Vishay BAS70-04-V-GS08 Small signal schottky diodes, single & dual Datasheet

BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
e3
• These devices are protected by a PN
junction guard ring against excessive voltage, such as electrostatic discharges
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
BAS70-00-V
BAS70-04-V
3
3
Top View
1
2
2
BAS70-06-V
3
3
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
1
BAS70-05-V
Top View
1
1
2
2
18439
Parts Table
Part
Ordering code
Type Marking
Remarks
BAS70-00-V
BAS70-00-V-GS18 or BAS70-00-V-GS08
73
Tape and Reel
BAS70-04-V
BAS70-04-V-GS18 or BAS70-04-V-GS08
74
Tape and Reel
BAS70-05-V
BAS70-05-V-GS18 or BAS70-05-V-GS08
75
Tape and Reel
BAS70-06-V
BAS70-06-V-GS18 or BAS70-06-V-GS08
76
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Symbol
Value
Unit
VRRM = VRWM = VR
70
V
Forward continuous current
Surge forward current
Power dissipation
1)
IF
tp < 1 s
1)
mA
200
1)
IFSM
600
1)
mA
Ptot
2001)
mW
Device on fiberglass substrate, see layout on next page
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Symbol
Value
Unit
RthJA
5001)
K/W
Tj
125
°C
Tstg
- 65 to + 125
°C
Device on fiberglass substrate, see layout on next page
Document Number 85702
Rev. 1.7, 27-Sep-06
www.vishay.com
1
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
V(BR)
70
Reverse breakdown voltage
IR = 10 μA (pulsed)
Leakage current
VR = 50 V
IR
Forward voltage
Typ.
Max
Unit
20
100
nA
V
IF = 1.0 mA
VF
410
mV
Forward voltage
IF = 15 mA,
VF
1000
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
2
pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA,
RL = 100 Ω
trr
5
ns
1)
1)
1.5
Pulse test; tp ≤ 300 μs
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
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2
17451
Document Number 85702
Rev. 1.7, 27-Sep-06
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT23
17418
Document Number 85702
Rev. 1.7, 27-Sep-06
www.vishay.com
3
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85702
Rev. 1.7, 27-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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