merging Memory & Logic Solutions Inc. EM620FU16 Series Low Power, 128Kx16 SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 2’nd Draft Draft Date Remark December 18, 2002 Add Pb-free part number February 13 , 2004 Emerging Memory & Logic Solutions Inc. IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160 Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM FEATURES GENERAL DESCRIPTION • • • • • • The EM620FU16 families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. Process Technology : 0.18µm Full CMOS Organization :128K x 16 bit Power Supply Voltage : 2.7V ~ 3.3V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA 6.0x7.0 PRODUCT FAMILY Power Dissipation Product Family EM620FU16 Operating Temperature Vcc Range Speed Standby (ISB1 , Typ.) Operating (ICC1.Max.) Industrial (-40 ~ 85 oC) 2.7V~3.3V 551 )/70ns 1 µA 2 mA PKG Type 48-FPBGA 1. The parameter is measured with 30pF test load. PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM 1 2 3 4 5 6 A LB OE A0 A1 A2 CS2 B I/O 9 UB A3 A4 CS1 I/O1 Pre-charge Circuit I/O10 I/O11 D V SS E VC C A5 A6 I/O2 I/O3 I/O12 DNU A7 I/O4 VCC I/O13 DNU A16 I/O5 V SS VCC Row S elect C A0 A1 A2 A3 A4 A5 A6 A7 I/O15 I/O14 A14 A15 I/O6 I/O7 G I/O16 DNU A12 A13 WE I/O8 H DNU A9 A10 A11 DNU A8 I/O1 ~ I/O8 UB LB CS1 ,CS 2 Name Function Chip select inputs Vcc Power Supply OE Output Enable input Vss Ground WE Write Enable input UB Upper Byte (I/O 9~16) Address Inputs LB Lower Byte (I/O 1~8 ) A 0 ~A16 I/O1 ~I/O 16 Data Inputs/outputs DNU I/O Circuit Column Select A10 A11 A12 A13 A14 A15 A16 WE OE Function Data Cont Data Cont 48-FPBGA : Top view (ball down) Name 1024 x 2048 A8 A9 I/O9 ~ I/O16 F VSS Memory Array CS1 CS2 Do Not Use 2 Control Logic EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM ABSOLUTE MAXIMUM RATINGS * Parameter Symbol Voltage on Any Pin Relative to Vss Ratings Unit VIN , VOUT -0.2 to Vcc+0.3 (Max. 4.0V) V VCC -0.2 to 4.0V V Power Dissipation PD 1.0 W Operating Temperature TA -40 to 85 oC Voltage on Vcc supply relative to Vss * Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL DESCRIPTION CS1 CS 2 OE WE LB UB I/O 1-8 I/O9-16 Mode Power H X X X X X High-Z High-Z Deselected Stand by X L X X X X High-Z High-Z Deselected Stand by X X X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active L H X L L L Data In Data In Word Write Active Note: X means don’t care. (Must be low or high state) 3 EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM RECOMMENDED DC OPERATING CONDITIONS 1) Parameter 1. 2. 3. 4. Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.3 V Ground VSS 0 0 0 V Input high voltage VIH 2.0 - VCC + 0.22) V Input low voltage VIL -0.2 3) - 0.6 V TA= -40 to 85oC, otherwise specified Overshoot: V CC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE 1) (f =1MHz, TA=25oC) Item Symbol Test Condition Min Max Unit Input capacitance C IN VIN=0V - 8 pF Input/Ouput capacitance CIO VIO =0V - 10 pF 1. Capacitance is sampled, not 100% tested DC AND OPERATING CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI V I N=V SS to V CC -1 - 1 µA Output leakage current ILO CS 1=V I H or CS 2 = VIL or O E=VIH or W E=VIL or LB= UB=V IH V IO =V SS to V CC -1 - 1 µA Operating power supply ICC IIO =0mA, CS 1 =VIL , CS 2 =WE=VI H, VIN=V IH or V IL - - 2 mA - - 2 55ns - - 23 70ns - - 18 Cycle time=1µs, 100% duty, I IO=0mA, ICC1 Average operating current ICC2 CS 1 <0.2V, LB <0.2V or/and UB<0.2V, CS 2 >V CC-0.2V, V IN <0.2V or VI N>V CC -0.2V Cycle time = Min, I IO =0mA, 100% duty, CS 1 = VIL , CS 2 = VIH, LB=V IL or/and UB = VIL , V IN =VIL or V IH mA mA Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IO H = -1.0mA 2.2 - - V Standby Current (TTL) IS B CS 1 = VIH , CS2 =VIL, Other inputs=V IH or V IL - - 0.3 mA I SB1 CS 1 >V CC-0.2V, CS 2> V C C-0.2V (CS 1 controlled) or 0V <CS 2< 0.2V (CS2 controlled), Other inputs = 0~V C C - 1 5 µA Standby Current (CMOS) (Typ. condition : VCC=3.0V @ 25 o C) (Max. condition : VCC =3.3V @ 85o C) 4 LL LF EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM VTM 3) AC OPERATING CONDITIONS Test Conditions (Test Load and Test Input/Output Reference) R12) Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 1.5V Output Load (See right) : CL = 100pF+ 1 TTL R22) CL1) CL 1) = 30pF + 1 TTL 1. Including scope and Jig capacitance 2. R1 =3070Ω, R 2 =3150Ω 3. VTM=2.8V READ CYCLE (V cc =2.7 to 3.3V, Gnd = 0V, T A = -40oC to +85oC) Parameter 55ns Symbol 70ns Min Max Min Max Unit Read cycle time tRC 55 - 70 - ns Address access time tAA - 55 - 70 ns Chip select to output tco1, tco2 - 55 - 70 ns Output enable to valid output tO E - 30 - 35 ns UB, LB acess time tBA 70 ns Chip select to low-Z output 55 tLZ1, tLZ2 10 - 10 - ns UB, LB enable to low-Z output tBLZ 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - ns tHZ1, tHZ2 0 20 0 25 ns UB, LB disable to high-Z output tBHZ 0 20 0 25 ns Output disable to high-Z output tOHZ 0 20 0 25 ns Output hold from address change tOH 15 - 15 - ns Chip disable to high-Z output WRITE CYCLE (Vcc =2.7 to 3.3V, Gnd = 0V, TA = -40oC to +85oC) Parameter 55ns Symbol 70ns Unit Min Max Min Max tWC 55 - 70 - ns tCW1, tCW2 45 - 60 - ns Address setup time tAs 0 - 0 - ns Address valid to end of write tAW 45 - 60 - ns UB, LB valid to end of write tBW 45 - 60 - ns Write pulse width tWP 45 - 55 - ns Write recovery time tWR 0 - 0 - ns Write to ouput high-Z tWHZ 0 20 0 25 ns Data to write time overlap tDW 25 Data hold from write time tDH 0 - 0 - ns End write to output low-Z tOW 5 - 5 - ns Write cycle time Chip select to end of write 5 30 ns merging Memory & Logic Solutions Inc. EM620FU16 Series Low Power, 128Kx16 SRAM TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=VIL, CS2= WE=V IH, UB or/and LB= VI L) tRC Address tAA tOH Data Out Previous Data Valid Data Valid TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH) tRC Address tAA tOH tCO CS1 CS2 tHZ tBA UB,LB tBHZ tO E OE tOHZ tOLZ Data Out High-Z Data Valid tBLZ tLZ NOTES (READ CYCLE) 1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels. 2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device interconnection. 6 EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED) tWC Address tCW (2) tWR (4) CS1 CS2 tAW tBW UB ,LB tWP (1) WE tAS(3) Data in tDH tDW High-Z High-Z Data Valid tWHZ Data out tOW Data Undefined TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED) tWC Address tAS(3) tCW (2) tWR(4) CS1 CS2 tAW tBW UB,LB tWP (1) WE tDW Data in Data out Data Valid High-Z High-Z 7 tDH EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED) tWC Address tCW(2) tW R(4) CS1 CS2 tA W tB W UB ,LB tW P(1) tA S(3) WE tDW Data in Data out tDH Data Valid High-Z High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP ) of low CS1 and low WE. A write begins when CS 1 goes low and WE goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS1 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. t CW is measured from the CS1 going low to end of write. 3. t A S is measured from the address valid to the beginning of write. 4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE going high. 8 EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM DATA RETENTION CHARACTERISTICS Parameter Symbol VCC for Data Retention VDR Data Retention Current IDR Chip Deselect to Data Retention Time tSDR Operation Recovery Time tRDR Test Condition ISB1 Test Condition (Chip Disabled) 1) VCC =1.5V, ISB1 Test Condition (Chip Disabled) 1) See data retention wave form Min Typ Max Unit 1.5 - 3.3 V - 0.5 - µA 0 - - t RC - - NOTES 1. See the IS B 1 measurement condition of datasheet page 4. DATA RETENTION WAVE FORM tSDR Data Retention Mode tRDR Vcc 2.7V 2.2V VDR CS 1 > Vcc-0.2V CS1 GND Data Retention Mode Vcc 2.7V CS 2 tRDR tSDR VDR 0.4V CS 2 < 0.2V GND 9 ns EM620FU16 Series merging Memory & Logic Solutions Inc. Low Power, 128Kx16 SRAM Unit: millimeters PACKAGE DIMENSION 48 Ball Fine Pitch BGA (0.75mm ball pitch) Bottom View Top View A1 index Mark B B1 6 5 4 3 0.5 0.5 B 2 1 A B #A1 C C1 C C D C1/2 E F G H B/2 E2 0.26 Side View Detail A D 0.25 Typ. E E1 A Min Typ Max A - 0.75 - B 5.93 6.00 6.03 B1 - 3.75 - C 6.93 7.00 7.03 C1 - 5.25 - D 0.30 0.35 0.40 E 1.00 1.04 1.10 E1 - 0.79 - E2 - 0.25 - Y - - 0.08 0.79 Typ. C Y NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75x0.75) (typ.) 3. All tolerence are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max) 10 merging Memory & Logic Solutions Inc. EM620FU16 Series Low Power, 128Kx16 SRAM MEMORY FUNCTION GUIDE EM X XX X X X XX X X - XX XX 1. EMLSI Memory 11. Power 2. Device Type 10. Speed 3. Density 4. Option 9. Packages 5. Technology 8. Version 6. Operating Voltage 7. Orgainzation 1. Memory Component 8. Version Blank ----------------- Mother Die A ----------------------- First revision B ----------------------- Second revision C ----------------------- Third revision D ----------------------- Fourth revision 2. Device Type 6 ------------------------ Low Power SRAM 7 ------------------------ STRAM 3. Density 1 ------------------------- 1M 2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 16 ----------------------- 16M 32 ----------------------- 32M 64 ----------------------- 64M 9. Package Blank ---------------------- Package W --------------------- Wafer 10. Speed 45 ---------------------- 45ns 55 ---------------------- 55ns 70 ---------------------- 70ns 85 ---------------------- 85ns 10 --------------------- 100ns 12 --------------------- 120ns 4. Option 0 ----------------------- Dual CS 1 ----------------------- Single CS 5. Technology Blank ------------------ CMOS F ------------------------ Full CMOS 11. Power LL ---------------------LF ---------------------L ---------------------S ---------------------- 6. Operating Voltage Blank ------------------- 5V V ------------------------- 3.3V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V 7. Orginzation 8 ---------------------- x8 bit 16 ---------------------- x16 bit 32 ---------------------- x32 bit 11 Low Low Power Low Low Power(Pb-Free) Low Power Standard Power