LRC LMUN5236T1 Bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
LMUN5211T1
SERIES
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
3
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or
1
2
SC-70 / SOT-323
PIN 1
R1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb-Free package is available
MARKINGDIAGRAM
8X
M
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance –
Junction-to-Ambient
RθJA
618 (Note 1.)
403 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
280 (Note 1.)
332 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5211T1 Series–1/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
DEVICE MARKING RESISTOR VALUES AND ORDERING INFORMATION
Device
Package
Marking
R1(K)
R2(K)
Shipping
LMUN5211T1
SC-70/SOT-323
8A
10
10
3000/Tape&Reel
LMUN5211T1G
SC-70/SOT-323
8A(Pb-Free)
10
10
3000/Tape&Reel
LMUN5212T1
SC-70/SOT-323
8B
22
22
3000/Tape&Reel
LMUN5212T1G
SC-70/SOT-323
8B(Pb-Free)
22
22
3000/Tape&Reel
LMUN5213T1
SC-70/SOT-323
8C
47
47
3000/Tape&Reel
LMUN5213T1G
SC-70/SOT-323
8C(Pb-Free)
47
47
3000/Tape&Reel
LMUN5214T1
SC-70/SOT-323
8D
10
47
3000/Tape&Reel
LMUN5214T1G
SC-70/SOT-323
8D(Pb-Free)
10
47
3000/Tape&Reel
LMUN5215T1(Note 3)
SC-70/SOT-323
8E
10
Ğ
3000/Tape&Reel
LMUN5215T1G
SC-70/SOT-323
8E(Pb-Free)
10
Ğ
3000/Tape&Reel
LMUN5216T1(Note 3)
SC-70/SOT-323
8F
4.7
Ğ
3000/Tape&Reel
LMUN5216T1G
SC-70/SOT-323
8F(Pb-Free)
4.7
Ğ
3000/Tape&Reel
LMUN5230T1(Note 3)
SC-70/SOT-323
8G
1
1
3000/Tape&Reel
LMUN5230T1G
SC-70/SOT-323
8G(Pb-Free)
1
1
3000/Tape&Reel
LMUN5231T1(Note 3)
SC-70/SOT-323
8H
2.2
2.2
3000/Tape&Reel
LMUN5231T1G
SC-70/SOT-323
8H(Pb-Free)
2.2
2.2
3000/Tape&Reel
LMUN5232T1(Note 3)
SC-70/SOT-323
8J
4.7
4.7
3000/Tape&Reel
LMUN5232T1G
SC-70/SOT-323
8J(Pb-Free)
4.7
4.7
3000/Tape&Reel
LMUN5233T1(Note 3)
SC-70/SOT-323
8K
4.7
47
3000/Tape&Reel
LMUN5233T1G
SC-70/SOT-323
8K(Pb-Free)
4.7
47
3000/Tape&Reel
LMUN5234T1(Note 3)
SC-70/SOT-323
8L
22
47
3000/Tape&Reel
LMUN5234T1G
SC-70/SOT-323
8L(Pb-Free)
22
47
3000/Tape&Reel
LMUN5235T1(Note 3)
SC-70/SOT-323
8M
2.2
47
3000/Tape&Reel
LMUN5235T1G
SC-70/SOT-323
8M(Pb-Free)
2.2
47
3000/Tape&Reel
LMUN5236T1(Note 3)
SC-70/SOT-323
8N
100
100
3000/Tape&Reel
LMUN5236T1G
SC-70/SOT-323
8N(Pb-Free)
100
100
3000/Tape&Reel
LMUN5237T1(Note 3)
SC-70/SOT-323
8P
47
22
3000/Tape&Reel
LMUN5237T1G
SC-70/SOT-323
8P(Pb-Free)
47
22
3000/Tape&Reel
3. New devices. Updated curves to follow in subsequent data sheets.
LMUN5211T1 Series-2/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCE(sat)
–
–
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
LMUN5211T1
LMUN5212T1
LMUN5213T1
LMUN5214T1
LMUN5215T1
LMUN5216T1
LMUN5230T1
LMUN5231T1
LMUN5232T1
LMUN5233T1
LMUN5234T1
LMUN5235T1
LMUN5236T1
LMUN5237T1
ON CHARACTERISTICS (Note 4.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LMUN5211T1
LMUN5212T1
LMUN5213T1
LMUN5214T1
LMUN5215T1
LMUN5216T1
LMUN5230T1
LMUN5231T1
LMUN5232T1
LMUN5233T1
LMUN5234T1
LMUN5235T1
LMUN5236T1
LMUN5237T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) LMUN5230T1/LMUN5231T1
(IC = 10 mA, IB = 1 mA) LMUN5215T1/LMUN5216T1/
LMUN5232T1/LMUN5233T1/LMUN5234T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
VOL
LMUN5211T1
LMUN5212T1
LMUN5214T1
LMUN5215T1
LMUN5216T1
LMUN5230T1
LMUN5231T1
LMUN5232T1
LMUN5233T1
LMUN5234T1
LMUN5235T1
LMUN5213T1
LMUN5236T1
LMUN5237T1
Vdc
Vdc
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
LMUN5211T1 Series-3/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 5.) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
LMUN5230T1
LMUN5215T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
LMUN5216T1
LMUN5233T1
Input Resistor
Resistor Rati
LMUN5211T1
LMUN5212T1
LMUN5213T1
LMUN5214T1
LMUN5215T1
LMUN5216T1
LMUN5230T1
LMUN5231T1
LMUN5232T1
LMUN5233T1
LMUN5234T1
LMUN5235T1
LMUN5236T1
LMUN5237T1
LMUN5211T1/LMUN5212T1/LMUN5213T1/
LMUN5236T1
LMUN5214T1
LMUN5215T1/LMUN5216T1
LMUN5230T1/LMUN5231T1/LMUN5232T1
LMUN5233T1
LMUN5234T1
LMUN5235T1
LMUN5237T1
R1/R2
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
–50
RθJA = 403°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
LMUN5211T1 Series–4/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1
TAĂ=Ă-25°C
25°C
0.1
75°C
0
20
40
IC, COLLECTOR CURRENT (mA)
TAĂ=Ă75°C
25°C
-25°C
100
0.01
0.001
VCE = 10 V
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
TAĂ=Ă-25°C
10
1
0.1
0.01
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
TAĂ=Ă-25°C
25°C
75°C
1
0.1
0
10
40
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
LMUN5211T1 Series–5/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5212T1
IC/IB = 10
25°C
TAĂ=Ă-25°C
0.1
75°C
0.01
0.001
0
20
40
-25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TAĂ=Ă-25°C
10
1
0.1
0.01
VO = 5 V
0
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
Figure 9. Output Capacitance
2
0
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TAĂ=Ă75°C
25°C
10
50
VCE = 10 V
TAĂ=Ă-25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
LMUN5211T1 Series–6/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
10
1000
IC/IB = 10
1
25°C
TAĂ=Ă-25°C
75°C
0.1
0.01
0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5213T1
TAĂ=Ă75°C
25°C
-25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
1
100
25°C
IC, COLLECTOR CURRENT (mA)
75°C
0.6
0.4
0.2
TAĂ=Ă-25°C
10
1
0.1
0.01
VO = 5 V
0
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
Figure 14. Output Capacitance
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
TAĂ=Ă-25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
LMUN5211T1 Series–7/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5214T1
TAĂ=Ă-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
200
-25°C
150
100
50
0
80
TAĂ=Ă75°C
VCE = 10
250
2
1
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TAĂ=Ă75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
Figure 19. Output Capacitance
45
50
25°C
-25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
TAĂ=Ă-25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
LMUN5211T1 Series–8/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
LMUN5211T1 Series–9/10
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
LMUN5211T1 Series-10/10
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