MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81731FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) VB1 HO1 IN1 VS1 NC NC NC NC IN2 VB2 NC HO2 GND VS2 9 NC 8 APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. 1 VCC ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................ ±3A (typ) ¡UNDERVOLTAGE LOCKOUT ¡BUILT-IN INPUT NOISE FILTER ¡SOP-16 PACKAGE 16 FEATURES NC:NO CONNECTION Outline:16P2N BLOCK DIAGRAM VCC 1 VREG HV LEVEL SHIFT UV DETECT FILTER IN1 3 FILTER GND 6 FILTER S UV DETECT FILTER HO1 14 VS1 11 VB2 10 HO2 9 VS2 Ponr R Q INTER LOCK IN2 15 R PULSE GEN HV LEVEL SHIFT VREG/VCC LEVEL SHIFT VB1 R Q INTER LOCK VREG/VCC LEVEL SHIFT 16 Ponr R S PULSE GEN 8 Aug. 2009 1 MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB Parameter High Side Floating Supply Absolute Voltage Test conditions VB1 or VB2 VS High Side Floating Supply Offset Voltage VS1 or VS2 VBS1 = VB1-VS1 or VBS High Side Floating Supply Voltage VOUT Output Voltage VCC Low Side Fixed Supply Voltage VIN Logic Input Voltage IN1 or IN2 PD Package Power Dissipation Kq Linear Derating Factor Rth(j-c) Junction-Case Thermal Resistance Tj VBS2 = VB2-VS2 HO1 or HO2 Ratings –0.5 ~ 624 Unit V VB–24 ~ VB+0.5 V –0.5 ~ 24 V VS–0.5 ~ VB+0.5 V –0.5 ~ 24 V –0.5 ~ VCC+0.5 V Ta = 25°C, On Board 1.0 W Ta > 25°C, On Board 8.0 mW/°C 50 °C/W Junction Temperature –20 ~ 150* °C Topr Operation Temperature –20 ~ 125 °C Tstg Storage Temperature –40 ~ 150 °C TL Solder heat-proof (reflow) 255:10s,max 260 °C Pb Free * Please adjust the VS potentian to 500V or less when the junction temperature (Tj) exceeds 125°C. RECOMMENDED OPERATING CONDITIONS Limits Symbol VB Parameter Test conditions VB1 or VB2 High Side Floating Supply Absolute Voltage VS High Side Floating Supply Offset Voltage VBS High Side Floating Supply Voltage VOUT High Side Output Voltage VCC Low Side Fixed Supply Voltage VIN Logic Input Voltage VS1 (VB1>10V) or VS2 (VB2>10V) VBS1 = VB1-VS1 or VBS2 = VB2-VS2 HO1 or HO2 IN1 or IN2 Unit Min. Typ. Max. VS+10 — VS+20 V –5 — 500 V 10 — 20 V VS — VB V 10 — 20 V 0 — 7 V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Temparature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol Parameter Test conditions Limits Min. Typ.* Max. Unit µA IFS1 Floating Supply Leakage Current1 VB1 = VS1 = 600V — — 1.0 IFS2 Floating Supply Leakage Current2 VB2 = VS2 = 600V — — 1.0 µA IBS1 VBS1 Standby Current IN1 = 0V — 0.2 0.5 mA IBS2 VBS2 Standby Current IN2 = 0V — 0.2 0.5 mA ICC VCC Standby Current IN1 = IN2 = 0V — 0.3 0.6 mA VOH High Level Output Voltage IO = 0A, HO1, HO2 13.8 14.4 — V VOL Low Level Output Voltage IO = 0A, HO1, HO2 — — 0.1 V VIH High Level Input Threshold Voltage IN1, IN2 4.0 — — V VIL Low Level Input Threshold Voltage IN1, IN2 — — 0.8 V IIH High Level Input Bias Current VIN = 5V, IN1, IN2 — 17 40 µA IIL Low Level Input Bias Current VIN = 0V, IN1, IN2 — — 2 µA VBSuvr VBS Supply UV Reset Voltage VBS1, VBS2 8.0 8.9 9.8 V VBSuvh VBS Supply UV Hysteresis Voltage VBS1, VBS2 0.3 0.7 — V tVBSuv VBS Supply UV Filter Time VBS1, VBS2 — 7.5 — µs VPonr Power-On Reset Voltage VBS1, VBS2 — — 6.0 V tPonr(FIL) Power-On Reset Filter TIme VBS1, VBS2 300 — — ns IOH Output High Level Short Circuit Pulsed Current VO = 0V, VIN = 5V, PWD <10µs, HO1, HO2 2.0 3.0 — A IOL Output Low Level Short Circuit Pulsed Current VO = 15V, VIN = 0V, PWD < 10µs, HO1, HO2 2.0 3.0 — A ROH Output High Level On Resistance IO = -200mA, ROH = (VOH-VO) /IO HO1, HO2 — 10 20 Ω ROL Output Low Level On Resistance IO = 200mA, ROL = VO / IO HO1, HO2 — 2.5 3.0 Ω tdLH Turn-On Propagation Delay CL = 1000pF between HO1-VS1 or HO2-VS2 — 200 280 ns tdHL Turn-Off Propagation Delay CL = 1000pF between HO1-VS1 or HO2-VS2 — 170 260 ns tr Turn-On Rise Time CL = 1000pF between HO1-VS1 or HO2-VS2 — 25 45 ns tf Turn-Off Fall Time CL = 1000pF between HO1-VS1 or HO2-VS2 — 20 35 ns ∆tdLH Delay Matching, High Side and Low Side Turn-On |tdLH (HO1) -tdLH (HO2) — — 30 ns ∆tdHL Delay Matching, High Side and Low Side Turn-Off |tdHL (HO1) -tdHL (HO2) — — 30 ns CONVEX PULSE : IN1, IN2 — 90 — ns CONCAVE PULSE : IN1, IN2 — 90 — ns IN(FIL) Input Filter Time * Typ. is not specified. Aug. 2009 3 MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER TIMING REQUIREMENT IN1 or IN2 50% 50% tr tdLH tdHL 90% HO1 or HO2 tf 90% 10% 10% FUNCTION TABLE IN1 IN2 H→L H→L H H H→L L→H H L→H H→L H L→H L→H X VBS1 UV VBS2 UV HO1 HO2 L L HO1=HO2=Low H L H HO2=High H H L HO1=High H H H H HO1=HO2=High H→L L H L L HO1=Low, VBS1 UV tripped X L→H L H L H HO2=High, VBS1 UV tripped H→L X H L L L HO2=Low, VBS2 UV tripped L→H X H L H L HO1=High, VBS2 UV tripped Behavioral state Note1 : “L” state of VBS1 UV, VBS2 UV means that UV trip voltage. When input signal(IN1 and IN2) is “H” at the same time, then output signal (Both HO1 and HO2) is “H”. 2 : X : L→H or H→L. 3 : Output signal (HO1, HO2) is triggered by the edge of input signal. IN1(IN2) HO1(HO2) Aug. 2009 4 MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER TIMING DIAGRAM VCC VBS UVTrip VBS1 (VBS2) VBS UVReset VBSuvr VBSuvt VPonrReset VPonr IN1 (IN2) tPonr (FIL) tVBSuv HO1 (HO2) 1. Input/Output Timing HIGH ACTIVE (When input signal is “H”, then output signal is “H”.) 2. VBS Supply Under Voltage Lockout If VBS supply voltage drops below UV trip voltage (VBSuvt) for VBS supply UV filter time, output signal is shut down. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. Note: If the VBS drops below VPON, the filter time will become tPOR (FIL) instead of tVBSuv. 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS1(VBS2) secondly. When shutting off supply voltage, please shut off VBS1(VBS2) firstly and shut off VCC secondly. When applying VCC and VBS1(VBS2), power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Note: If VCC is below its recommended value: 10V, output may not response input signals. Note: Please take enough evaluation in the case of power supply shut down and power supply applying after its shut-down. Aug. 2009 5 MITSUBISHI SEMICONDUCTORS <HVIC> M81731FP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE 16P2N-A Plastic 16pin 300mil SOP EIAJ Package Code SOP16-P-300-1.27 JEDEC Code Weight(g) 0.2 Lead Material Cu Alloy e b2 9 E Recommended Mount Pad Symbol 1 F 8 A D G A2 b e x A1 M y L L1 HE e1 I2 16 A A1 A2 b c D E e HE L L1 z Z1 x y c z Z1 Detail G Detail F b2 e1 I2 Dimension in Millimeters Min Nom Max 2.1 0.2 0 0.1 1.8 0.35 0.4 0.5 0.2 0.25 0.18 10.1 10.2 10.0 5.3 5.4 5.2 1.27 7.8 8.1 7.5 0.6 0.8 0.4 1.25 0.605 0.755 0.25 0.1 0° 8° 0.76 7.62 1.27 Aug. 2009 6