DIGITRON SEMICONDUCTORS MAC223(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak repetitive off-state voltage (TJ = -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open) MAC223-3, MAC223A-3 MAC223-4, MAC223A-4 MAC223-5, MAC223A-5 MAC223-6, MAC223A-6 MAC223-7, MAC223A-7 MAC223-8, MAC223A-8 MAC223-9, MAC223A-9 MAC223-10, MAC223A-10 Value Unit (1) 100 200 300 400 500 600 700 800 VDRM RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C) IT(RMS) Volts 25 Amps Peak non-repetitive surge current (1 cycle, 60Hz, TC = 80°C, preceded and followed by rated current) ITSM Circuit fusing considerations (t = 8.3ms) I2t 260 A2s Peak gate current (t ≤ 2µs) IGM 2.0 Amps Peak gate voltage (t ≤ 2µs) VGM ±10 Volts Peak gate power (t ≤ 2µs) PGM 20 Watts PG(AV) 0.5 Watts TJ -40 to +125 °C Tstg -40 to +150 °C 8 In. lb. Average gate power (TC = 80°C, t ≤ 8.3ms) Operating junction temperature range Storage temperature range Amps 250 Mounting torque Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 1.2 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit Peak blocking current (VD = Rated VDRM, TJ = 25°C) (VD = Rated VDRM, TJ = 125°C) IDRM - - 10 2 µA mA Peak on-state voltage (ITM = 35A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.) VTM - 1.4 1.85 Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) MT2(-),G(+) “A” suffix only IGT - 20 30 50 75 Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) MT2(-),G(+) “A” suffix only (VD = Rated VDRM, RL = 10kΩ, TJ = 125°C) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) MT2(-),G(+) “A” suffix only VGT - 1.1 1.3 2.0 2.5 0.2 0.2 0.4 0.4 - (2) 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130131 Volts mA Volts DIGITRON SEMICONDUCTORS MAC223(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Characteristic Symbol Holding current (VD = 12V, ITM = 200mA, gate open) IH Gate controlled turn-on time (VD = Rated VDRM, ITM = 35A, IG = 200mA) tgt Critical rate of rise of off-state voltage (VD = Rated VDRM, exponential waveform, gate open, TC = 125°C) Min - dv/dt Critical rate of rise of commutation voltage (VD = Rated VDRM, ITM = 35A peak, commutating di/dt = 12.6A/ms, gate unenergized, TC = 80°C) dv/dt(c) Typ. 10 Max 50 - 1.5 - - 40 - - 5 - Unit mA µs V/µs V/µs Note 2: Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltages such that the voltage applied exceeds the rated blocking voltage. MECHANICAL CHARACTERISTIC Case TO-220AB Marking Alpha-numeric Pin out See below TO-220AB A B C D F G H J K L N Q R S T U V Z 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 Inches Min Max 0.575 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.050 0.045 0.080 Millimeters Min Max 14.600 15.750 9.650 10.290 4.060 4.820 0.640 0.890 3.610 3.730 2.410 2.670 2.790 3.930 0.360 0.560 12.700 14.270 1.140 1.390 4.830 5.330 2.540 3.040 2.040 2.790 1.140 1.390 5.970 6.480 1.270 1.140 2.030 [email protected] www.digitroncorp.com Rev. 20130131 DIGITRON SEMICONDUCTORS MAC223(A) SERIES 144 Market Street Kenilworth NJ 07033 USA SILICON BIDIRECTIONAL THYRISTORS phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130131