ATMEL AT49BV3218 32-megabit (2m x 16/4m x 8) 3-volt only flash memory Datasheet

Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
• Access Time – 85 ns
• Sector Erase Architecture
•
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•
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•
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– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time – 15 µs
Fast Sector Erase Time – 200 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors
Memory Plane B: Forty-eight 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 25 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV3218(T) is a 2.65- to 3.3-volt (BV)/3.0V to 3.6V (LV) 32-megabit Flash
memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits
each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The
memory is divided into 71 sectors for erase operations. The device is offered in 48lead TSOP and 48-ball CBGA packages. The device has CE and OE control signals to
avoid any bus contention. This device can be read or reprogrammed using a single
2.65V power supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name
Function
A0 - A20
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP
Optional Power Supply
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV3218
AT49BV3218T
AT49LV3218
AT49LV3218T
Not Recommended for
New Designs. New
Designs Should Use
AT49BV/LV320(T)/321(T)
Rev. 2452F–FLASH–10/02
1
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
VPP*
NC*
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
Note:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
CBGA Top View
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
1
2
A3
3
4
5
6
A7 RDY/BUSY WE
A9
A13
A4
A17
NC*
RESET
A8
A12
A2
A6
A18
VPP*
A10
A14
A1
A5
A20
A19
A11
A15
A0
I/O0
I/O2
I/O5
I/O7
A16
CE
I/O8
I/O10
I/O12
I/O14
BYTE
OE
I/O9
I/O11
VCC
I/O13 I/O15/A-1
VSS
I/O1
I/O3
I/O4
I/O6
A
B
C
D
E
F
G
H
VSS
*Either pin 13 or pin 14 (TSOP package) or ball B3 or ball C4 (CBGA package) can be connected to VPP or both pins can be
unconnected.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see Sector Lockdown section).
The device is segmented into two memory planes. Reads from memory plane B may be
performed even while program or erase functions are being executed in memory plane
A and vice versa. This operation allows improved system performance by not requiring
the system to wait for a program or erase operation to complete before a read is performed. To further increase the flexibility of the device, it contains an Erase Suspend
feature. This feature will put the erase on hold for any amount of time and let the user
read data from or program data to any of the remaining sectors within the same memory
plane. There is no reason to suspend the erase operation if the data to be read is in the
other memory plane. The end of a program or an erase cycle is detected by the
Ready/Busy pin, Data Polling or by the toggle bit.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the
requirement of entering the three-byte program sequence is offered to further improve
programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode (Single Pulse Byte/Word
Program) is exited by powering down the device, or by pulsing the RESET pin low for a
minimum of 500 ns and then bringing it back to VCC. Erase and Erase Suspend/Resume
commands will not work while in this mode; if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the
software of the final product but only exist in external programming code.
The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the
device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is
used as an input for the LSB (A-1) address function.
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AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Block Diagram
I/O0 - I/O15/A-1
INPUT
BUFFER
INPUT
BUFFER
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
REGISTER
A0 - A20
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
CE
WE
OE
RESET
BYTE
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
Y-DECODER
Y-GATING
RDY/BUSY
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
VPP
VCC
GND
X-DECODER
PLANE B
SECTORS
PLANE A SECTORS
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2452F–FLASH–10/02
Device
Operation
READ: The AT49BV/LV3218(T) is accessed like an EPROM. When CE and OE are low and
WE is high, the data stored at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE
is high. This dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or
standby mode, depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the Command Definitions table (I/O8 - I/O15 are don’t care inputs for
the command codes). The command sequences are written by applying a low pulse on the
WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the
falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of
CE or WE. Standard microprocessor write timings are used. The address locations used in the
command sequences are not affected by entering the command sequences.
RESET: A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high-impedance
state. When a high level is reasserted on the RESET pin, the device returns to the read or
standby mode, depending upon the state of the control inputs.
ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command.
CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is tEC.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector
that has been locked out; it will erase only the unprotected sectors. After the chip erase, the
device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 71 sectors (SA0 - SA70) that can be individually erased. The Sector Erase command is a six-bus
cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while
the 30H data input command is latched on the rising edge of WE. The sector erase starts after
the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will
automatically time to completion. The maximum time to erase a section is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector
Erase command). An attempt to erase a sector that has been protected will result in the operation terminating in 2 µs.
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the
internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses.
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle
time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a
program cycle.
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AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled.
These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is
updated. This feature does not have to be activated; any sector’s usage as a write protected
region is optional to the user.
At power-up or reset all sectors are unlocked. To activate the lockdown for a specific sector,
the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked
down, the contents of the sector is read-only and cannot be erased or programmed.
SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification
mode (see Software Product Identification Entry and Exit sections) a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on
I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown
feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation.
SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is
through reset or power-up cycles. After power-up or reset, the content of a sector that is
locked down can be erased and reprogrammed.
ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to
interrupt a sector erase operation and then program or read data from a different sector within
the same plane. Since this device has a dual-plane architecture, there is no need to use the
Erase Suspend feature while erasing a sector when you want to read data from a sector in the
other plane. After the Erase Suspend command is given, the device requires a maximum time
of 15 µs to suspend the erase operation. After the erase operation has been suspended, the
plane that contains the suspended sector enters the erase-suspend-read mode. The system
can then read data or program data to any other sector within the device. An address is not
required during the Erase Suspend command. During a sector erase suspend, another sector
cannot be erased. To resume the sector erase operation, the system must write the Erase
Resume command. The Erase Resume command is a one-bus cycle command, which does
require the plane address (determined by A20 - A19). The device also supports an erase suspend during a complete chip erase. While the chip erase is suspended, the user can read from
any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the same.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see “Operating Modes” on page 13 (for hardware operation) or “Software Product
Identification Entry/Exit” on page 20. The manufacturer and device codes are the same for
both modes.
128-BIT PROTECTION REGISTER: The device contains a 128-bit register that can be used
for security purposes in system design. The protection register is divided into two 64-bit
blocks. The two blocks are designated as block A and block B. The data in block A is nonchangeable and is programmed at the factory with a unique number. The data in block B is
programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program
Protection Register command must be used as shown in the Command Definition table on
page 7. To lock out block B, the four-bus cycle Lock Protection Register command must be
used as shown in the Command Definition table. Data bit D1 must be zero during the fourth
5
2452F–FLASH–10/02
bus cycle. All other data bits during the fourth bus cycle are don’t cares. Please see the “Protection Register Addressing Table” on page 8 for the address locations in the protection
register. To read the protection register, the Product ID Entry command is given followed by a
normal read operation from an address within the protection register. After reading the protection register, the Product ID Exit command must be given prior to performing any other
operation.
DATA POLLING: The AT49BV/LV3218(T) features Data Polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte/word loaded will result
in the complement of the loaded data on I/O7. Once the program cycle has been completed,
true data is valid on all outputs and the next cycle may begin. During a chip or sector erase
operation, an attempt to read the device will give a “0” on I/O7. Once the program or erase
cycle has completed, true data will be read from the device. Data Polling may begin at any
time during the program cycle. Please see “Status Bit Table” on page 21 for more details.
TOGGLE BIT: In addition to Data Polling, the AT49BV/LV3218(T) provides another method
for determining the end of a program or erase cycle. During a program or erase operation,
successive attempts to read data from the same memory plane will result in I/O6 toggling
between one and zero. Once the program cycle has completed, I/O6 will stop toggling and
valid data will be read. Examining the toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2, which can be used in conjunction with the toggle
bit that is available on I/O6. While a sector is erase suspended, a read or a program operation
from the suspended sector will result in the I/O2 bit toggling. Please see “Status Bit Table” on
page 21 for more details.
RDY/BUSY: An open-drain Ready/Busy output pin provides another method of detecting the
end of a program or erase operation. RDY/BUSY is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. The open-drain
connection allows for OR-tying of several devices to the same RDY/BUSY line.
HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against
inadvertent programs to the AT49BV/LV3218(T) in the following ways: (a) VCC sense: if VCC is
below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has
reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits
program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will
not initiate a program cycle.
INPUT LEVELS: While operating with a 2.65V to 3.3V power supply, the address inputs and
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.
6
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Command Definition in Hex(1)
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
555
Sector Erase
6
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AA
AAA (2)
55
555
80
555
AA
AAA
555
AA
AAA
55
555
80
555
AA
AAA
55
555
10
55
SA(3)(4)
30
Byte/Word Program
4
555
AA
AAA
55
555
A0
Addr
DIN
Enter Single Pulse
Program Mode
6
555
AA
AAA
55
555
80
555
AA
AAA
55
555
A0
Single Pulse
Byte/Word Program
1
Addr
DIN
Sector Lockdown
6
555
AA
AAA
55
555
80
555
AA
AAA
55
SA(3)(4)
60
Erase Suspend
1
XXX
B0
Erase Resume
1
PA(5)
30
Product ID Entry
3
555
AA
AAA
55
555
90
Product ID Exit(6)
3
555
AA
AAA
55
555
F0
Product ID Exit(6)
1
XXX
F0
Program Protection
Register
4
555
AA
AAA
55
555
C0
Addr
DIN
Lock Protection
Register - Block B
4
555
AA
AAA
55
555
C0
080
X0
Status of Block B
Protection
4
555
AA
AAA
55
555
90
80
DOUT(7)
Notes:
1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8 are Don’t Care.
The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A20 through A11 are Don’t Care
in the word mode. Address A20 through A11 and A-1 are Don’t Care in the byte mode.
2. Since A11 is a Don’t Care, AAA can be replaced with 2AA.
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 9 -12
for details).
4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power
cycled.
5. PA is the plane address (A20 - A19).
6. Either one of the Product ID Exit commands can be used.
7. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on OE and VPP
with Respect to Ground ...................................-0.6V to +13.0V
7
2452F–FLASH–10/02
Protection Register Addressing Table
Word
Use
Block
A7
A6
A5
A4
A3
A2
A1
A0
0
Factory
A
1
0
0
0
0
0
0
1
1
Factory
A
1
0
0
0
0
0
1
0
2
Factory
A
1
0
0
0
0
0
1
1
3
Factory
A
1
0
0
0
0
1
0
0
4
User
B
1
0
0
0
0
1
0
1
5
User
B
1
0
0
0
0
1
1
0
6
User
B
1
0
0
0
0
1
1
1
User
B
1
0
0
0
1
0
0
0
7
Note:
8
1. All address lines not specified in the above table must be 0 when accessing the protection register, i.e., A20 - A8 = 0.
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
AT49BV/LV3218 – Sector Address Table
x8
x16
Plane
Sector
Size (Bytes/Words)
Address Range (A20 - A-1)
Address Range (A20 - A0)
A
SA0
8K/4K
000000 - 001FFF
00000 - 00FFF
A
SA1
8K/4K
002000 - 003FFF
01000 - 01FFF
A
SA2
8K/4K
004000 - 005FFF
02000 - 02FFF
A
SA3
8K/4K
006000 - 007FFF
03000 - 03FFF
A
SA4
8K/4K
008000 - 009FFF
04000 - 04FFF
A
SA5
8K/4K
00A000 - 00BFFF
05000 - 05FFF
A
SA6
8K/4K
00C000 - 00DFFF
06000 - 06FFF
A
SA7
8K/4K
00E000 - 00FFFF
07000 - 07FFF
A
SA8
64K/32K
010000 - 01FFFF
08000 - 0FFFF
A
SA9
64K/32K
020000 - 02FFFF
10000 - 17FFF
A
SA10
64K/32K
030000 - 03FFFF
18000 - 1FFFF
A
SA11
64K/32K
040000 - 04FFFF
20000 - 27FFF
A
SA12
64K/32K
050000 - 05FFFF
28000 - 2FFFF
A
SA13
64K/32K
060000 - 06FFFF
30000 - 37FFF
A
SA14
64K/32K
070000 - 07FFFF
38000 - 3FFFF
A
SA15
64K/32K
080000 - 08FFFF
40000 - 47FFF
A
SA16
64K/32K
090000 - 09FFFF
48000 - 4FFFF
A
SA17
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
A
SA18
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
A
SA19
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
A
SA20
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
A
SA21
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
A
SA22
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
B
SA23
64K/32K
100000 - 10FFFF
80000 - 87FFF
B
SA24
64K/32K
110000 - 11FFFF
88000 - 8FFFF
B
SA25
64K/32K
120000 - 12FFFF
90000 - 97FFF
B
SA26
64K/32K
130000 - 13FFFF
98000 - 9FFFF
B
SA27
64K/32K
140000 - 14FFFF
A0000 - A7FFF
B
SA28
64K/32K
150000 - 15FFFF
A8000 - AFFFF
B
SA29
64K/32K
160000 - 16FFFF
B0000 - B7FFF
B
SA30
64K/32K
170000 - 17FFFF
B8000 - BFFFF
B
SA31
64K/32K
180000 - 18FFFF
C0000 - C7FFF
B
SA32
64K/32K
190000 - 19FFFF
C8000 - CFFFF
B
SA33
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
B
SA34
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
B
SA35
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
B
SA36
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
9
2452F–FLASH–10/02
AT49BV/LV3218 – Sector Address Table (Continued)
10
x8
x16
Plane
Sector
Size (Bytes/Words)
Address Range (A20 - A-1)
Address Range (A20 - A0)
B
SA37
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
B
SA38
64K/32K
1F0000 - 1FFFFF
F8000 - FFFFF
B
SA39
64K/32K
200000 - 20FFFF
100000 - 107FFF
B
SA40
64K/32K
210000 - 21FFFF
108000 - 10FFFF
B
SA41
64K/32K
220000 - 22FFFF
110000 - 117FFF
B
SA42
64K/32K
230000 - 23FFFF
118000 - 11FFFF
B
SA43
64K/32K
240000 - 24FFFF
120000 - 127FFF
B
SA44
64K/32K
250000 - 25FFFF
128000 - 12FFFF
B
SA45
64K/32K
260000 - 26FFFF
130000 - 137FFF
B
SA46
64K/32K
270000 - 27FFFF
138000 - 13FFFF
B
SA47
64K/32K
280000 - 28FFFF
140000 - 147FFF
B
SA48
64K/32K
290000 - 29FFFF
148000 - 14FFFF
B
SA49
64K/32K
2A0000 - 2AFFFF
150000 - 157FFF
B
SA50
64K/32K
2B0000 - 2BFFFF
158000 - 15FFFF
B
SA51
64K/32K
2C0000 - 2CFFFF
160000 - 167FFF
B
SA52
64K/32K
2D0000 - 2DFFFF
168000 - 16FFFF
B
SA53
64K/32K
2E0000 - 2EFFFF
170000 - 177FFF
B
SA54
64K/32K
2F0000 - 2FFFFF
178000 - 17FFFF
B
SA55
64K/32K
300000 - 30FFFF
180000 - 187FFF
B
SA56
64K/32K
310000 - 31FFFF
188000 - 18FFFF
B
SA57
64K/32K
320000 - 32FFFF
190000 - 197FFF
B
SA58
64K/32K
330000 - 33FFFF
198000 - 19FFFF
B
SA59
64K/32K
340000 - 34FFFF
1A0000 - 1A7FFF
B
SA60
64K/32K
350000 - 35FFFF
1A8000 - 1AFFFF
B
SA61
64K/32K
360000 - 36FFFF
1B0000 - 1B7FFF
B
SA62
64K/32K
370000 - 37FFFF
1B8000 - 1BFFFF
B
SA63
64K/32K
380000 - 38FFFF
1C0000 - 1C7FFF
B
SA64
64K/32K
390000 - 39FFFF
1C8000 - 1CFFFF
B
SA65
64K/32K
3A0000 - 3AFFFF
1D0000 - 1D7FFF
B
SA66
64K/32K
3B0000 - 3BFFFF
1D8000 - 1DFFFF
B
SA67
64K/32K
3C0000 - 3CFFFF
1E0000 - 1E7FFF
B
SA68
64K/32K
3D0000 - 3DFFFF
1E8000 - 1EFFFF
B
SA69
64K/32K
3E0000 - 3EFFFF
1F0000 -1F7FFF
B
SA70
64K/32K
3F0000 - 3FFFFF
1F8000 - 1FFFF
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
AT49BV/LV3218T – Sector Address Table
x8
x16
Plane
Sector
Size (Bytes/Words)
Address Range (A20 - A-1)
Address Range (A20 - A0)
B
SA0
64K/32K
000000 - 00FFFF
00000 - 07FFF
B
SA1
64K/32K
010000 - 01FFFF
08000 - 0FFFF
B
SA2
64K/32K
020000 - 02FFFF
10000 - 17FFF
B
SA3
64K/32K
030000 - 03FFFF
18000 - 1FFFF
B
SA4
64K/32K
040000 - 04FFFF
20000 - 27FFF
B
SA5
64K/32K
050000 - 05FFFF
28000 - 2FFFF
B
SA6
64K/32K
060000 - 06FFFF
30000 - 37FFF
B
SA7
64K/32K
070000 - 07FFFF
38000 - 3FFFF
B
SA8
64K/32K
080000 - 08FFFF
40000 - 47FFF
B
SA9
64K/32K
090000 - 09FFFF
48000 - 4FFFF
B
SA10
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
B
SA11
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
B
SA12
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
B
SA13
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
B
SA14
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
B
SA15
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
B
SA16
64K/32K
100000 - 10FFFF
80000 - 87FFF
B
SA17
64K/32K
110000 - 11FFFF
88000 - 8FFFF
B
SA18
64K/32K
120000 - 12FFFF
90000 - 97FFF
B
SA19
64K/32K
130000 - 13FFFF
98000 - 9FFFF
B
SA20
64K/32K
140000 - 14FFFF
A0000 - A7FFF
B
SA21
64K/32K
150000 - 15FFFF
A8000 - AFFFF
B
SA22
64K/32K
160000 - 16FFFF
B0000 - B7FFF
B
SA23
64K/32K
170000 - 17FFFF
B8000 - BFFFF
B
SA24
64K/32K
180000 - 18FFFF
C0000 - C7FFF
B
SA25
64K/32K
190000 - 19FFFF
C8000 - CFFFF
B
SA26
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
B
SA27
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
B
SA28
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
B
SA29
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
B
SA30
64K/32K
IE0000 - IEFFFF
F0000 - F7FFF
B
SA31
64K/32K
1F0000 - 1FFFFF
F8000 - FFFFF
B
SA32
64K/32K
200000 - 20FFFF
100000 - 107FFF
B
SA33
64K/32K
210000 - 21FFFF
108000 - 10FFFF
B
SA34
64K/32K
220000 - 22FFFF
110000 - 117FFF
B
SA35
64K/32K
230000 - 23FFFF
118000 - 11FFFF
B
SA36
64K/32K
240000 - 24FFFF
120000 - 127FFF
11
2452F–FLASH–10/02
AT49BV/LV3218T – Sector Address Table (Continued)
12
x8
x16
Plane
Sector
Size (Bytes/Words)
Address Range (A20 - A-1)
Address Range (A20 - A0)
B
SA37
64K/32K
250000 - 25FFFF
128000 - 12FFFF
B
SA38
64K/32K
260000 - 26FFFF
130000 - 137FFF
B
SA39
64K/32K
270000 - 27FFFF
138000 - 13FFFF
B
SA40
64K/32K
280000 - 28FFFF
140000 - 147FFF
B
SA41
64K/32K
290000 - 29FFFF
148000 - 14FFFF
B
SA42
64K/32K
2A0000 - 2AFFFF
150000 - 157FFF
B
SA43
64K/32K
2B0000 - 2BFFFF
158000 - 15FFFF
B
SA44
64K/32K
2C0000 - 2CFFFF
160000 - 167FFF
B
SA45
64K/32K
2D0000 - 2DFFFF
168000 - 16FFFF
B
SA46
64K/32K
2E0000 - 2EFFFF
170000 - 177FFF
B
SA47
64K/32K
2F0000 - 2FFFFF
178000 - 17FFFF
A
SA48
64K/32K
300000 - 30FFFF
180000 - 187FFF
A
SA49
64K/32K
310000 - 31FFFF
188000 - 18FFFF
A
SA50
64K/32K
320000 - 32FFFF
190000 - 197FFF
A
SA51
64K/32K
330000 - 33FFFF
198000 - 19FFFF
A
SA52
64K/32K
340000 - 34FFFF
1A0000 - 1A7FFF
A
SA53
64K/32K
350000 - 35FFFF
1A8000 - 1AFFFF
A
SA54
64K/32K
360000 - 36FFFF
1B0000 - 1B7FFF
A
SA55
64K/32K
370000 - 37FFFF
1B8000 - 1BFFFF
A
SA56
64K/32K
380000 - 38FFFF
1C0000 - 1C7FFF
A
SA57
64K/32K
390000 - 39FFFF
1C8000 - 1CFFFF
A
SA58
64K/32K
3A0000 - 3AFFFF
1D0000 - 1D7FFF
A
SA59
64K/32K
3B0000 - 3BFFFF
1D8000 - 1DFFFF
A
SA60
64K/32K
3C0000 - 3CFFFF
1E0000 - 1E7FFF
A
SA61
64K/32K
3D0000 - 3DFFFF
1E8000 - 1EFFFF
A
SA62
64K/32K
3E0000 - 3EFFFF
1F0000 - 1F7FFF
A
SA63
8K/4K
3F0000 - 3F1FFF
1F8000 - 1F8FFF
A
SA64
8K/4K
3F2000 - 3F3FFF
1F9000 - 1F9FFF
A
SA65
8K/4K
3F4000 - 3F5FFF
1FA000 - 1FAFFF
A
SA66
8K/4K
3F6000 - 3F7FFF
1FB000 - 1FBFFF
A
SA67
8K/4K
3F8000 - 3F9FFF
1FC000 - 1FCFFF
A
SA68
8K/4K
3FA000 - 3FBFFF
1FD000 - 1FDFFF
A
SA69
8K/4K
3FC000 - 3FDFFF
1FE000 - 1FEFFF
A
SA70
8K/4K
3FE000 - 3FFFFF
1FF000 - 1FFFFF
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
DC and AC Operating Range
Operating Temperature (Case)
AT49BV/LV3218(T)-85
AT49BV/LV3218(T)-90
AT49BV/LV3218(T)-11
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
2.65V to 3.3V/3.0V to 3.6V
2.65V to 3.3V/3.0V to 3.6V
2.65V to 3.3V/3.0V to 3.6V
Ind.
VCC Power Supply
Operating Modes
Mode
CE
OE
WE
RESET
Ai
Read
VIL
VIL
VIH
VIH
Ai
DOUT
Program/Erase(2)
VIL
VIH
V IL
VIH
Ai
DIN
Standby/Program Inhibit
VIH
X(1)
X
VIH
X
High-Z
X
X
VIH
VIH
X
VIL
X
VIH
Output Disable
X
VIH
X
VIH
Reset
X
X
X
VIL
VIL
VIL
VIH
VIH
Program Inhibit
I/O
High-Z
X
High-Z
Product Identification
Hardware
Software(5)
Notes:
1.
2.
3.
4.
5.
VIH
A1 - A20 = VIL, A9 = V H(3), A0 = V IL
Manufacturer Code(4)
A1 - A20 = VIL, A9 = VH(3), A0 = V IH
Device Code(4)
A0 = VIL, A1 - A20 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A20 = VIL
Device Code(4)
X can be VIL or VIH.
Refer to AC programming waveforms on page 19.
VH = 12.0V ± 0.5V.
Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: 00D8H - AT49BV/LV3218; 00D9H - AT49BV/LV3218T.
See details under “Software Product Identification Entry/Exit” on page 20.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to V CC
10
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
ISB3
VCC Standby Current TTL
CE = 2.0V to VCC, VCC = 2.85V
10
µA
VCC Active Read Current
f = 5 MHz; IOUT = 0 mA
25
mA
ICC
(1)
Min
ICC1
VCC Programming Current
45
mA
IPP1
VPP Input Load Current
100
µA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL1
Output Low Voltage
IOL = 2.1 mA
0.45
V
VOL2
Output Low Voltage
IOL = 1.0 mA
0.20
V
VOH1
Output High Voltage
IOH = -400 µA
2.4
V
Output High Voltage
IOH = -100 µA
2.5
V
VOH2
Note:
2.0
V
1. In the erase mode, ICC is 65 mA.
13
2452F–FLASH–10/02
AC Read Characteristics
AT49BV/LV3218(T)-85
Min
Max
AT49BV/LV3218(T)-90
Symbol
Parameter
Min
Max
tACC
Address to Output Delay
85
tCE(1)
CE to Output Delay
85
tOE(2)
OE to Output Delay
0
40
0
40
tDF(3)(4)
CE or OE to Output Float
0
25
0
25
tOH
Output Hold from OE, CE or Address,
whichever occurred first
0
tRO
RESET to Output Delay
AT49BV/LV3218(T)-11
Max
Units
90
110
ns
90
110
ns
0
50
ns
0
30
ns
0
Min
0
100
100
ns
100
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
tRO
RESET
OUTPUT
Note:
HIGH Z
OUTPUT
VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on
tCE or by tACC - tOE after an address change without impact on tACC.
3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
14
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Input Test Waveforms and Measurement Level
tR, tF < 5 ns
Output Test Load
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
15
2452F–FLASH–10/02
AC Byte/Word Load Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Setup Time
0
ns
tAH
Address Hold Time
90
ns
tCS
Chip Select Setup Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
50
ns
tDS
Data Setup Time
50
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
35
ns
AC Byte/Word Load Waveforms
WE Controlled
CE Controlled
16
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Byte/Word Programming Time
Typ
Max
Units
15
20
µs
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
90
ns
tDS
Data Setup Time
50
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
50
ns
tWPH
Write Pulse Width High
35
ns
tWC
Write Cycle Time
85
ns
tSR/W
Latency between Read and Write Operations
50
ns
tRP
Reset Pulse Width
tRH
Reset High Time before Read
tEC
Chip Erase Cycle Time
13
tSEC1
Sector Erase Cycle Time (4K Word Sectors)
60
90
ms
tSEC2
Sector Erase Cycle Time (32K Word Sectors)
200
300
ms
tES
Erase Suspend Time
15
µs
500
ns
50
ns
seconds
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tBP
tWPH
WE
t
tAS
A0 - A20
tAH
tDH
555
555
AAA
tWC
ADDRESS
SR/W
VALID
READ ADDRESS
tDS
tACC
DATA
AA
55
A0
INPUT DATA
OUTPUT
DATA
17
2452F–FLASH–10/02
Sector or Chip Erase Cycle Waveforms
OE (1)
CE
tWP
t EC
tWPH
WE
tSR/W
tAS
A0 - A20
tAH
555
Notes:
18
555
AAA
tWC
DATA
tDH
555
Note 2
AAA
ADDRESS
VALID
tDS
AA
55
80
AA
55
Note 3
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
OUTPUT
VALID
t ACC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under Command Definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Data Polling Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
tOE
tWR
Notes:
Min
OE to Output Delay
Typ
Max
10
ns
10
ns
(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 14.
Units
ns
0
ns
Data Polling Waveforms
20
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
tOE
OE to Output Delay
tOEHP
OE High Pulse
tWR
Notes:
Min
Max
Units
10
ns
10
ns
(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 14.
Typ
ns
50
ns
0
ns
Toggle Bit Waveforms(1)(2)(3)
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
The tOEHP specification must be met by the toggling input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
19
2452F–FLASH–10/02
Software Product Identification
Entry(1)
Sector Lockdown Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 80
TO
ADDRESS 555
LOAD DATA 90
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA 55
TO
ADDRESS AAA
Software Product Identification
Exit(1)(6)
LOAD DATA AA
TO
ADDRESS 555
OR
LOAD DATA 60
TO
SECTOR ADDRESS
LOAD DATA F0
TO
ANY ADDRESS
PAUSE 200 µs(2)
LOAD DATA 55
TO
ADDRESS AAA
EXIT PRODUCT
IDENTIFICATION
MODE(4)
LOAD DATA F0
TO
ADDRESS 555
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), A-1, and A11 - A20
(Don’t Care).
2. Sector Lockdown feature enabled.
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
2.
3.
4.
5.
20
Address Format: A11 - A0 (Hex), A-1, and A11 - A20
(Don’t Care).
A1 - A20 = VIL.
Manufacturer Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
The device does not remain in identification mode if powered down.
The device returns to standard operation mode.
Manufacturer Code: 1FH(x8); 001FH(x16)
Device Code: 00D8H - AT49BV/LV3218
00D9H - AT49BV/LV3218T
Either one of the Product ID Exit commands can be used.
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Status Bit Table
Status Bit
I/O7
Read Address In
I/O6
I/O2
Plane A
Plane B
Plane A
Plane B
Plane A
Plane B
Programming in Plane A
I/O7
DATA
TOGGLE
DATA
1
DATA
Programming in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
1
Erasing in Plane A
0
DATA
TOGGLE
DATA
TOGGLE
DATA
Erasing in Plane B
DATA
0
DATA
TOGGLE
DATA
TOGGLE
Erase Suspended & Read
Erasing Sector
1
1
1
1
TOGGLE
TOGGLE
Erase Suspended & Read
Non-erasing Sector
DATA
DATA
DATA
DATA
DATA
DATA
Erase Suspended &
Program Non-erasing Sector
in Plane A
I/O7
DATA
TOGGLE
DATA
TOGGLE
DATA
Erase Suspended &
Program Non-erasing Sector
in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
TOGGLE
While
21
2452F–FLASH–10/02
AT49BV3218(T) Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
85
25
0.01
AT49BV3218-85CI
AT49BV3218-85TI
48C16
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV3218-90CI
AT49BV3218-90TI
48C16
48T
Industrial
(-40° to 85°C)
110
25
0.01
AT49BV3218-11CI
AT49BV3218-11TI
48C16
48T
Industrial
(-40° to 85°C)
85
25
0.01
AT49BV3218T-85CI
AT49BV3218T-85TI
48C16
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV3218T-90CI
AT49BV3218T-90TI
48C16
48T
Industrial
(-40° to 85°C)
110
25
0.01
AT49BV3218T-11CI
AT49BV3218T-11TI
48C16
48T
Industrial
(-40° to 85°C)
AT49LV3218(T) Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
90
25
0.01
AT49LV3218-90CI
AT49LV3218-90TI
48C16
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49LV3218T-90CI
AT49LV3218T-90TI
48C16
48T
Industrial
(-40° to 85°C)
Package Type
48C16
48-ball, Plastic Chip-Size Ball Grid Array Package (CBGA)
48T
48-lead, Plastic Thin Small Outline Package (TSOP)
22
AT49BV/LV3218(T)
2452F–FLASH–10/02
AT49BV/LV3218(T)
Packaging Information
48C16 – CBGA
E
A1 Ball ID
D
A1
Top View
A
E1
2.00 REF
e
A1 Ball Corner
Side View
2.70 REF
A
COMMON DIMENSIONS
(Unit of Measure = mm)
B
C
MIN
NOM
MAX
E
E
7.90
8.00
8.10
F
E1
–
4.00
–
D
10.90
11.00
11.10
D1
–
5.60
–
A
–
–
1.20
A1
0.30
–
–
SYMBOL
D
D1
G
NOTE
H
e
6
5
4
3
2
1
Øb
e
Bottom View
b
0.80 BSC
–
0.40
–
6/12/01
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48C16, (Formerly 48C7), 48-ball (6 x 8 Array), 0.80 mm Pitch,
8.0 x 11.0 x 1.20 mm Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
48C16
REV.
A
23
2452F–FLASH–10/02
48T – TSOP
PIN 1
0º ~ 8º
c
Pin 1 Identifier
D1 D
L
b
e
L1
A2
E
A
GAGE PLANE
SEATING PLANE
COMMON DIMENSIONS
(Unit of Measure = mm)
A1
MIN
NOM
MAX
A
–
–
1.20
A1
0.05
–
0.15
A2
0.95
1.00
1.05
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
Note 2
E
11.90
12.00
12.10
Note 2
L
0.50
0.60
0.70
SYMBOL
Notes:
1. This package conforms to JEDEC reference MO-142, Variation DD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
L1
0.25 BASIC
b
0.17
0.22
0.27
c
0.10
–
0.21
e
NOTE
0.50 BASIC
10/18/01
R
24
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP)
DRAWING NO.
REV.
48T
B
AT49BV/LV3218(T)
2452F–FLASH–10/02
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