ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 24 ID IDP Drain Current (Pulse) Allowable Power Dissipation V ±12 V 10 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8651R-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 5 WV 2.3 4 1 0.65 0.9 0.25 Lot No. TL Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7 ECH8651R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 24 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=5A 5.5 9.5 RDS(on)1 ID=5A, VGS=4.5V 7 10.5 14 mΩ RDS(on)2 ID=5A, VGS=4.0V 7.2 11 15 mΩ RDS(on)3 ID=5A, VGS=3.1V 7.5 12.5 17.5 mΩ RDS(on)4 ID=2.5A, VGS=2.5V 9 15 21 mΩ 1 μA ±10 μA 1.3 V S Turn-ON Delay Time td(on) 300 ns Rise Time 1000 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=10V, ID=10A 4000 ns 2500 ns 24 nC 2 nC 4.5 IS=10A, VGS=0V 0.77 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=5A RL=2Ω VIN D PW=10μs D.C.≤1% Rg G P.G VOUT 50Ω S ECH8651R Rg=1kΩ Ordering Information Device ECH8651R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1010-2/7 ECH8651R ID -- VDS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4V 1.5V 7 4.5V Drain Current, ID -- A 8 2.5 3.1V 9 6 5 4 3 2 1 VGS=1V 0 0 0.1 0.2 0.3 0.4 V GS= 5 0 --50 0 50 100 150 6 8 VDS=10V 7 C 5° 5 = Ta --2 75 25 3 °C °C 2 2 3 5 7 2 1.0 3 5°C 25° C --25 °C 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDD=10V VGS=4V tf 2 tr 1000 7 5 td(on) 3 2 2 Drain Current, ID -- A 2.5 2.0 1.5 1.0 0.5 0 20 Total Gate Charge, Qg -- nC 25 30 IT13296 3 5 7 2 1.0 3 5 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 7 10 IT13295 ASO 2 3.0 15 3 Drain Current, ID -- A 3.5 10 5 td (off) IT13152 VDS=10V ID=10A 7 10 IT13151 SW Time -- ID 100 0.1 0.9 VGS -- Qg 4.5 5 Drain Current, ID -- A Switching Time, SW Time -- ns 1.0 7 5 3 2 10 IT13149 | yfs | -- ID 7 Ta= 7 Source Current, IS -- A 4 1000 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V 2 IT13150 VGS=0V 5 5 1.0 0.1 IS -- VSD 0 10 Gate-to-Source Voltage, VGS -- V 200 Ambient Temperature, Ta -- °C 4.0 5.0A 15 0 Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10 ID=2.5A 20 10 A =2.5 , ID V 5 . =2 =5A , ID VGS V 1 . =3 5A VGS , I D= 4.5V = VGS 5A = I 4.0V, D 15 25 IT13148 25 20 30 0 RDS(on) -- Ta 30 0.001 0.1 Ta=25°C 35 0.5 Drain-to-Source Voltage, VDS -- V 10 7 5 3 2 RDS(on) -- VGS 40 V 10 IDP=60A ID=10A 10 DC Operation in this area is limited by RDS(on). PW≤10μs 10 0μ 1m s s 10 ms 0m s op era 0.1 7 Ta=25°C 5 Single pulse 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 tio n 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13390 No. A1010-3/7 ECH8651R PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 ss 1u 0.8 Di ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13154 No. A1010-4/7 ECH8651R Embossed Taping Specification ECH8651R-TL-H No. A1010-5/7 ECH8651R Outline Drawing ECH8651R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1010-6/7 ECH8651R Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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