
SWO
FBN
AVDD
C11
CE
10nF
CD2
0.1µF
CSS
0.1µF
CD1
0.1µF
CC
4.7nF
NEG1
R10
100k
COMMON
BACK-PLANE
OUT1
RE
POS2
VGHM
NEG2
COMMON
BACK-PLANE
AVDD
TCON BIAS
C21
*
R11
340
CBOOT
SWB1
SWB2
DRVP
VFLK
VDPM
EN2
FBB
SSB
R12
200
R7
232k
CON
4.7µF
FBP
PGND3
PGND2
PGND1
D5
C22
*
C4*
AVIN
CAVIN
0.1µF 470nF
L2 CB
RE
10k
VON
VGH
OUT2
6.8µH
CB
2x10µF
GATE DRIVER
SUPPLY
C5*
R8
10k
D7
CP
0.1µF
D6
AVDD
VCB
VDC GND OGND AGND EN1
CSSB
0.1µF
10k
RCB
4.7nF
CCB
CDC
4.7µF
*Optional components.
NOTE: Separate PGND and SGND planes must be used, see PCB layout procedure section.
Applications Information
Boost Converter
The ISL97652 provides a complete power solution for TFT
LCD applications. The system consists of one boost
converter to generate AVDD voltage for column drivers, one
buck converter to provide voltage to logic circuit in the LCD
panel, integrated VON and VOFF charge pump controllers,
AVDD delay FET, VON-SLICE and dual high speed VCOM
amplifiers. With the high output current capability, this part is
ideal for big screen LCD TV and monitor panel application.
The boost converter is a current mode PWM converter
operating at either 650kHz or 1.3MHz. 650kHz operation
allows operation down to lower duty cycles. It can operate in
both discontinuous conduction mode (DCM) at light load or
when operating duty cycle is lower than the minimum duty
cycle and continuous mode (CCM). In continuous current
mode, current flows continuously in the inductor during the
entire switching cycle in steady state operation. The voltage
conversion ratio in continuous current mode is given by:
The integrated boost converter and buck converter operate
at either 650kHz or 1.3MHz which allow the use of multilayer
ceramic capacitors and low profile inductor which result in
low cost, compact and reliable system.
V BOOST
1
------------------------ = ------------1–D
V IN
(EQ. 1)
Where D is the duty cycle of the switching MOSFET.
11
FN9287.1
November 2, 2007
ISL97652
The boost converter uses a summing amplifier architecture
consisting of gm stages for voltage feedback, current
feedback and slope compensation. A comparator looks at
the peak inductor current cycle by cycle and terminates the
PWM cycle if the current limit is reached.
An external resistor divider is required to divide the output
voltage down to the nominal reference voltage. Current
drawn by the resistor network should be limited to maintain
the overall converter efficiency. The maximum value of the
resistor network is limited by the feedback input bias current
and the potential for noise being coupled into the feedback
pin. A resistor network in the order of 60kΩ is recommended.
The boost converter output voltage is determined by the
following equation:
R1 + R2
V BOOST = --------------------- × V FB
R2
(EQ. 2)
The current through the MOSFET is limited to 2.8Apeak.
This restricts the maximum output current (average) based
on the following equation:
ΔI L
V IN
I OMAX = ⎛ I LMT – --------⎞ × --------⎝
2 ⎠ VO
(EQ. 3)
Where ΔIL is peak to peak inductor ripple current, and is set by:
V IN D
ΔI L = --------- × ----L
fS
(EQ. 4)
where fs is the switching frequency
The following table gives typical values (margins are
considered 10%, 3%, 20%, 10% and 15% on VIN, VO, L, fS
and IOMAX):
TABLE 1. MAXIMUM OUTPUT CURRENT CALCULATION
VIN (V)
VO (V)
L (µH)
fs (MHz)
IOMAX (mA)
12
15
6.8
0.65
1890
12
15
6.8
1.3
1955
12
18
6.8
0.65
1500
12
18
6.8
1.3
1590
8
15
6.8
0.65
1200
8
15
6.8
1.3
1275
8
18
6.8
0.65
950
8
18
6.8
1.3
1050
higher frequency option is selected. The minimum boost
duty cycle of the ISL97652 is ~10% for 650kHz and ~20%
for 1.3MHz. When the operating duty cycle is lower than the
minimum duty cycle, the part will not switch in some cycles
randomly, which will cause some LX pulses to be skipped. In
this cas, LX pulses are not consistent any more, but the
output voltage (AVDD) is still regulated by the ratio of R1 and
R2. Because some LX pulses are skipped, the ripple current
in the inductor will become bigger. Under the worst case, the
ripple current will be from 0 to the threshold of the current
limit. In turn, the bigger ripple current will increase the output
voltage ripple. Hence, it will need more output capacitors to
keep the output ripple at the same level. When the input
voltage equals, or is larger than, the output voltage, the
boost converter will stop switching. The boost converter is
not regulated any more, but the part will still be on and other
channels are still regulated.
Boost Converter Input Capacitor
An input capacitor is used to suppress the voltage ripple
injected into the boost converter. A ceramic capacitor with
capacitance larger than 10µF is recommended. The voltage
rating of input capacitor should be larger than the maximum
input voltage. Some capacitors are recommended in Table 2
for input capacitor.
TABLE 2. BOOST CONVERTER INPUT CAPACITOR
RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/25V
1210
TDK
C3225X7R1E106M
10µF/25V
1210
Murata
GRM32DR61E106K
Boost Inductor
The boost inductor is a critical part which influences the
output voltage ripple, transient response, and efficiency.
Values of 3.3µH to 10µH should be selected to match the
internal slope compensation. The inductor must be able to
handle the following average and peak current:
IO
I LAVG = ------------1–D
(EQ. 5)
ΔI L
I LPK = I LAVG + -------2
(EQ. 6)
Some inductors are recommended in Table 3.
TABLE 3. BOOST INDUCTOR RECOMMENDATION
When operating at the lower frequency option, 650kHz, the
potential increase in ripple current in the inductor can be
avoided by increasing the inductor by the same factor. This
allows the slope compensation in the boost feedback to
remain the same as the 1.3MHz case and this will maintain
stability of the converter over the widest operating range.
Operation at 650kHz allows boost operation down to lower
minimum duty cycles, where the output voltage required is
closer to the input voltage than can be achieved when the
12
INDUCTOR
6.8µH/
3APEAK
DIMENSIONS
(mm)
VENDOR
7.3x6.8x3.2
TDK
6.8µH/
2.9APEAK
7.6X7.6X3.0 Sumida
5.2µH/
4.55APEAK
10x10.1x3.8
PART NUMBER
RLF7030T-6R8N3R0
CDR7D28MNNP-6R8NC
Cooper
CD1-5R2
Bussmann
FN9287.1
November 2, 2007
ISL97652
Rectifier Diode (Boost Converter)
A high-speed diode is necessary due to the high switching
frequency. Schottky diodes are recommended because of
their fast recovery time and low forward voltage. The reverse
voltage rating of this diode should be higher than the
maximum output voltage. The rectifier diode must meet the
output current and peak inductor current requirements. The
following table is some recommendations for boost converter
diode.
TABLE 4. BOOST CONVERTER RECTIFIER DIODE
RECOMMENDATION
examined with an oscilloscope set to AC 100mV/div and the
amount of ringing observed when the load current changes.
Reduce excessive ringing by reducing the value of the
resistor in series with the VC pin capacitor.
AVDD Delay Switch
The ISL97652 integrates a PMOS disconnect switch for the
AVDD boost output to disconnect VIN from AVDD when the
EN2 input is not selected. When EN2 is taken high, the
PMOS FET is turned on to connect power to the display. The
CSUI capacitor provide soft-start control for the connection
of this switch.
DIODE
VR/IAVG
RATING
PACKAGE
SS23
30V/2A
SMB
Fairchild Semiconductor
The operation of the AVDD delay switch is controlled by
internal VDSOK and VDSHYS control signals which operate
as follows:
SL23
30V/2A
SMB
Vishay Semiconductor
During start-up (or during fault conditions):
VENDOR
VDSOK goes to 1 when V(SWI - SWO) becomes less than
~0.5V. This will turn-on the boost function.
Output Capacitor
The output capacitor supplies the load directly and reduces
the ripple voltage at the output. Output ripple voltage consists
of two components: the voltage drop due to the inductor ripple
current flowing through the ESR of output capacitor, and the
charging and discharging of the output capacitor.
IO
V O – V IN
1
V RIPPLE = I LPK × ESR + ------------------------ × -------------------- × ---f
V
C
O
AVDD
(EQ. 7)
s
For low ESR ceramic capacitors, the output ripple is
dominated by the charging and discharging of the output
capacitor. The voltage rating of the output capacitor should
be greater than the maximum output voltage.
Note: Capacitors have a voltage coefficient that makes their
effective capacitance drop as the voltage across then
increases. COUT in Equation 7 above assumes the effective
value of the capacitor at a particular voltage and not the
manufacturer's stated value, measured at zero volts.
The following table shows some selections of output
capacitors.
TABLE 5. BOOST OUTPUT CAPACITOR RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/25V
1210
TDK
C3225X7R1E106M
10µF/25V
1210
Murata
GRM32DR61E106K
Loop Compensation (Boost Converter)
The boost converter of ISL97652 can be compensated by a
RC network connected from VC pin to ground. CC = 4.7nF
and RC = 10k RC network is used in the demo board. A
higher resistor value can be used to lower the transient load
change AVDD overshoot - however, this may be at the
expense of stability to the loop.
The stability can be examined by repeatedly changing the
load between 100mA and a max level that is likely to be
used in the system being used. The AVDD voltage should be
13
VDSOK goes to 0 when VDS_pfet becomes greater than
~1.1V. This will turn-off the boost function.
The threshold voltages have a Vin dependence such that:
For Vin1 = 8V: VDSOK goes to 1 occurs at ~0.5V and
VDSOK goes to 0 occurs at ~1.1V.
For Vin1 =18.5V: VDSOK goes to1 occurs at ~1.13V and
VDSOK goes to 0 occurs at ~2.65V.
V(SWI - SWO) is the VDS voltage across the internal PFET
protection switch. If this voltage exceeds 1.1V for some
reason (e.g. under fault conditions or during start-up if
VMAIN rises faster than AVDD) the boost is turned-off to
allow the AVDD (SWO) potential to catch-up with VMAIN
(SWI).
VDSHYS is the VDS hysteresis level;
Once VDSOK goes to 1 the voltage V(SWI - SWO) then
needs to exceed 1.1V for VDSOK goes to 0.
During normal operation VDS will be ~Ron_PFET * Iload
(~ 0.18x2 = 0.36V for max AVDD load).
If a fault develops on AVDD, which causes VDS to exceed
1.1V, then the boost operation is interrupted by the internal
VDSOK goes to 0 signal and fault timers will start to operate
while the rising/falling character of AVDD is monitored.
AVDD Delay Switch Fault Operation
When enabled, the gate of the PFET is pulled down with a
30µA current, turning on the FET switch. The speed of this
turn-on can be controlled by placing a capacitor from SWI to
SUI. In normal operation the gate (and SUI pin) are pulled
down to 5V below SWI. The AVDD delay switch circuitry
constantly monitors both the current in the switch and the
voltage at SWO. If the current exceeds the current limit of
2A, the gate of the FET (and also the SUI pin) will be pulled
up to the correct level to limit the current to 2A. In this mode
the switch acts like a 2A current source. this current cannot
be maintained indefinitely due to the power dissipation on
FN9287.1
November 2, 2007
ISL97652
Feedback Resistors
chip. Therefore, three separate fault mechanisms are
operated.
1. The SWO output range is constantly monitored and
expected to rise if the PFET is in current limit. The rate of
rise at SWO can be calculated from the current limit and
the capacitance on SWO by using the equation
dV/dt = Ilimit/Cavdd. The SWO voltage range is split into
sections of approximately 0.7V such that every time the
output rises by this amount the circuit detects that the
voltage is rising. Should the circuit remain in current limit
for more than 100µs with no such rise taking place the
circuit will fault out. In this scenario, the PFET will
immediately switch itself off and the rest of the ISL97652
will later fault out due to the boost voltage at AVDD falling
away.
2. As well as monitoring any rise in the voltage at SWO, the
circuit also monitors any falls in this level. If the output
falls by more than a certain amount while it is in current
limit the circuit will fault out immediately. This amount
varies from about 1V to about 1.4V depending on the
output level before the fall. In this scenario, the PFET will
immediately switch itself off and the rest of the ISL97652
will later fault out due to the boost voltage falling away.
3. Once the ISL97652 has successfully sequenced the
boost on and the boost soft-start capacitor has charged
up, a third fault check is also added. After this point if the
PFET enters current limit for greater than the global
timeout of 40µs then the chip will fault out. In this scenario
the whole chip will be disabled with the PFET
immediately switched off.
Buck Converter
The buck converter is the step down converter, which
supplies the current to the logic circuit of the LCD system.
The ISL97652 integrates an 20V N-Channel MOSFET to
save cost and reduce external component count. In the
continuous current mode, the relationship between input
voltage and output voltage is as follows:
V LOGIC
---------------------- = D
V IN
(EQ. 8)
Where D is the duty cycle of the switching MOSFET.
Because D is always less than 1, the output voltage of buck
converter is lower than input voltage.
The peak current limit of buck converter is set to 2.5A, which
restricts the maximum output current (average) based on the
following equation:
I OMAX = 2.5A – ΔI PP
(EQ. 9)
Where ΔIPP is the ripple current in the buck inductor as the
following equation:
V LOGIC
ΔI PP = ---------------------- ⋅ ( 1 – D )
L ⋅ fs
(EQ. 10)
Where L is the buck inductor, fs is the switching frequency.
14
The buck converter output voltage is determined by the
following equation:
R 11 + R 12
V LOGIC = --------------------------- × V FBB
R 12
(EQ. 11)
Where R11 and R12 are the feedback resistors of buck
converter to set the output voltage. Current drawn by the
resistor network should be limited to maintain the overall
converter efficiency. The maximum value of the resistor
network is limited by the feedback input bias current and the
potential for noise being coupled into the feedback pin. A
resistor network in the order of 1kΩ is recommended.
Buck Converter Input Capacitor
The capacitor should support the maximum AC RMS current
which happens when D = 0.5 and maximum output current.
I ACRMS ( C IN ) =
(EQ. 12)
D ⋅ ( 1 – D ) ⋅ IO
Where Io is the output current of the buck converter. The
following table shows some recommendations for input
capacitor.
TABLE 6. INPUT CAPACITOR (BUCK) RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/16V
1206
TDK
C3216X7R1C106M
10µF/10V
0805
Murata
GRM21BR61A106K
22µF/16V
1210
Murata
C3225X7R1C226M
Buck Inductor
A 3.3µH to 10µH inductor is the good choice for the buck
converter. Besides the inductance, the DC resistance and
the saturation current are also the factor needed to be
considered when choosing buck inductor. Low DC
resistance can help maintain high efficiency, and the
saturation current rating should be 2.5A. Here are some
recommendations for buck inductor.
TABLE 7. BUCK INDUCTOR RECOMMENDATION
INDUCTOR
DIMENSIONS
(mm)
VENDOR
PART NUMBER
4.7µH/
2.7APEAK
5.7x5.0x4.7
Murata
LQH55DN4R7M01K
6.8µH/
3APEAK
7.3x6.8x3.2
TDK
RLF7030T-6R8M2R8
10µH/
2.4APEAK
12.95x9.4x3.0 Coilcraft
DO3308P-103
Rectifier Diode (Buck Converter)
A Schottky diode is recommended due to fast recovery and low
forward voltage. The reverse voltage rating should be higher
FN9287.1
November 2, 2007
ISL97652
than the maximum input voltage. The peak current rating is 2A,
and the average current should be as the following equation,
Regulated Charge Pump Controllers (VON and
VOFF)
I AVG = ( 1 – D )*I o
The ISL97652 includes 2 independent charge pumps (see
charge pump block and connection diagram). The negative
charge pump inverters the VSUP voltage and provides a
regulated negative output voltage. The positive charge pump
doubles or triples the VSUP voltage and provided a regulated
positive output voltage. The regulation of both the negative
and positive charge pumps is generated by internal
comparator that senses the output voltage and compares it
with the internal reference.
(EQ. 13)
Where Io is the output current of buck converter. The
following table shows some diode recommended.
TABLE 8. BUCK RECTIFIER DIODE RECOMMENDATION
DIODE
VR/IAVG
RATING
PACKAGE
PMEG2020EJ
20V/2A
SOD323F
Philips
Semiconductors
SS22
20V/2A
SMB
Fairchild
Semiconductor
VENDOR
The pumps use pulse width modulation to adjust the pump
period, depending on the load present. The pumps can
provide 30mA for VOFF and 20mA for VON.
Output Capacitor (Buck Converter)
Positive Charge Pump Design Consideration
Four 10µF or two 22µF ceramic capacitors are recommended
for this part. The overshoot and undershoot will be reduced
with more capacitance, but the recovery time will be longer.
The positive charge pump can drive multiple stages for 2X/
3X step up ratios, or higher. Internal switches (M1 and M2)
drive external steering diodes via the pump capacitor CP.
Figure 18A shows 2X configuration and Figure 18B shows
3X configuration. The output voltage is divided by feedback
resistors R7 and R8, which is then compared to the internal
reference via comparator A1. The maximum VON charge
pump current can be estimated from the following equations
assuming a 50% switching duty:
TABLE 9. BUCK OUTPUT CAPACITOR RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/6.3V
0805
TDK
C2012X5R0J106M
10µF/6.3V
0805
Murata
GRM21BR60J106K
22µF/6.3V
1210
TDK
C3216X5R0J226M
100µF/6.3V
1206
Murata
GRM31CR60J107M
PI Loop Compensation (Buck Converter)
The buck converter of ISL97652 can be compensated by a
RC network connected from VCB pin to ground. CCB = 4.7nF
and RCB = 10k RC network is used in the demo board. The
larger value resistor can lower the transient overshoot,
however, at the expense of stability of the loop.
I MAX ( 2x ) ∼ min of 50mA or
2 • V SUP – 2 • V DIODE ( 2 • I MAX ) – V ( V ON )
---------------------------------------------------------------------------------------------------------------------- • 0.95A
( 2 • ( R ONH + R ONL ) )
(EQ. 14)
I MAX ( 3x ) ∼ min of 50mA or
3 • V SUP – 4 • V DIODE ( 2 • I MAX ) – V ( V ON )
---------------------------------------------------------------------------------------------------------------------- • 0.95A
4 • ( R ONH + R ONL )
The stability can be optimized in a similar manner to that
described in the section on "PI Loop Compensation (Boost
Converter)”.
Bootstrap Capacitor (CB)
This capacitor is used to provide the supply to the high driver
circuitry for the buck MOSFET. The bootstrap supply is
formed by an internal diode and capacitor combination. A
470nF is recommended for ISL97652. A low value capacitor
can lead to overcharging and in turn damage the part.
If the load is too light, the on-time of the low side diode may
be insufficient to replenish the bootstrap capacitor voltage.
In this case, if VIN-VBUCK <1.5V, the internal MOSFET
pull-up device may be unable to turn-on until VLOGIC falls.
Hence, there is a minimum load requirement in this case.
The minimum load can be adjusted by the feedback
resistors to FBB.
15
FN9287.1
November 2, 2007
ISL97652
A2
C4
100pF
VSUP
VDC
FAULT
1.14V
FBP
C5
2.2nF
R8
10k
A1
R7
232k
1.265V
FOSC
STOP
VSUP
M2
CP
0.1µF
CLK
DRVP
D6
D7
VON (30V)
CON
1µF
PWM
CONTROL
EN
M1
GND
FIGURE 18A. VON FUNCTION DIAGRAM (VOLTAGE DOUBLER)
VSUP
CP
0.1µF
D6 D7
D6’
D7’
DRVP
VON (30V)
CON
1µF
CP’
0.1µF
CON’
1µF
FIGURE 18B. VOLTAGE TRIPLER
FIGURE 18.
In voltage doubler configuration, the maximum VON is as given by the following equation:
V ON_MAX(2x) = 2 • ( V SUP – V DIODE ) – 2 • I OUT • ( R ONH + R ONL )
(EQ. 15)
For Voltage Tripler using additional external diodes and capacitors (Figure 18B):
VON_MAX(3x) = 3 • V SUP – 4 • V DIODE – 2 • I OUT • ( R ONH + RONL )
(EQ. 16)
VON output voltage is determined by the following equation:
R7
V ON = V FBP × ⎛ 1 + --------⎞
⎝
R8⎠
(EQ. 17)
Negative Charge Pump Design Consideration
The negative charge pump consists of an internal switcher
M1, M2 which drives external steering diodes Dx and Dx via
a pump capacitor (CN) to generate the negative VOFF
supply. An internal comparator (A1) senses the feedback
voltage on FBN and turns on M1 for a period up to half a
CLK period to maintain V(FBN) in regulated operation at
0.5V. External feedback resistor R5 is referenced to VREF.
16
FN9287.1
November 2, 2007
ISL97652
VREF
A2
C3
100pF
VSUP
VDC
FAULT
0.53V
FBN
C2
820pF
R5
40.2k
A1
R6
453k
0.5V
FOSC
STOP
M2
CLK
DRVN
CN
0.1µF
D4
VOFF (-8V)
D3
PWM
CONTROL
EN
COFF
1µF
M1
GND
FIGURE 19. NEGATIVE CHARGE PUMP BLOCK DIAGRAM
The maximum VOFF output voltage of a single stage charge pump is:
V OFF_MAX ( 2x ) = – V SUP + V DIODE + 2 • I OUT • ( R ON ( NOUT )H + R ON ( NOUT )L )
(EQ. 18)
R5 and R6 in the Typical Application Diagram determine
VOFF output voltage.
(without the boost running) is large enough to satisfy the
regulated VOFF supply.
R6
R6
V OFF = V FBN • ⎛ 1 + --------⎞ – V REF • ⎛ --------⎞
⎝ R5⎠
⎝
R5⎠
Improving Charge Pump Noise Immunity
(EQ. 19)
Charge Pump Supply
The magnitude of the SUP supply will determine the charge
pump diode configuration; whether x2 or x3 for the positive
charge pump or x1 or x2 for the negative charge pump.
An independent charge pump supply pin 13 (SUP) is
provided and this may be connected to Vin, Vmain, AVDD or
some other suitable supply.
Note that if AVDD is chosen for the SUP supply, then a
potential fault-like interaction with the supply sequencing
and fault checking is present; when EN1 goes high (with
EN2 low), fault checking on the VOFF charge pump is
started by the voltage ramp on DEL1. If this pin reaches
~1.9V before VOFF is within 90% of it's regulation voltage
then the buck converter (Tcon bias) and Voff will be
continually re-started. This condition will arise if the SUP
supply has not been activated by EN2 going high before
DEL1 has reached 1.9V. One solution would be to increase
the capacitance on DEL1 to overlap enough in time with the
EN2 going high. This does have the disadvantage of
lengthening the fault detection time of the VOFF charge
pump under true fault conditions and it also lengthens the
initial VOFF turn-on time. Another solution would be to
supply SUP from Vmain as long as the magnitude of Vmain
17
Depending on PCB layout and environment, noise pick-up at
the FBP and FBN inputs, which may degrade load regulation
performance, can be reduced by the inclusion of capacitors
across the feedback resistors (e.g. in the Application
Diagram, C4 and C5 for the positive charge pump).
Set R7 • C4 = R8 • C5 with C4 ~ 100pF.
VON-SLICE Circuit Operation
The Von slice circuit functions as a three way multiplexer,
switching VGHM between ground, VGL and VGH (typ 1530V). Voltage selection is provided by digital inputs VDPM
(enable) and VFLK (control). HIGH to LOW delay and slew
control is provided by external components on pins CE and
RE respectively. The block diagram of the VON-SLICE
circuit is shown in Figure 3.
When VDPM is LOW, the block is disabled and VGHM is
grounded.
When VDPM is HIGH, VGHM is determined by VFLK; when
VFLK goes LOW, there is a delay controlled by the capacitor
attached to the CE pin, following which VGHM is driven to
VGL, with a slew rate controlled by the resistor attached to
the RE pin. Note that VGL is used only as a reference
voltage for an amplifier, thus does not have to source or sink
a significant DC current. When VFLK goes HIGH, VGHM is
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November 2, 2007
ISL97652
external capacitor to VREF. This creates a delay, equal to
CE*21300. For example, the delay time is ~10µs for 470pF
CE capacitor. At this point, VGHM begins to slew down from
VGH to VGL. The slew current is equal to
Isl = 300/(RE+5kΩ), and the dv/dt slew rate is Isl/Cload.
driven HIGH at a rate primarily controlled by the P1 switch
resistance (RONVGH) and the external capacitive load.
VGHM HIGH to LOW transitions are more complex; take the
case where the block is already enabled (VDPM is HIGH).
When VFLK is HIGH, pin CE is grounded. On the falling
edge of VFLK, a current is passed into pin CE to charge an
where Cload is the load capacitance applied to VGHM.
VGH
VGHM
VDPM
VGL VGL
x248
x248
VREF
RE
60µA
CE
VFLK
CONTROL
AND TIMING
FIGURE 20. VON-SLICE BLOCK DIAGRAM
18
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ISL97652
VGH
VGHM
VGL
SLOPE CONTROLLED
BY RE AND LOAD
CAPACITANCE
t
0
VFLK
0
t
TCE
DELAY TIME CONTROLLED BY CE
~1.94V
CE
~1.265V
t
0
FIGURE 21. VON-SLICE TIMING WAVEFORM
High Performance VCOM Amplifiers
The integrated high performance amplifiers are designed to
drive the VCOM plane in TFT-LCD displays. Under normal
operational conditions, the amplifiers are permanently
enabled when the AVIN supply is present. Under fault
conditions and with EN1 active, the temperature shut-down
(TOFF exceeded) will disable the amplifiers until the
temperature drops to TON. Temperature shut-down of the
amplifiers is disabled if EN1 is disabled.
The amplifiers integrated in to the ISL97652 feature high
output current of 50mA minimum and high slew rate of
50V/µs. Both inputs and outputs have rail-to-rail capability.
Start-Up Sequence Control
The ISL97652 features extensive start-up sequence control
options. Two enable pins and two delay control pins are
used to set the start-up sequence.
The EN1 enable pin controls the buck regulator and negative
charge pump controller. When EN1 goes H, the internal 5.3V
regulator starts up. Once the regulator output on pin 27
(VDC) exceeds it's UVLO threshold, the REF pin starts to
charge up to the normal output level. Once REF is within
15% of it's final value, the buck regulator will start to operate.
Note that if VREF moves more than 15% from it's target
value, all major functions will be disabled until REF returns to
it's normal range. This involves the chip going through the
normal start-up sequence from buck start-up onwards,
depending on the state of the enable signals EN1, EN2. The
soft-start time is set using the capacitor connected to SSB.
Once the output reaches 90% the DLY1 capacitor begins to
19
charge. Once the threshold is reached, the negative charge
pump will begin. Removing the DLY1 capacitor will cause the
negative charge pump to start immediately once the buck
regulator reaches 90% of the target value. The delay time
and soft-start times are determined using the following
equations:
V DL1
T DLY1 = C DL1 × -------------I DL1
(EQ. 20)
V SSB
T SSB = C SSB × --------------I
(EQ. 21)
SSB
The EN2 pin is used to control the boost and positive charge
pump circuits.Note that EN2 is ignored until the buck
converter has reached 90% of it's target value. When taken
high, the internal PFET is turned on to connect the input to
the AVDD output. A capacitor connected to SUI provides
control over the soft connect to limit inrush current. Next, the
boost converter starts to operate. The soft-start time for the
boost is set using the capacitor tied to the SS pin. Once the
output reaches 90% of the target value, the DLY2 timer
starts. Once completed, the positive VON charge pump
starts to operate. If CDL2 is not present, the VON charge
pump will start immediately once the boost is in regulation.
The delay time is determined using the following equation:
V DL2
T DLY2 = C DL2 × -------------I
(EQ. 22)
V SS
T SS = C SS × ----------I
(EQ. 23)
DL2
SS
FN9287.1
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ISL97652
Variations on the start-up sequence can be seen in Figures
22, 23 and 24.
The Gate pulse modulator is enabled when both of the
following conditions are met:
• VDPM is H
• VON is over 90% of it's target value.
TSSB
DLY2
EN1
DLY1
EN2
VTCON
TSS
VOFF
VMAIN
VIN - DIODE
VIN - 2 x DIODE
VMAIN - 2 x DIODE
VON
VIN - DIODE
AVDD
FIGURE 22. TIMING DIAGRAM 1
20
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November 2, 2007
ISL97652
TSSB
DLY2
EN1
DLY1
EN2
TSS
VTCON
VOFF
VIN - DIODE
VMAIN
VMAIN - 2 x DIODE
VIN - 2 x DIODE
VON
VIN - DIODE
AVDD
FIGURE 23. TIMING DIAGRAM 2
21
FN9287.1
November 2, 2007
ISL97652
EN2
DLY2
VDPM
VIN - DIODE
VIN - DIODE OR
VMAIN
VMAIN DIODE
VON
AVDD
VFLK
VGHM
FIGURE 24. TIMING DIAGRAM 3
Switching Frequency Control
Fault Detection
The ISL97652 can operate at either 650kHz or 1.3MHz
depending on the state of the FREQ pin. When connected to
GND, 650kHz is selected. When connected to VIN, 1.3MHz
is selected. Higher frequencies enable the selection of
smaller inductors and capacitors. Lower frequencies allow
closer input/output ratios to be supported. The charge pump
circuits switch at half the frequency selected.
The ISL97652 includes extensive fault handling circuitry,
which interacts with the start-up sequence circuitry if a fault
is detected.
Undervoltage Lockout
The integrated undervoltage lockout circuit is designed to
power down the TFT-LCD if the input voltage falls below a
preset threshold. The ISL97652 will not start if the input
voltage is below the UVLO threshold.
Over-Temperature Protection
An internal temperature sensor continuously monitors the
die temperature. In the event that the die temperature
exceeds the thermal trip point of +150°C, the device will shut
down. Operation with die temperatures between +125°C and
150°C can be tolerated for short periods of time, however, in
order to maximize the operating life of the IC, it is
recommended that the effective continuous operating
junction temperature of the die should not exceed +125°C.
22
During normal operation, if EN1 goes L, all major functions
are disabled immediately, including the 5V regulator. If EN2
goes L, but EN1 remains H, boost, VON and GPM are
disabled immediately. When EN1 and/or EN2 return H, the
start-up sequence restarts from the appropriate point.
If the over-temperature threshold (+150°C nominal) is
exceeded, or if VIN drops below the specified lower UVLO
limit, all major functions are disabled immediately, excluding
the 5.3V regulator. If/when the temperature drops below
+100°C, or VIN returns to a level above the upper UVLO
threshold the start-up sequence will re-commence by
enabling REF.
Timed “Faults”
The four ramp voltages, SSB, SS, DEL1 and DEL2 all ramp
linearly from 0V to approximately 2.7V, where they are
soft-clamped. The 2V thresholds of each are used to enable
timed fault checking on related blocks. Therefore, external
capacitor values should be chosen such that all major
FN9287.1
November 2, 2007
ISL97652
outputs are in regulation by the time this threshold is
reached. For example, SSB controls step-down regulator
fault checking, DEL1 controls VOFF fault checking, SS
controls step-up regulator and PFET fault checking, DEL2
controls VON and GPM fault checking. If a fault on any of the
major blocks is detected continuously for a predetermined
time interval (currently set to 63µs), when fault checking is
enabled for that function, the fault latch will be set. This
causes all major functions to be disabled immediately,
including the 5.3V regulator. Once VDC falls below its
internal UVLO limit (typically 3.6V), the FAULT latch is reset.
This will initiate an automatic restart. If the fault has been
cleared, the restart will be successful; if the fault persists, the
FAULT latch will again be set, and the cycle will repeat itself.
(Route the following tracks on the PGND (top) metal layer:
PGND1,2,3 [a single wide track] to CIN, Cout and CB, D5.
SW1,2 [a single wide track] to L1/D1, SWB1,2 [a single wide
track] to L2/D5.)
Buck, boost and VON circuits have fault thresholds at 90% of
target values.
Star Ground
The VOFF fault threshold is set at 125mV above the 0.5V
regulation point.
GPM fault detection is designed to detect a short circuit on
the output, by monitoring whether VGHM fails to pull up to
VGH on two consecutive FOSC clock periods.
The AVDD PFET also has fault checking, which will protect
the FET in the event of an output short circuit.
Note that the VCOM amplifiers are independently biased,
and are enabled at all times, except if an over-temperature
fault is detected. If this behavior is not desired, then there is
an option to power the VCOM amplifiers from AVDD, which
will keep them disabled until the boost is enabled.
Note also that it is possible to prevent timed fault checking
on any or all of the major functions, simply by externally
clamping SSB, SS, DEL1 and/or DEL2 to a voltage between
1.3V and 2V.
PCB Layout Procedure
To ensure the user gets the best chip performance with
minimum amount of PCB rework in the development phase,
the following PCB layout procedure is strongly
recommended.
PCB metal layers
Reserve the top PCB metal layer for direct power ground
(PGND) connections to the supply pins and switching
outputs (buck/boost/charge-pumps). The goal is to ensure
there are no VIAS in the boost and buck paths to the
smoothing capacitors. The top layer may also be used for
general routing of non-sensitive tracks as long as this does
not compromise the supply track widths which should be as
wide as possible.
Note that using VIAs in series with smoothing capacitors
(even if implemented as multiply parallel VIAs) increases the
effective high frequency ESR of the capacitors and WILL
cause degraded system operation.
23
Reserve the bottom (or an intermediate layer) for the signal
ground plane (SGND) and signal routing. It is recommended
that all feedback inputs and any other sensitive tracks are
routed to the SGND layer using a VIAs as close to the chip
as possible. This prevents unwanted interference pick-up
and allows the supply smoothing capacitors to be places as
close to the chip as possible.
(Route the following tracks on the SGND (bottom or
intermediate) metal layer: FB, FBB, FBP, FBN, POS1,2, )
A star ground system is where a number of different grounds
(e.g. PGND, SGND) come together at a single location
which then becomes the reference ground point for the
system as a whole. Star grounding ensures minimum
interference between different functions in a system.
Practically, it is difficult to achieve an ideal (single location)
ground point due to the physical dimensions of the chip,
smoothing capacitors and track routing, however, the
exposed die plate and the area immediately next to the
PGND1,2,3 pins is defined as the star ground for this chip.
The negative smoothing capacitor terminals of: Cout, CB
and CIN must be located as close as possible to the
PGND1,2,3 pins. The smoothing capacitors for VIN, Cout
and CB come as a block of three or four capacitors with
(usually) one small capacitor whose role is to reduce the
total effective ESR of the capacitors. It is recommended that
the small capacitor and at least one of the large capacitors
from each capacitor block is placed as physically close to the
chip PGND pins as possible. The other capacitors from each
block can be placed a little further away, if necessary.
Exposed Die plate connection
The exposed die plate connection to the underside of the
chip must directly connect the PGNDs (pins 34, 35, 36) and
AGND (pin 15) with an equivalent area of metal. The other
ground pins (amplifier OGND and charge pump GND pins
may also be connected to the die plate.
The exposed die plate connection must have multiple VIAs
(use a 4x4 array) connecting the top metal PGND layer to
the bottom SGND metal layer. The bottom SGND metal area
around the VIA array should be maximized in order to keep
the thermal resistance of the chip and PCB system as low as
possible. This will optimise operation at high currents or in
high ambient temperature applications.
Order of component placement
The order of component placement should be as follows.
This procedure minimizes the high current PGND and supply
track impedance to the chip pins.
FN9287.1
November 2, 2007
ISL97652
1). Cout, Cin, CB: get these components as close to
PGND1,2,3 as possible and use wide tracks on the top
PGND layer with no vias.
2). L1, D1, L2, D5: get these components as close to the
chip pins as possible (having observed 1/) and use wide
tracks on the top PGND layer with no vias.
3). Feedback resistor networks connected to FB, FBB, FBP,
FBN, POS1,2: keep tracks as short as possible (having first
observed 1/ and 2/). Routing on the SGND layer should be
used. Avoid routing this tracks under switching tracks on the
top surface.
4). All other components: keep all switching output tracks
(SW1,2, SWB1,2, CBOOT, DRVP, DRVN, VGHM, VFLK) on
the PGND layer shielded from adjacent tracks.
Evaluation PCB
A two layer evaluation PCB is available which follows the
above procedure and may be useful as a reference to guide
the PCB layout engineer. For example, the smoothing
capacitor positive rail to PVin does contain vias in series;
however, a small capacitor has been used directly at the
PVin pins which overcomes the ESR objection.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
24
FN9287.1
November 2, 2007
ISL97652
Package Outline Drawing
L48.7x7
48 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 4, 10/06
4X 5.5
7.00
A
44X 0.50
B
37
6
PIN 1
INDEX AREA
6
PIN #1 INDEX AREA
48
1
7.00
36
4. 30 ± 0 . 15
12
25
(4X)
0.15
13
24
0.10 M C A B
48X 0 . 40± 0 . 1
TOP VIEW
4 0.23 +0.07 / -0.05
BOTTOM VIEW
SEE DETAIL "X"
( 6 . 80 TYP )
(
0.10 C
BASE PLANE
0 . 90 ± 0 . 1
4 . 30 )
C
SEATING PLANE
0.08 C
SIDE VIEW
( 44X 0 . 5 )
C
0 . 2 REF
5
( 48X 0 . 23 )
( 48X 0 . 60 )
0 . 00 MIN.
0 . 05 MAX.
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES:
1. Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3. Unless otherwise specified, tolerance : Decimal ± 0.05
4. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5. Tiebar shown (if present) is a non-functional feature.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 indentifier may be
either a mold or mark feature.
25
FN9287.1
November 2, 2007