IRF IRHMS67264 Radiation hardened power mosfet thru-hole (low-ohmic to-254aa) Datasheet

PD-96991
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67264
250V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHMS67264 100K Rads (Si) 0.041Ω
IRHMS63264 300K Rads (Si) 0.041Ω
ID
45A
45A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45
28.5
180
208
1.67
±20
251
45
20.8
4.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
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1
06/28/05
IRHMS67264
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
VGS = 0V, ID = 1.0mA
—
0.31
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.041
Ω
2.0
37
—
—
—
—
—
—
4.0
—
10
25
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
220
50
70
35
70
80
15
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 12V, ID = 28.5A Ã
Ω
BVDSS
µA
nA
nC
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 28.5A Ã
VDS = 200V ,VGS = 0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 125V
VDD = 125V, ID = 45A
VGS =12V, RG = 2.35Ω
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
6847
933
12
0.48
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
45
180
1.2
700
14.3
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 45A, VGS = 0V Ã
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67264
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Sourcee On-State „
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
„
Units
Test Conditions ˆ
Min
Max
250
2.0
—
—
—
—
4.0
100
-100
10
µA
VGS = 0V, ID = 1.0mA
V GS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS= 0V
—
0.041
Ω
VGS = 12V, ID = 28.5A
—
0.041
Ω
VGS = 12V, ID = 28.5A
—
1.2
V
VGS = 0V, ID = 45A
V
nA
Part numbers IRHMS67264 and IRHMS63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-17V
-20V
43
1217
112
250
250
250
250
100
50
Xe
Au
59
90
823
1480
66
80
250
75
250
75
250
-
50
-
-
-
VDS
Ag
300
250
200
150
100
50
0
Ag
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS67264
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
1000
Pre-Irradiation
5.0V
10
60µs PULSE WIDTH
Tj = 25°C
1
100
5.0V
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3.0
T J = 150°C
100
T J = 25°C
VDS = 50V
15
60µs PULSE WIDTH
10
5
5.5
6
6.5
7
7.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig 2. Typical Output Characteristics
1000
4
10
VDS , Drain-to-Source Voltage (V)
ID = 45A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
14000
20
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
8000
Ciss
6000
Coss
4000
Crss
2000
0
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
1000
100
T J = 150°C
T J = 25°C
1
0.1
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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250
1.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
1
0.1
0.4
200
100
VGS = 0V
0.2
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
VDS = 200V
VDS = 125V
VDS = 50V
ID = 45A
VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
IRHMS67264
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHMS67264
Pre-Irradiation
50
RD
VDS
VGS
ID, Drain Current (A)
40
D.U.T.
RG
30
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
P DM
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS67264
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
500
TOP
400
BOTTOM
ID
20.1A
28.5A
45A
300
200
100
0
25
V(BR)DSS
50
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHMS67264
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.25 mH
Peak IL = 45A, VGS =12V
 ISD ≤ 45A, di/dt ≤ 1407A/µs,
VDD ≤ 250V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt V DS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES:
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2005
8
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