NTD23N03R Power MOSFET 23 Amps, 25 Volts, N−Channel DPAK Features • • • • • • Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 25 V 32 m 23 A N−CHANNEL D MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit G Drain−to−Source Voltage VDSS 25 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Thermal Resistance, Junction−to−Case Total Power Dissipation @ T C = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C, Limited by Package − Single Pulse RJC PD 5.6 22.3 °C/W W MARKING DIAGRAMS ID ID 23 17.1 A A 4 Drain IDM 40 A Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RJA 76 °C/W PD ID 1.64 4.5 W A Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RJA 110 °C/W PD ID 1.14 3.8 W A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 1 2 3 DPAK CASE 369AA (Surface Mounted) STYLE 2 AYWW T23 N03 4 2 1 3 Drain Gate Source 4 Drain 4 1 2 DPAK−3 CASE 369D (Straight Lead) STYLE 2 AYWW T23 N03 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds S 3 1 2 3 Gate Drain Source T23N03 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 4 1 Publication Order Number: NTD23N03R/D NTD23N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max 25 − 28 − − − − − − − 1.0 10 − − ±100 1.0 − 1.8 − 2.0 − − − 50.3 32.3 60 45 − 13 − Ciss − 225 − Coss − 108 − Crss − 48 − td(on) − 2.0 − tr − 14.9 − td(off) − 9.9 − tf − 2.0 − QT − 3.76 − Q1 − 1.7 − Q2 − 1.6 − − − 0.87 0 87 0.74 1.2 1 2 − trr − 8.7 − ta − 5.2 − tb − 3.5 − QRR − 0.003 − Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(br)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 6 Adc) Vdc mV/°C m gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance ((VDS = 20 Vdc,, VGS = 0 V,, f = 1 MHz)) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 ) Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 6 Adc, VDS = 10 Vdc) (Note 3) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 6 Adc, VGS = 0 Vdc) (Note 3) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 6 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns C NTD23N03R 20 4.5 V 8V 6V 16 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 20 10 V 4V 5V 3.5 V 12 8 3V 4 VGS = 2.5 V 0 2 4 6 12 8 TJ = 25°C 4 10 8 TJ = −55°C TJ = 125°C 0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.20 VGS = 10 V 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 TJ = −55°C 0 4 0 8 12 16 20 VGS = 4.5 V 0.16 0.12 TJ = 125°C 0.08 TJ = 25°C 0.04 TJ = −55°C 0 0 4 8 12 16 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Temperature 20 10,000 1.8 1.6 6 0.20 ID, DRAIN CURRENT (AMPS) VGS = 0 V ID = 6 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE () 16 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 1.4 1.2 1 1000 TJ = 150°C TJ = 125°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 25 400 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTD23N03R TJ = 25°C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) Ciss 300 Crss Ciss 200 Coss 100 Crss 0 10 VGS 0 VDS 5 5 10 15 20 VGS 6 QT 4 Q2 Q1 2 ID = 6 A TJ = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 6 A VGS = 10 V tr td(off) 10 td(on) tf 1 VGS = 0 V 8 6 4 TJ = 150°C 2 TJ = 25°C 0 1 10 100 0 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 ID, DRAIN CURRENT (AMPS) t, TIME (ns) 8 VGS = 20 V SINGLE PULSE TC = 25°C 10 10 s 100 s 1 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1.0 NTD23N03R r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 D = 0.5 0.2 1 0.1 P(pk) 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail NTD23N03RG DPAK (Pb−Free) 75 Units/Rail NTD23N03R−1 DPAK−3 75 Units/Rail DPAK (Pb−Free) 75 Units/Rail DPAK 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel Device NTD23N03R NTD23N03R−1G NTD23N03RT4 NTD23N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD23N03R PACKAGE DIMENSIONS DPAK CASE 369AA−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F J L R S U V Z 3 U F J L D STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.033 0.045 0.018 0.023 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.88 0.46 0.61 0.83 1.14 0.46 0.58 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD23N03R PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− NTD23N03R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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