ON BC638 High current transistors(pnp silicon) Datasheet

BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
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COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
BC636
BC638
BC640
Collector-Base Voltage
VCBO
BC636
BC638
BC640
Emitter-Base Voltage
1
EMITTER
Vdc
–45
–60
–80
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–0.5
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1
2
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to
+150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
3
BASE
Vdc
–45
–60
–80
3
CASE 29
TO–92
STYLE 14
THERMAL CHARACTERISTICS
Characteristic
 Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
ORDERING INFORMATION
1
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92
2000/Ammo Pack
BC636–16ZL1
TO–92
2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92
2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92
2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box
Publication Order Number:
BC636/D
BC636, BC636–16, BC638, BC640, BC640–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
–45
–60
–80
—
—
—
—
—
—
–45
–60
–80
—
—
—
—
—
—
–5.0
—
—
Vdc
—
—
—
—
–100
–10
nAdc
µAdc
25
40
100
40
40
100
25
—
—
—
—
—
—
—
—
250
250
160
160
250
—
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CEO
BC636
BC638
BC640
Vdc
V(BR)CBO
BC636
BC638
BC640
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
Vdc
ICBO
ON CHARACTERISTICS (1)
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
hFE
BC636
BC636–16
BC638
BC640
BC640–16
(IC = –500 mA, VCE = –2.0 V)
—
Collector–Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
—
–0.25
–0.5
–0.5
—
Vdc
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
—
—
–1.0
Vdc
fT
—
150
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
9.0
—
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
110
—
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
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2
BC636, BC636–16, BC638, BC640, BC640–16
500
-1000
-200
-100
-50
VCE = -2 V
SOA = 1S
-B
PD TA 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
-500
PD TC 25°C
-20
-10
-5
-2
-1
-1
BC636
BC638
BC640
PD TA 25°C
PD TC 25°C
200
-A
50
20
-2 -3 -4 -5 -7 -10
-20 -30-40 -50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-L
100
-1
-3
-5
-300 -500 -1000
Figure 2. DC Current Gain
500
-1
300
V, VOLTAGE (VOLTS)
-0.8
VCE = -2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -2 V
-0.6
-0.4
-0.2
VCE(sat) @ IC/IB = 10
20
-1
-10
-100
IC, COLLECTOR CURRENT (mA)
0
-1000
-100
-10
IC, COLLECTOR CURRENT (mA)
-1
Figure 3. Current Gain Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
-0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)
f,
T CURRENT-GAIN
BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
-10
-30 -50 -100
IC, COLLECTOR CURRENT (mA)
-1.0
VCE = -2 VOLTS
∆T = 0°C to +100°C
-1.6
-2.2
θV for VBE
-1
-3
-5
-10
-30 -50 -100
IC, COLLECTOR CURRENT (mA)
-300 -500 -1000
Figure 5. Temperature Coefficients
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3
-1000
BC636, BC636–16, BC638, BC640, BC640–16
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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4
BC636/D
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