SIGNAL BIDIRECTIONAL DIAC DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts. These diacs are intended for use in thyristors phase control, circuits for lamp dimming, universal motor speed control, and heat control R-1 DO-35(GLASS) 0.075(1.9) MAX. DIA. 0.102(2.6) 0.091(2.3) DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. 1.083(27.5) MIN. 0.020(0.52) MAX. DIA. DEC's DB3/DB4 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's 0.787(20.0) MIN. 0.126(3.2) 0.106(2.7) 0.025(0.65) 0.021(0.55) DIA. 0.787(20.0) MIN. Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Pc ITRM TSTG/TJ Value Parameters Symbols DB4 DB3 Power Dissipation on Printed Circuit(L=10mm) TA=50℃ Repetitive Peak on-state Current tp=10μs F=100Hz 150 2.0 Storage and Operating Junction Temperature Units mW 2.0 -40 to +125/-40 to 110 A ℃ Electrical characteristics Symbols VBO |+VBO|| - VBO| Parameters Value Test Conditions DB3 DB4 Units 28 32 36 35 40 45 V Breakover Voltage (Note 2) C=22nF(Note2) See diagram 1 Min Typ Max Breakover Voltage Symmetry C=22nF(Note2) See diagram 1 Max ±3 V △I=(IBO to IF=10mA) See diagram 1 Min 5 V |±△V| Dynamic Breakover Voltage (Note 1) VO IBO tr Output Voltage (Note 1) See diagram 2 Min 5 V Breakover Current (Note 1) C=22nF(Note2) Max 100 μA See diagram 3 Typ 1.5 μS VB=0.5 VBO max see diagram 1 Max 10 μA IB Rise Time (Note 1) Leakage Current (Note 1) Notes: (1) Electrical characteristics applicable in both forward and reverse directions (2) Connected in parallel with the devices RATINGS AND CHARACTERISTIC CURVES DB3/DB4 DIAGRAM 1 : Current-voltage characteristics DIAGRAM 2 : Test circuit for output voltage +IF 10mA 500KW 10KW 220V 50Hz D.U.T R=20W Vo 0.1mF DIAGRAM 3 : Test circuit see diagram2 adjust R for Ip=0.5A IBO IB -V 0.5 VBO +V Ip 90% △V VBO 10% -IF tr FIG.2-Relative variation of VBO versus junction temperature (typical values) FIG.1-Power dissipation versus ambient temperature (maximum values) P (mW) VBO(TJ) VBO(TJ=25℃) 160 1.08 140 120 100 1.06 80 60 1.04 40 Tamb( ℃) 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.02 TJ (℃) FIG.3-Peak pulse current versus pulse duration (maximum values) ITRM(A) 2 F=100Hz TJ initial=25℃ 1 0.1 tp(mS) 0.01 10 100 1000 10000 1.00 25 50 75 100 125