MOTOROLA MUN2131T1 Pnp silicon bias resistor transistor Datasheet

Order this document
by MUN2111T1/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
Motorola Preferred Devices
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
PNP SILICON
BIAS RESISTOR
TRANSISTOR
• Simplifies Circuit Design
• Reduces Board Space
PIN3
COLLECTOR
(OUTPUT)
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
3
R1
2
PIN2 R2
BASE
(INPUT)
1
PIN1
EMITTER
(GROUND)
CASE 318D–03, STYLE 1
(SC–59)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Base Voltage
Rating
VCBO
50
Vdc
Collector–Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
PD
*200
1.6
mW
mW/°C
RθJA
625
°C/W
TJ, Tstg
– 65 to +150
°C
TL
260
10
°C
Sec
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
Small–Signal
Transistors, FETs and Diodes Device Data
Motorola
Motorola, Inc.
1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
—
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
—
500
nAdc
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
—
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
—
—
—
—
—
—
—
—
—
—
—
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
—
—
—
—
—
—
—
—
—
—
—
—
0.25
0.25
0.25
0.25
0.25
0.25
MUN2131T1
—
—
0.25
MUN2116T1
MUN2132T1
MUN2134T1
—
—
—
—
—
—
0.25
0.25
0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5.0 mA)
(IC = 10 mA, IB = 1.0 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
VCE(sat)
Vdc
VOL
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
Input Resistor
Resistor Ratio
Symbol
Min
Typ
Max
Unit
VOH
4.9
—
—
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kΩ
R1/R2
0.8
0.17
—
0.8
0.055
0.38
1.0
0.21
—
1.0
0.1
0.47
1.2
0.25
—
1.2
0.185
0.56
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2111T1/MUN2112T1/MUN2113T1
MUN2114T1
MUN2115T1/MUN2116T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
– 50
RθJA = 625°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2111T1
IC/IB = 10
TA = –25°C
25°C
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA = 75°C
25°C
100
10
80
–25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
2
1
0
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
100
TA = –25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 5. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1000
10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2112T1
IC/IB = 10
TA = –25°C
25°C
1
75°C
0.1
0.01
VCE = 10 V
TA = 75°C
25°C
–25°C
100
10
0
20
40
60
IC, COLLECTOR CURRENT (mA)
1
80
10
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
3
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
TA = –25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
IC, COLLECTOR CURRENT (mA)
2
1
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
1
1000
IC/IB = 10
TA = –25°C
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2113T1
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
–25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
Cob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
100
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = 75°C
–25°C
10
1
0.1
0.01
0.001
Figure 14. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2114T1
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
–25°C
120
100
80
60
40
20
0
80
TA = 75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
TA = 75°C
IC, COLLECTOR CURRENT (mA)
4
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
50
Figure 19. Output Capacitance
25°C
–25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
TA = –25°C
V in , INPUT VOLTAGE (VOLTS)
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 22. Inexpensive, Unregulated Current Source
7
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.098–0.118
2.5–3.0
0.094
2.4
0.039
1.0
0.031
0.8
inches
mm
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad
size. This can vary from the minimum pad size for soldering
to the pad size given for maximum power dissipation. Power
dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
RθJA, the thermal resistance from the device junction to
ambient; and the operating temperature, TA . Using the
values provided on the data sheet, PD can be calculated as
follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD =
150°C – 25°C
= 200 milliwatts
625°C/W
The 625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
8
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SC–59 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 23 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177 –189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 6 STEP 7
STEP 5
STEP 4
VENT COOLING
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
205° TO 219°C
“SPIKE”
“SOAK”
PEAK AT
170°C
SOLDER JOINT
160°C
150°C
150°C
140°C
100°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 23. Typical Solder Heating Profile
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
DIM
A
B
C
D
G
H
J
K
L
S
B
1
D
G
J
C
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
H
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
2.50
3.00
CASE 318D–03
ISSUE E
SC–59
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
10
◊
*MUN2111T1*
Motorola Small–Signal Transistors, FETs and Diodes MUN2111T1/D
Device Data
Similar pages