AP8N8R0J
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
80V
RDS(ON)
8mΩ
ID
G
60A
S
Description
AP4604 series
AP8N8R0
seriesare
arefrom
from Advanced
Advanced Power
Power innovated design and
silicon
and
silicon
process
process
technology
technology
to to
achieve
achievethe
thelowest
lowest possible
possible onon-resistance
resistance
andand
fast fast
switching
switching
performance.
performance.
It provides
It provides
the designer
the
designer
with anefficient
extremedevice
efficient
userange
in a wide
with an extreme
for device
use in aforwide
of power
range
of power applications.
applications.
The TO-220 package is widely preferred for all commercialindustrial
holeTO-251
applications.
The
low
thermal
The straightthrough
lead version
package is
widely
preferred
for all
resistance
and low package
to the worldwide
commercial-industrial
through cost
hole contribute
applications.
popular package.
G
D S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
60
A
ID@TC=100℃
Drain Current, VGS @ 10V
37.8
A
200
A
52
W
1.13
W
45
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
1
201702131
AP8N8R0J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
80
-
-
V
VGS=10V, ID=30A
-
-
8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
38
-
S
IDSS
Drain-Source Leakage Current
VDS=64V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
37
59.2
nC
Qgs
Gate-Source Charge
VDS=40V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
12
-
ns
tr
Rise Time
ID=30A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
73
-
ns
Ciss
Input Capacitance
VGS=0V
-
2000 3200
pF
Coss
Output Capacitance
VDS=40V
-
960
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
-
1
2
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=40V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP8N8R0J
100
200
o
T C = 25 C
10V
9.0V
80
ID , Drain Current (A)
ID , Drain Current (A)
160
8.0V
120
7.0V
80
V G =6.0V
40
60
40
20
0
0
0
2
4
6
8
10
0
12
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
16
I D =30A
I D =30A
V G =10V
T C =25 o C
2.0
12
.
10
Normalized RDS(ON)
14
RDS(ON) (mΩ)
10V
9.0V
8.0V
7.0V
V G =6.0V
T C =150 o C
1.6
1.2
0.8
8
0.4
6
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
30
I D =250uA
1.6
o
T j =150 C
T j =25 C
IS(A)
20
Normalized VGS(th)
o
1.2
0.8
10
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP8N8R0J
f=1.0MHz
4000
I D =30A
V DS =40V
10
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
2000
4
1000
C oss
2
C rss
0
0
0
10
20
30
40
1
50
21
41
61
81
101
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
ID (A)
Operation in this area
limited by RDS(ON)
10us
100us
10
.
1
1ms
0.1
10ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
0.1
1
10
0.00001
100
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
100
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
60
40
T j =150 o C
o
T j =25 C
20
20
o
T j = -55 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP8N8R0J
40
80
PD, Power Dissipation(W)
T j =25 o C
RDS(ON) (mΩ)
30
20
10
V GS =10V
60
40
20
0
0
0
20
40
60
0
80
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP8N8R0J
MARKING INFORMATION
Part Number
8N8R0
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6