NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX601B FOR GRAPHS B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. 180 V IC=100µ A, IE=0 V(BR)CEO 160 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.01 10 µA µA VCB=160V VCB=160V,T amb =100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=8V, IC=0 Colllector-Emitter Cut-Off Current ICES 10 µA VCES=160V Collector-Emitter Saturation Voltage VCE(sat) 0.75 0.85 1.1 1.2 V V IC=0.5A, IB=5mA* IC=1A, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 V IC=1A, VCE=5V* 100K Static Forward Current hFE Transfer Ratio 5K 10K 5K 10K 20K 10K Transition Frequency 150 250 fT MAX. IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-42 IC=100mA, VCE=10V f=20MHz