MOTOROLA MRF177 N-channel broadband rf power mosfet Datasheet

Order this document
by MRF177/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
N–Channel Enhancement Mode MOSFET
• Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
2
• Low Thermal Resistance
• Low Crss — 10 pF Typ @ VDS = 28 Volts
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
6
5, 8
1, 4
7
• Excellent Thermal Stability; Suited for Class A
Operation
3
CASE 744A–01, STYLE 2
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
±40
Vdc
Gate–Source Voltage
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
270
1.54
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
0.65
°C/W
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction–to–Case
RθJC
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRF177
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic (1)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
VDS(on)
—
—
1.4
Vdc
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
gfs
1.8
2.2
—
mhos
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
100
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
105
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
10
—
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
GPS
10
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
η
55
60
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
ψ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
No Degradation
in Output Power
Before & After Test
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
MRF177
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
140
50
120
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
f = 150 MHz
225 MHz
100
80
400 MHz
60
40
VDD = 28 V
IDQ = 200 mA
20
0
0
2
4
6
Pin, INPUT POWER (WATTS)
8
f = 225 MHz
40
400 MHz
30
20
10
0
10
VDD = 13.5 V
IDQ = 200 mA
0
2
Figure 1. Output Power versus Input Power
10
100
Pin = 10 W
120
IDQ = 200 mA
f = 400 MHz
100
f = 400 MHz
Pin = CONSTANT
90
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
8
Figure 2. Output Power versus Input Power
140
6.3 W
80
4W
60
40
20
0
4
6
Pin, INPUT POWER (WATTS)
VDS = 28 V
IDQ = 200 mA
80
70
60
50
40
30
20
10
10
12
14
16
18
20
22
24
26
28
0
30
–5
–4
VDD, SUPPLY VOLTAGE (VOLTS)
–3
–2
–1
0
1
2
3
4
5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
420
Figure 4. Output Power versus Gate Voltage
140
100
120
300
100
VGS = 0 V
f = 1 MHz
240
60
180
Coss
120
40
Crss
60
0
80
0
4
8
12
16
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
20
24
Figure 5. Capacitance versus Drain Voltage
MOTOROLA RF DEVICE DATA
0
28
ID , DRAIN CURRENT (AMPS)
360
Crss , C iss , CAPACITANCE (pF)
C oss , CAPACITANCE (pF)
Ciss
20
10
TC = 25° C
4
2
1
0.4
0.2
0.1
1
2
4 6 10
20
40 60 100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. DC Safe Operating Area
MRF177
3
f = 400 MHz
f = 400 MHz
Zo = 10 Ω
ZOL*
200
150
Zin
100
200
150
100
NOTE: Input and Output Impedance values given are measured
gate–to–gate and drain–to–drain respectively.
VDD = 28 V IDQ = 200 mA Pout = 100 W
f
Zin
ZOL*
(MHz)
Ohms
Ohms
100
2.0 – j11.5
3.5 – j6
150
2.05 – j9.45
3.35 – j5.34
200
2.1 – j7.5
3.3 – j4.4
400
2.35 + j0.4
3.2 – j1.38
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
Figure 7. Impedance or Admittance Coordinates
MRF177
4
MOTOROLA RF DEVICE DATA
VDD = 28 V
+
D1
R3
C14 +
R2
+
C16
C15
L1
C17
FERRITE BEAD
+
C18
FERRITE BEAD
FERRITE BEAD
R1
R4
C13
+
C2
RF
INPUT
C1
L2
MRF177
T2
C10
C5
MS1
MS3
MS2
MS4
C7
C4
T1
T3
C3
C8
C6
D.U.T.
C9
C11
T4
RF
OUTPUT
C12
R5
MICROSTRIP DETAIL
0.15″
0.325″
0.325″
0.10″
0.45″
MS1
MS3
0.45″
0.45″
MS2
MS4
0.45″
0.10″
0.15″
0.325″
C1, C12
C2, C3, C5, C6, C10, C11
C4, C9
C7
C8
C13, C14
C15, C18
C16
C17
0.15″
0.10″
0.10″
0.15″
0.325″
1–10 pF JOHANSON OR EQUIVALENT D1
L1
270 pF ATC 100 MIL CHIP CAP
1–20 pF
L2
36 pF CHIP CAP
R1, R4, R5
10 pF CHIP CAP
R2
0.1 µFD @ 50 Vdc
R3
10 µFD @ 50 Vdc
T1
500 pF BUTTON
T2
1000 pF UNCASED MICA
T3
T4
BOARD
1N5347B, 20 Vdc
1–TURN NO. 18, 0.25″, 2–HOLE FERRITE BEAD
8–1/2 TURNS NO. 18, CLOSE WOUND .375″ DIA.
10 kΩ @ 1/2 W RESISTOR
10 kΩ, 10 TURN RESISTOR
2.0 kΩ @ 1/2 W RESISTOR
1–1/2 T, 50 Ω COAX, .034″ DIA. ON DUAL 0.5″ FERRITE CORE
2.0″ 25 Ω COAX, .075″ DIA.
2.1″ 10 Ω COAX, .075″ DIA.
4.0″ 50 Ω COAX, .0865″ DIA.
Dielectric Thickness = 0.060″ 2oz Copper, Cu–Clad, Teflon Fiberglass, εr = 2.55
Figure 8. Test Circuit Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF177
5
PACKAGE DIMENSIONS
U
0.76 (0.030)
M
A
M
4 PL
M
Q
B
M
1
2
3
K
4
R
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
U
V
–B–
5
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
6
7
K
8
4 PL
F
V
4 PL
2 PL
L
G
–A–
J
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
N
C
H
MILLIMETERS
MIN
MAX
22.60
23.11
9.52
10.03
6.65
7.16
1.60
1.95
2.94
3.40
2.87
3.22
16.51 BSC
4.01
4.36
0.07
0.15
4.34
4.90
12.45
12.95
45_NOM
1.051
11.02
3.04
3.35
9.90
10.41
1.02
1.27
0.64
0.89
INCHES
MIN
MAX
0.890
0.910
0.375
0.395
0.262
0.282
0.063
0.077
0.116
0.134
0.113
0.127
0.650 BSC
0.158
0.172
0.003
0.006
0.171
0.193
0.490
0.510
45_NOM
0.414
0.434
0.120
0.132
0.390
0.410
0.040
0.050
0.025
0.035
SOURCE (COMMON)
DRAIN
DRAIN
SOURCE (COMMON)
SOURCE (COMMON)
GATE
GATE
SOURCE (COMMON)
E
–T–
SEATING
PLANE
CASE 744A–01
ISSUE C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MRF177
6
◊
MRF177/D
MOTOROLA RF DEVICE
DATA