IXYS IXFB44N100Q3 Hiperfet power mosfet q3-class Datasheet

Advance Technical Information
IXFB44N100Q3
HiperFETTM
Power MOSFET
Q3-Class
VDSS
ID25
RDS(on)
trr
=
=
≤
≤
1000V
44A
Ω
220mΩ
300ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
PLUS264TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
44
A
110
A
TC = 25°C
44
A
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
PD
TC = 25°C
1560
W
G
D
S
G = Gate
S = Source
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6mm (0.062 in.) from Case for 10s
300
°C
TSOLD
Plastic Body for 10s
260
°C
FC
Mounting Force
30..120/6.7..27
N/lb.
Weight
10
g
D
= Drain
Tab = Drain
Features
z
z
TJ
TJM
Tstg
Tab
z
z
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
z
High Power Density
Easy to Mount
Space Savings
Applications
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
z
z
V
6.5
V
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
±200 nA
TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
50 μA
3 mA
220 mΩ
DS100307(03/11)
IXFB44N100Q3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
26
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
43
S
13.6
nF
1046
pF
86
pF
0.12
Ω
48
ns
30
ns
66
ns
28
ns
264
nC
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0.5Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
PLUS264TM (IXFB) Outline
76
nC
110
nC
0.08 °C/W
RthJC
RthCS
0.13
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min.
Typ.
Max.
44
A
Repetitive, Pulse Width Limited by TJM
176
A
IF = IS, VGS = 0V, Note 1
1.4
V
IF = 22A, -di/dt = 100A/μs
2.1
16.2
VR = 100V, VGS = 0V
300 ns
μC
A
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB44N100Q3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
45
90
VGS = 10V
40
35
70
30
8V
60
ID - Amperes
ID - Amperes
VGS = 10V
9V
80
25
20
15
50
40
8V
30
10
20
7V
5
10
6V
0
0
1
2
3
4
5
6
7
7V
0
8
9
10
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
45
3.2
VGS = 10V
8V
40
VGS = 10V
2.8
R DS(on) - Normalized
35
ID - Amperes
30
25
7V
20
15
2.4
I D = 44A
2.0
I D = 22A
1.6
1.2
10
6V
5
0.8
5V
0
0
5
10
15
0.4
20
25
-50
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
50
2.8
VGS = 10V
2.6
45
TJ = 125ºC
2.4
40
35
2.2
ID - Amperes
R DS(on) - Normalized
-25
VDS - Volts
2.0
1.8
1.6
1.4
30
25
20
15
TJ = 25ºC
1.2
10
1.0
5
0
0.8
0
10
20
30
40
50
60
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
70
80
90
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFB44N100Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
80
60
70
60
50
25ºC
g f s - Siemens
ID - Amperes
TJ = - 40ºC
40
TJ = 125ºC
25ºC
30
- 40ºC
20
50
40
125ºC
30
20
10
10
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
10
20
VGS - Volts
40
50
60
70
200
240
280
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
140
9
VDS = 500V
8
I G = 10mA
I D = 22A
120
100
7
VGS - Volts
IS - Amperes
30
80
60
TJ = 125ºC
6
5
4
3
40
TJ = 25ºC
2
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
40
VSD - Volts
80
120
160
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100,000
f = 1 MHz
RDS(on) Limit
1ms
100µs
25µs
100
ID - Amperes
Capacitance - PicoFarads
Ciss
10,000
Coss
1,000
100
10
1
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
10
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFB44N100Q3
Fig. 13. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N100Q3(Q9)03-04-11
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