TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4 −0.12 VP0610L −60 10 @ VGS = −10 V −1 to −3.5 −0.18 VP0610T −60 10 @ VGS = −10 V −1 to −3.5 −0.12 BS250 −45 14 @ VGS = −10 V −1 to −3.5 −0.18 FEATURES D D D D D BENEFITS High-Side Switching Low On-Resistance: 8 W Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF Device Marking Front View TO-226AA (TO-92) S 1 G 2 D 3 TP0610L VP0610L Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-92-18RM (TO-18 Lead Form) TP0610L “S” TP 0610L xxll D 1 G 2 S 3 TO-236 (SOT-23) Device Marking Front View BS250 VP0610L “S” VP 0610L xxll Top View APPLICATIONS G “S” BS 250 xxll Top View 1 Marking Code: 3 S 2 “S” = Siliconix Logo xxll = Date Code D TP0610T: TOwll VP0610T: VOwll w = Week Code lL = Lot Traceability Top View TP0610T VP0610T BS250 “S” = Siliconix Logo xxll = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Drain-Source Voltage VDS −60 −60 −60 −60 −45 Gate-Source Voltage VGS "30 "30 "30 "30 "25 −0.18 −0.12 −0.18 −0.12 −0.18 −0.11 −0.07 −0.11 −0.07 −0.8 −0.4 −0.8 −0.4 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg 0.8 0.36 0.8 0.36 0.32 0.14 0.32 0.14 156 350 156 350 −55 to 150 Unit V A 0.83 150 W _C/W _C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70209 S-41260—Rev. H, 05-Jul-04 www.vishay.com 1 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TP0610L/T Parameter Symbol Test Conditions Typa Min VGS = 0 V, ID = −10 mA −70 −60 Max VP0610L/T Min Max BS250 Min Max Unit Static Drain Source Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Bodyy Leakage g V(BR)DSS VGS(th) IGSS −60 −45 VGS = 0 V, ID = −100 mA VDS = VGS, ID = −1 mA −1.9 −1 −2.4 VDS = 0 V, VGS = "20 V "10 VDS = 0 V, VGS = "20 V, TJ = 125_C "50 −1 −3.5 IDSS nA "20 VDS = −48 V, VGS = 0 V −1 −1 VDS = −48 V, VGS = 0 V, TJ = 125_C −200 −200 VDS = −25 V, VGS = 0 V ID(on) VDS = −10 10 V, V VGS = −10 10 V −180 L Suffix Forward Transconductanceb Diode Forward Voltage rDS(on) DS( ) gfs f VSD −50 −750 −600 T Suffix VGS = −4.5 V, ID = −25 mA Drain-Source On-Resistanceb mA m −0.5 VDS = −10 V, VGS = −4.5 V On-State O S Drain Currentb V −3.5 "10 VDS = 0 V, VGS = "15 V Zero G Gate Voltage Drain Current −1 mA −220 11 25 VGS = −10 V, ID = −0.5 A L Suffix 8 10 10 VGS = −10 V, ID = −0.5 A, TJ = 125_C L Suffix 15 20 20 VGS = −10 V, ID = −0.2 A T Suffix 6.5 10 10 VDS = −10 V, ID = −0.5 A L Suffix 20 80 VDS = −10 V, ID = −0.1 A T Suffix 90 60 IS = −0.5 A, VGS = 0 V W 14 mS 70 −1.1 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = −25 V, VGS = 0 V f = 1 MHz 15 60 60 10 25 25 3 5 5 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = −25 25 V, RL = 133 W ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 8 10 8 10 ns VPDS06 Document Number: 70209 S-41260—Rev. H, 05-Jul-04 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1200 1.0 VGS = 10 V TJ = −55_C 7V 8V I D − Drain Current (mA) I D − Drain Current (A) 0.8 6V 0.6 0.4 5V 0.2 900 25_C 125_C 600 300 4V 0.0 0 0 1 2 3 4 5 0 2 VDS − Drain-to-Source Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 40 20 16 32 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) VGS = 0 V VGS = 4.5 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID − Drain Current (mA) ID = 500 mA 6 3 0.3 0.6 0.9 1.2 Qg − Total Gate Charge (nC) Document Number: 70209 S-41260—Rev. H, 05-Jul-04 25 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA VDS = 48 V 9 0 0.0 20 1.5 VDS = 30 V rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.8 12 15 VDS − Drain-to-Source Voltage (V) Gate Charge 15 10 1.5 1.8 1.2 VGS = 4.5 V @ 25 mA 0.9 0.6 0.3 0.0 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 10 1000 r DS(on) − On-Resistance ( W ) I S − Source Current (A) VGS = 0 V 100 TJ = 125_C 10 TJ = 25_C TJ = −55_C 8 ID = 500 mA 6 4 ID = 200 mA 2 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 VSD − Source-to-Drain Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.5 3 0.4 2.5 ID = 250 mA 0.3 2 0.2 Power (W) V GS(th) Variance (V) 2 0.1 −0.0 1.5 1 TA = 25_C −0.1 0.5 −0.2 −0.3 −50 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ − Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 350_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 70209 S-41260—Rev. H, 05-Jul-04