APTDF100H20G Diode Full Bridge Power Module VRRM = 200V IC = 100A @ Tc = 80°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits - Absolute maximum ratings Symbol VR VRRM IF(A V) Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Duty cycle = 50% Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms TC = 25°C TC = 80°C TC = 45°C TC = 45°C Max ratings Unit 200 V 145 100 145 500 A June, 2006 + • • • • • • AC1 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H20G – Rev 1 • AC2 APTDF100H20G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr IF = 100A VR = 133V di/dt = 200A/µs Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current IF = 100A VR = 133V di/dt=1000A/µs Tj = 25°C 39 Tj = 25°C Tj = 125°C Tj = 25°C 60 110 200 Tj = 125°C Tj = 25°C 840 6 Tj = 125°C 15 Tj = 125°C Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 To Heatsink M5 µA pF Max Unit ns ns nC A 80 ns 1.91 µC 44 A Typ Max 0.55 150 125 100 4.7 160 Unit °C/W V °C N.m g June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Unit V 250 500 Min Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Max 1.1 400 Test Conditions IF=1A,VR=30V di/dt = 100A/µs Typ 1.0 1.4 0.9 www.microsemi.com 2-4 APTDF100H20G – Rev 1 Reverse Recovery Time Min VR = 200V Dynamic Characteristics trr Test Conditions IF = 100A IF = 200A IF = 100A Tj = 125°C Tj = 25°C VR = 200V Tj = 125°C APTDF100H20G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 250 200 150 TJ =25°C TJ=150°C 100 TJ=125°C TJ=-55°C 50 0 0.0 0.5 1.0 1.5 T J=125°C VR=133V 100 A 100 130 A 80 50 A 60 40 2.0 0 200 100 A TJ=125°C VR=133V 1.75 130 A 1.50 50 A 1.25 1.00 0.75 0.50 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 2.00 600 800 1000 1200 IRRM vs. Current Rate of Charge 50 T J=125°C V R=133V 40 100 A 130 A 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 3200 2800 Duty Cycle = 0.5 TJ =150°C 125 2400 2000 1600 1200 100 June, 2006 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 75 50 800 25 400 0 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 25 50 75 100 125 150 Case Temperature (°C) 3-4 APTDF100H20G – Rev 1 IF, Forward Current (A) Trr vs. Current Rate of Charge 120 300 APTDF100H20G SP4 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H20G – Rev 1 June, 2006 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :