Micross LS5909 N-channel jfet Datasheet

LS5909
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
The LS5909 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
The hermetically sealed TO-78 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
LS5909 Benefits:
ƒ
ƒ
ƒ
ƒ
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Breakdown Voltage
40
BVGGO
Gate‐To‐Gate Breakdown
40
TRANSCONDUCTANCE
YfSS
Full Conduction
70
YfS
Typical Operation
50
|YFS1‐2 / Y FS|
Mismatch
‐‐
DRAIN CURRENT
IDSS
Full Conduction
60
|IDSS1‐2 / IDSS|
Mismatch at Full Conduction
‐‐
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
0.6
VGS(on)
Operating Range
‐‐
GATE CURRENT
‐IGmax.
Operating
‐‐
‐IGmax.
High Temperature
‐‐
‐IGSSmax.
At Full Conduction
‐‐
‐IGSSmax.
High Temperature
‐‐
IGGO
Gate‐to‐Gate Leakage
‐‐
OUTPUT CONDUCTANCE
YOSS
Full Conduction
‐‐
YOS
Operating
‐‐
|YOS1‐2|
Differential
‐‐
COMMON MODE REJECTION
CMR
‐20 log |∆VGS1‐2/∆VDS|
‐‐
CMR
‐20 log |∆VGS1‐2/∆VDS|
‐‐
NOISE
NF
Figure
‐‐
en
Voltage
‐‐
CAPACITANCE
CISS
Input
‐‐
CRSS
Reverse Transfer
‐‐
CDD
Drain‐to‐Drain
‐‐
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| VGS1‐2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
Vp = 2V TYP.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
40V
‐VDSO
Drain to Source Voltage
40V
‐IG(f)
Gate Forward Current
10mA
‐IG
Gate Reverse Current
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air – Total
40mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| VGS1‐2 / T| max.
DRIFT VS.
40
µV/°C
VDG=10V, ID=30µA
TEMPERATURE
TA=‐55°C to +125°C
| V GS1‐2 | max.
OFFSET VOLTAGE
15
mV
VDG=10V, ID=30µA
TYP.
60
‐‐
MAX.
‐‐
‐‐
UNITS
V
V
CONDITIONS
VDS = 0
ID=1nA
IG= 1nA
ID = 0
IS= 0
300
100
1
500
200
5
µmho
µmho
%
VDG= 10V
VDG= 10V
400
2
1000
5
µA
%
VDG= 10V
VGS= 0V
2
‐‐
4.5
4
V
V
VDS= 10V
VDS=10V
ID= 1nA
ID=30µA
‐‐
‐‐
‐‐
‐‐
1
1
1
2
5
‐‐
pA
nA
pA
nA
pA
‐‐
0.1
0.01
5
0.1
0.1
µmho
90
90
‐‐
‐‐
dB
‐‐
20
1
70
dB
nV/√Hz
‐‐
‐‐
‐‐
3
1.5
0.1
pF
VGS= 0V
ID= 30µA
Click To Buy
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-78 (Bottom View)
f = 1kHz
f = 1kHz
VDG= 10V ID= 30µA
TA= +125°C
VDS =0V VGS= 20V
TA= +125°C
VGG= 20V
VDG= 10V
VDG= 10V
VGS= 0V
ID=30µA
∆VDS = 10 to 20V
ID=30µA
∆VDS = 5 to 10V
ID=30µA
VDS= 10V VGS= 0V
RG= 10MΩ
f= 100Hz
NBW= 6Hz
VDG=10V ID=30µA f=10Hz NBW=1Hz
VDS= 10V
VGS= 0V
f= 1MHz
VDG = 20V ID=30µA
Micross Components Europe
Available Packages:
LS5909 in TO-78
LS5909 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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